초록 ▼

An optical imprinting apparatus, and a method for producing a two-dimensional pattern, have line widths less than the wavelength of an exposure light. The evanescent (proximity) field effect is adopted to realize the apparatus and method. An optical imprinting apparatus comprises a container in whic

An optical imprinting apparatus, and a method for producing a two-dimensional pattern, have line widths less than the wavelength of an exposure light. The evanescent (proximity) field effect is adopted to realize the apparatus and method. An optical imprinting apparatus comprises a container in which light is enclosed, an exposure-mask having a proximity field exposure pattern firmly fixed to a section of the container for exposing the exposure pattern on a photo-sensitive material through an evanescent field by the light enclosed therein; and a light source for supplying the light in the container.

대표청구항 ▼

What is claimed is: 1. A method for evanescent-field-assisted imprinting, comprising: placing a proximity field exposure pattern on a section of a container in which light is enclosed; aligning a fabrication object having a photo-sensitive film thereon in proximity of said proximity field exposure

What is claimed is: 1. A method for evanescent-field-assisted imprinting, comprising: placing a proximity field exposure pattern on a section of a container in which light is enclosed; aligning a fabrication object having a photo-sensitive film thereon in proximity of said proximity field exposure pattern; injecting a light from said container into said proximity field exposure pattern so as to imprint said proximity field exposure pattern on said photo-sensitive film by means of an evanescent field formed between said proximity field exposure pattern and said photo-sensitive film, thereby forming exposed regions and unexposed regions on said photo-sensitive film removing said unexposed regions from said photo-sensitive film; and irradiating said photo-sensitive film with a fast atomic beam. 2. A method for imprinting micro-patterns on a substrate base, comprising: coating not less than two coating layers, including an upper layer of a photo-sensitive film having a thickness dimension of less than a wavelength of exposure light; placing an exposure-mask having proximity patterns in contact with or in proximity of said photo-sensitive film at a sub-wavelength distance so as to generate an evanescent field and expose said proximity patterns on said photo-sensitive film; developing exposed proximity patterns by photo-processing to produce a first etch-mask; fabricating a lower coating layer on said substrate base using said first etch-mask to produce a second etch-mask comprised by said lower layer; and fabricating proximity field exposure patterns on said substrate base using said second etch-mask, wherein fabrication of said substrate base or said lower layer is performed using a fast atomic beam. 3. A method according to claim 2, wherein a thickness of said first coating layer is essentially the same as a minimum dimension of said proximity field exposure pattern. 4. A method for imprinting micro-patterns on a substrate base comprising: applying a first coating of a photo-sensitive material on said substrate base to a thickness less than a wavelength of an exposure light; placing an exposure-mask having a proximity field exposure pattern in contact with or in proximity of said proximity field exposure pattern at a sub-wavelength distance; exposing said coating through said exposure-mask using said exposure light through an evanescent field and developing by photo-processing to produce first imprinted patterns on said first coating; forming a second coating on said first imprinted pattern of said photo-sensitive material; dissolving said first coating to lift off said first imprinted patterns, thereby leaving second imprinted patterns formed by said second coating; and fabricating said substrate base using said second imprinted patterns as an etch-mask to produce micro-patterns on said substrate base, wherein fabrication of said substrate base or said first coating is performed using a fast atomic beam. 5. A method according to claim 4, wherein a thickness of said first coating is essentially the same as a minimum dimension of said proximity field exposure pattern.