Semiconductor die packages with recessed interconnecting structures and methods for assembling the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/44
H01L-021/02
출원번호
US-0150516
(2002-05-17)
우선권정보
SG-200201290-4(2002-03-04)
발명자
/ 주소
Lee,Teck Kheng
Tan,Cher Khng Victor
출원인 / 주소
Micron Technology, Inc.
대리인 / 주소
TraskBritt
인용정보
피인용 횟수 :
26인용 특허 :
162
초록▼
Apparatus and methods relating to semiconductor assemblies. A semiconductor assembly includes an interposer which may be constructed from a flexible material, such as a polyimide tape. A pattern of conductive traces disposed on a first surface of the interposer is in electrical communication with a
Apparatus and methods relating to semiconductor assemblies. A semiconductor assembly includes an interposer which may be constructed from a flexible material, such as a polyimide tape. A pattern of conductive traces disposed on a first surface of the interposer is in electrical communication with a semiconductor die attached to the first surface. Interconnect recesses accessible on the opposite second surface expose one or more conductive traces. A conductive element, such as a solder ball, disposed substantially within the interconnect recess allows the assembly to be mounted on a substrate or a similar assembly. By substantially containing the conductive element within the interconnect recess, the height of the completed assembly is reduced. Assemblies may be stacked to form multidie assemblies. Interconnect structures, such as connection pads, or enlarged traces upon the first surface are employed to connect stacked assemblies.
대표청구항▼
What is claimed is: 1. A method of forming a semiconductor assembly comprising: forming an interposer body having first and second surfaces from a nonrigid substrate; disposing a plurality of electrically conductive traces on the first surface of the interposer body; forming a plurality of connecti
What is claimed is: 1. A method of forming a semiconductor assembly comprising: forming an interposer body having first and second surfaces from a nonrigid substrate; disposing a plurality of electrically conductive traces on the first surface of the interposer body; forming a plurality of connection recesses from the second surface passing through the interposer body to respectively expose a portion of one of the plurality of electrically conductive traces; disposing a preformed solder ball in each of the plurality of connection recesses; heating the solder balls disposed in the recesses of the plurality to reflow and protrude slightly beyond a mouth of each connection recess; and attaching a semiconductor die to the first surface of the interposer body and placing the semiconductor die in electrical communication with at least one of the plurality of electrically conductive traces . 2. The method of claim 1, further comprising disposing an encapsulant over the semiconductor die. 3. The method of claim 1, wherein attaching the semiconductor die to the first surface comprises attaching the semiconductor die to the first surface with an adhesive and placing the semiconductor die in electrical communication with the at least one of the plurality of electrically conductive traces comprises forming a wirebond connection between the semiconductor die and the at least one of the plurality of electrically conductive traces. 4. The method of claim 1, wherein attaching the semiconductor die to the first surface and placing the semiconductor die in electrical communication with the at least one of the plurality of electrically conductive traces comprises attaching the semiconductor die in flip chip fashion to the first surface with an electrically conductive material to make an electrical and mechanical connection between the semiconductor die and the at least one of the plurality of electrically conductive traces. 5. The method of claim 4, wherein attaching the semiconductor die to the first surface and placing the semiconductor die in electrical communication with the at least one of the plurality of electrically conductive traces comprises disposing the semiconductor die bearing an array of solder balls on the first surface and reflowing the solder balls to electrically and mechanically connect the semiconductor die to the at least one of the plurality of electrically conductive traces. 6. The method of claim 1, wherein forming an interposer body from a nonrigid substrate comprises forming the interposer body from a polymide flex tape. 7. The method of claim 1, wherein disposing a plurality of electrically conductive traces comprises forming metallic traces on the first surface. 8. The method of claim 7, wherein forming metallic traces comprises etching a metallic layer disposed on the first surface. 9. A method of forming a semiconductor assembly comprising: forming an interposer body having a first surface and a second surface from a nonrigid substrate; disposing a plurality of electrically conductive traces on the first surface; disposing a plurality of electrically conductive interconnect structures on the first surface at locations laterally offset from locations of connection recesses; forming a plurality of connection recesses from the second surface passing through the interposer body to respectively expose a portion of one of the plurality of electrically conductive traces; disposing an electrically conductive material in the form of a solder within each of the plurality of connection recesses in a volume sufficient to reside substantially within each of the plurality of connection recesses; heating the solder within each of the plurality of connection recesses to reflow and protrude slightly beyond a mouth of each recess; and attaching a semiconductor die to the first surface of the interposer body and placing the semiconductor die in electrical communication with at least one of the plurality of electrically conductive traces. 10. The method of claim 9, further comprising disposing an encapsulant over the semiconductor die. 11. The method of claim 9, wherein attaching the semiconductor die to the interposer body comprises attaching the semiconductor die to the first surface with an adhesive and placing the semiconductor die in electrical communication with at least one of the plurality of conductive traces comprises forming a wirebond connection between the semiconductor die and the at least one of the plurality of electrically conductive traces. 12. The method of claim 9, wherein attaching the semiconductor die to the first surface and placing the semiconductor die in electrical communication with the at least one of the plurality of electrically conductive traces comprises attaching the semiconductor die in flip chip fashion on the first surface with an electrically conductive material to make an electrical and mechanical connection between the semiconductor die and the at least one of the plurality of electrically conductive traces. 13. The method of claim 12, wherein attaching the semiconductor die to the first surface and placing the semiconductor die in electrical communication with the at least one of the plurality of electrically conductive traces comprises disposing the semiconductor die bearing an array of solder balls on the first surface and reflowing the solder balls to electrically and mechanically connect the semiconductor die to the at least one of the plurality of electrically conductive traces. 14. The method of claim 9, wherein disposing a plurality of electrically conductive interconnect structures comprises disposing a plurality of electrical connection pads on the first surface. 15. The method of claim 9, wherein disposing a plurality of electrically conductive interconnect structures comprises disposing a plurality of electrically conductive pads on the first surface. 16. The method of claim 9, wherein disposing a solder within each of the plurality of connection recesses comprises flooding the second surface with a plurality of solder balls and then removing solder balls not residing substantially within one of the plurality of connection recesses. 17. The method of claim 9, wherein disposing a solder within each of the plurality of connection recesses comprises flooding the second surface with a plurality of solder balls and then removing solder balls not residing substantially within one of the plurality of connection recesses. 18. The method of claim 17, further comprising disposing a solder mask over the second surface, prior to disposing the solder paste. 19. The method of claim 9, wherein providing a nonrigid substrate to form an interposer body comprises providing a polyimide flex tape. 20. The method of claim 9, further comprising forming a recess in the second surface sized and configured to receive at least a portion of a semiconductor die therein. 21. The method of claim 9, wherein disposing a plurality of electrically conductive traces comprises forming metallic traces on the first surface. 22. The method of claim 21, wherein forming metallic traces comprises etching a metallic layer disposed on the first surface. 23. A method of forming a stacked semiconductor assembly comprising: forming a first semiconductor assembly by: forming a first interposer body having first and second surfaces from a nonrigid substrate; forming a die recess in the second surface sized and configured to receive at least a portion of a semiconductor die therein; disposing first electrically conductive traces on the first surface; forming at least a first connection recess from the second surface passing through the first interposer body to expose a portion of at least one of the first electrically conductive traces disposed on the first surface; attaching a first semiconductor die to the first surface in electrical communication with at least one of the first electrically conductive traces disposed on the first surface; and disposing an electrically conductive material substantially within the at least the first connection recess and in electrically conductive contact with the exposed portion of the at least one of the first electrically conductive traces; forming a second semiconductor assembly by: forming a second interposer body having third and fourth surfaces from a nonrigid substrate; disposing second electrically conductive traces on the third surface; disposing at least a first stacking electrical interconnection structure on the third surface; forming at least a second connection recess from the fourth surface passing through the second interposer body to expose a portion of at least one of the second electrically conductive traces disposed on the third surface; attaching a second semiconductor die to the third surface in electrical communication with at least one of the second electrically conductive traces disposed on the third surface; disposing an electrically conductive material substantially within the at least the second connection recess and in electrically conductive contact with the exposed portion of the at least one of the second electrically conductive traces; and superimposing the first semiconductor assembly on the second semiconductor assembly, such that at least a portion of the second semiconductor die is received within the die recess, the at least the first connection recess is aligned with the at least the first stacking electrical interconnection structure, and the electrically conductive material disposed within the at least the first connection recess makes electrically conductive contact to the at least the first stacking electrical interconnection structure. 24. The method of claim 23, wherein forming a die recess in the second surface sized and configured to receive at least a portion of a semiconductor die therein is effected concurrently with forming the at least a first connection recess. 25. The method of claim 23, wherein receiving the at least a portion of the second semiconductor die within the die recess aligns the at least the first connection recess with the at least the first stacking electrical interconnection structure. 26. The method of claim 23, wherein disposing the electrically conductive material substantially within the at least the first connection recess comprises disposing the electrically conductive material in electrically conductive contact with the at least one of the first electrically conductive traces in electrical communication with the first semiconductor die. 27. The method of claim 23, wherein disposing the at least the first stacking electrical interconnection structure comprises disposing an electrical connection pad. 28. The method of claim 27, wherein disposing the at least the first stacking electrical interconnection structure comprises disposing an electrically conductive trace on the first surface. 29. The method of claim 23, wherein disposing an electrically conductive material substantially within the at least the first connection recess comprises disposing solder within the at least the first connection recess. 30. The method of claim 29, wherein disposing solder within the at least the first connection recess comprises flooding the second surface with a number of solder balls and then removing solder balls not disposed substantially within the at least the first connection recess. 31. The method of claim 29, wherein disposing solder within the at least the first connection recess comprises disposing a solder paste within the at least the first connection recess and then reflowing the solder paste to form a solder ball. 32. The method of claim 31, further comprising disposing a solder mask over the second surface prior to disposing the solder paste. 33. The method of claim 23, wherein forming the first interposer body from a nonrigid substrate comprises using a polyimide flex tape. 34. The method of claim 23, wherein forming the second interposer body from a nonrigid substrate comprises using a polyimide flex tape. 35. The method of claim 23, wherein disposing first electrically conductive traces comprises forming first metallic traces on the first surface. 36. The method of claim 35, wherein forming first metallic traces comprises etching a first metallic layer disposed on the first surface. 37. The method of claim 36, wherein disposing second electrically conductive traces comprises forming second metallic traces on the third surface. 38. The method of claim 37, wherein forming second metallic traces comprises etching a second metallic layer disposed on the third surface. 39. A method of forming a stacked semiconductor assembly comprising: forming a first semiconductor assembly by: forming a first interposer body having first and second surfaces from a first nonrigid substrates; disposing at least one first electrically conductive trace on the second surface; forming at least a first connection recess from the first surface passing through the first interposer body to expose a portion of the at least one first electrically conductive trace disposed on the second surface; forming a die recess in the first surface sized and configured to receive at least a portion of a semiconductor die therein; attaching a first semiconductor die to the second surface; disposing an electrically conductive material substantially within the at least the first connection recess and in electrically conductive contact with the exposed portion of the at least one first electrically conductive trace; forming a second semiconductor assembly by: forming a second interposer body having third and fourth surfaces from a second nonrigid substrate; disposing at least one second electrically conductive trace on the fourth surface; disposing at least a first stacking electrical interconnection structure on the fourth surface, forming at least a second connection recess from the third surface passing through the second interposer body to expose the at least one second electrically conductive trace disposed on the fourth surface; attaching the second semiconductor die to the fourth surface; disposing an electrically conductive material substantially within the at least the second connection recess and in electrically conductive contact with the exposed portion of the at least one second electrically conductive trace; and superimposing the first semiconductor assembly on the second semiconductor assembly, with at least a portion of the second semiconductor die received within the die recess, the at least the first connection recess is aligned with the stacking at least the first electrical interconnection structure, and the electrically conductive material disposed within the at least the first connection recess makes electrically conductive contact to the at least the first stacking electrical interconnection structure. 40. The method of claim 39, wherein forming a die recess in the first surface is effected concurrently with forming the at least a first connection recess. 41. The method of claim 39, wherein receiving the at least a portion of the second semiconductor die within the die recess aligns the at least the first connection recess with the at least the first stacking electrical interconnection structure. 42. The method of claim 39, wherein disposing the electrically conductive material in the at least the first connection recess comprises disposing the electrically conductive material in electrically conductive contact with the at least one first electrically conductive trace. 43. The method of claim 39, wherein disposing the at least the first stacking electrical interconnection structure comprises disposing an electrical connection pad. 44. The method of claim 39, wherein disposing the at least the first stacking electrical interconnection structure comprises disposing an electrically conductive trace on the third surface. 45. The method of claim 39, wherein disposing an electrically conductive material substantially within the at least the first connection recess comprises disposing solder within the at least the first connection recess. 46. The method of claim 45, wherein disposing solder within the at least the first connection recess comprises disposing a solder paste within the at least the first connection recess and then reflowing the solder paste to form a solder ball. 47. The method of claim 46, further comprising disposing a solder mask over the first surface prior to disposing the solder paste. 48. The method of claim 39, wherein forming the first interposer body from a first nonrigid substrate comprises using a polyimide flex tape. 49. The method of claim 39, wherein forming the second interposer body from a second nonrigid substrate comprises using a polyimide flex tape. 50. The method of claim 39, wherein disposing at least a first electrically conductive trace comprises forming first metallic traces on the second surface. 51. The method of claim 50, wherein forming first metallic traces comprises etching a first metallic layer disposed on the second surface. 52. The method of claim 50, wherein disposing at least one second electrically conductive trace comprises forming second metallic traces on the fourth surface. 53. The method of claim 52, wherein forming second metallic traces comprises etching a second metallic layer disposed on the fourth surface.
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