초록 ▼

A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an

A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon. A high performance TFT can be realized. The metal silicide layer achieves favorable contact with the source and the drain, and, since it has a lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating a laser light; forming a silicon oxide film in contact with the crystalline semiconductor film by usin

What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating a laser light; forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the crystalline semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the crystalline semiconductor film by irradiating a laser light. 2. A method according to claim 1, wherein the method further comprises a step of removing a portion of the metal layer which did not react with the portion of the crystalline semiconductor film. 3. A method according to claim 1, wherein the organic silane is TEOS. 4. A method according to claim 1, wherein the metal silicide layer comprises a material selected from the group consisting of TiSi, TiSi2, MoSi2, WSi2, W(SiAl)2, Ti 7Si12Al5 and Pd4SiAl3. 5. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating a laser light; forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the crystalline semiconductor film; and forming a metal suicide layer by reacting the metal layer with the portion of the crystalline semiconductor film by irradiating an infrared light. 6. A method according to claim 5, wherein the method further comprises a step of removing a portion of the metal layer which did not react with the portion of the crystalline semiconductor film. 7. A method according to claim 5, wherein the organic silane is TEOS. 8. A method according to claim 5, wherein the metal silicide layer comprises a material selected from the group consisting of TiSi, TiSi2, MoSi2, WSi2, W(SiAl)2, Ti 7Si12Al5 and Pd4SiAl3. 9. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating a laser light; forming a silicon oxide film in contact with the crystalline semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the crystalline semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the crystalline semiconductor film by heating. 10. A method according to claim 9, wherein the method further comprises a step of removing a portion of the metal layer which did not react with the portion of the crystalline semiconductor film. 11. A method according to claim 9, wherein the organic silane is TEOS. 12. A method according to claim 9, wherein the metal silicide layer comprises a material selected from the group consisting of TiSi, TiSi2, MoSi2, WSi2, W(SiAl)2, Ti 7Si12Al5 and Pd4SiAl3. 13. A method according to claim 1, wherein the metal layer comprises a material selected from the group consisting of Mo, W, Pt, Cr, Ti and Co. 14. A method according to claim 5, wherein the metal layer comprises a material selected from the group consisting of Mo, W, Pt, Cr, Ti and Co. 15. A method according to claim 9, wherein the metal layer comprises a material selected from the group consisting of Mo, W, Pt, Cr, Ti and Co. 16. A method for manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film in contact with a semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the semiconductor film by irradiating a laser light. 17. A method according to claim 16, wherein the method further comprises a step of removing a portion of the metal layer which did not react with the portion of the semiconductor film. 18. A method according to claim 16, wherein the organic silane is TEOS. 19. A method according to claim 16, wherein the metal layer comprises a material selected from the group consisting of Mo, W, Pt, Cr, Ti and Co. 20. A method according to claim 16, wherein the metal suicide layer comprises a material selected from the group consisting of TiSi, TiSi2, MoSi2, WSi2, W(SiAl)2, Ti 7Si12Al5 and Pd4SiAl3. 21. A method for manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film in contact with a semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the semiconductor film by irradiating an infrared light. 22. A method according to claim 21, wherein the method further comprises a step of removing a portion of the metal layer which did not react with the portion of the semiconductor film. 23. A method according to claim 21, wherein the organic silane is TEOS. 24. A method according to claim 21, wherein the metal layer comprises a material selected from the group consisting of Mo, W, Pt, Cr, Ti and Co. 25. A method according to claim 21, wherein the metal silicide layer comprises a material selected from the group consisting of TiSi, TiSi2, MoSi2, WSi2, W(SiAl)2, Ti7Si12Al5 and Pd4SiAl3. 26. A method for manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film in contact with a semiconductor film by using organic silane; forming a gate electrode in contact with the gate insulating film; forming a metal layer in contact with a portion of the semiconductor film; and forming a metal silicide layer by reacting the metal layer with the portion of the semiconductor film by heating. 27. A method according to claim 26, wherein the method further comprises a step of removing a portion of the metal layer which did not react with the portion of the semiconductor film. 28. A method according to claim 26, wherein the organic silane is TEOS. 29. A method according to claim 26, wherein the metal layer comprises a material selected from the group consisting of Mo, W, Pt, Cr, Ti and Co. 30. A method according to claim 26, wherein the metal suicide layer comprises a material selected from the group consisting of TiSi, TiSi2, MoSi2, WSi2, W(SiAl)2, Ti 7Si12Al5 and Pd4SiAl3.