Method and system for controlling the presence of fluorine in refractory metal layers
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/44
H01L-021/02
출원번호
US-0338565
(2006-01-24)
발명자
/ 주소
Sinha,Ashok
Xi,Ming
Kori,Moris
Mak,Alfred W.
Byun,Jeong Soo
Lei,Lawrence Chung Lai
Chung,Hua
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson &
인용정보
피인용 횟수 :
23인용 특허 :
213
초록▼
A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts th
A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.
대표청구항▼
What is claimed is: 1. A method for forming a tungsten layer on a substrate surface, comprising: (a) positioning a substrate within a deposition chamber; (b) heating the substrate to a temperature within a range from about 200째 C. to about 400째 C. and pressurizing the deposition chamber to a press
What is claimed is: 1. A method for forming a tungsten layer on a substrate surface, comprising: (a) positioning a substrate within a deposition chamber; (b) heating the substrate to a temperature within a range from about 200째 C. to about 400째 C. and pressurizing the deposition chamber to a pressure of at least about 1 Torr; (c) flowing a reducing gas into the deposition chamber, whereby the reducing gas is adsorbed onto a substrate surface of the substrate to form an adsorbed reducing gas layer; (d) purging the reducing gas from the deposition chamber; (e) flowing a tungsten-containing gas into the deposition chamber, whereby the tungsten-containing gas is exposed to the adsorbed reducing gas layer and is substantially reduced to form a tungsten film on the substrate surface; (f) purging the tungsten-containing gas from the deposition chamber; and (g) repeating (c) through (f) for one or more additional cycles to form a tungsten nucleation layer thereon. 2. The method of claim 1, further comprising exposing the substrate surface to an initiation gas prior to (c). 3. The method of claim 2, wherein the initiation gas comprises nitrogen or argon. 4. The method of claim 3, wherein the substrate surface is exposed to the initiation gas for about 5 seconds. 5. The method of claim 2, wherein the reducing gas comprises a member selected from the group consisting of diborane, hydrogen, silane, derivatives thereof, and combinations thereof. 6. The method of claim 1, wherein the reducing gas comprises diborane and hydrogen. 7. The method of claim 6, wherein the tungsten-containing gas comprises tungsten hexafluoride. 8. The method of claim 1, wherein the tungsten-containing gas comprises tungsten hexafluoride and hydrogen. 9. The method of claim 6, wherein the tungsten-containing gas comprises tungsten hexafluoride and hydrogen. 10. The method of claim 1, wherein (c) through (f) are repeated until a desired thickness of the tungsten nucleation layer is formed on the substrate. 11. The method of claim 10, wherein the desired thickness is within a range from about 10 Å to about 100 Å. 12. The method of claim 1, wherein the tungsten nucleation layer is deposited on a barrier layer disposed on the substrate surface. 13. The method of claim 12, wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, derivatives thereof, and combinations thereof. 14. The method of claim 1, wherein (d) or (f) comprises evacuating the deposition chamber for a predetermined time. 15. The method of claim 1, further comprises exposing the substrate to a gas selected from the group consisting of nitrogen, hydrogen, argon, diborane, and combinations thereof. 16. The method of claim 1, wherein the deposition chamber is a single station within a deposition system. 17. The method of claim 1, wherein the deposition chamber is a first deposition station within a deposition system containing multiple stations surrounded by a wall. 18. The method of claim 17, further comprising: positioning the substrate into a second deposition station within the deposition system; providing a second reducing gas and a second tungsten-containing gas to the second deposition station; and forming a tungsten material on the tungsten nucleation layer. 19. The method of claim 18, wherein the second reducing gas comprises silane. 20. The method of claim 19, wherein the second tungsten-containing gas comprises tungsten hexafluoride. 21. The method of claim 17, further comprising: positioning the substrate into a second deposition station within the deposition system; and forming a tungsten bulk layer on the tungsten nucleation layer by a chemical vapor deposition process. 22. The method of claim 17, further comprising: positioning the substrate into a second deposition station within the deposition system; and forming a tungsten bulk layer on the tungsten nucleation layer by a physical vapor deposition process. 23. The method of claim 17, further comprising: positioning the substrate having the tungsten nucleation layer into a second deposition station within the deposition system; and forming a tungsten plug fill layer on the tungsten nucleation layer by a chemical vapor deposition process or a physical vapor deposition process. 24. The method of claim 1, wherein the substrate is exposed to diborane prior to the tungsten-containing gas. 25. The method of claim 24, wherein the pressure is within a range from about 1 Torr to about 10 Torr. 26. A method for forming a tungsten layer on a substrate surface, comprising: (a) positioning a substrate at a first deposition station within a deposition system comprising at least two deposition stations; (b) flowing a reducing gas into the first deposition station, whereby the reducing gas is adsorbed onto a substrate surface of the substrate to form an adsorbed reducing gas layer; (c) purging the reducing gas from the first deposition station; (d) flowing a tungsten-containing gas into the first deposition station, whereby the tungsten-containing gas is exposed to the adsorbed reducing gas layer and is substantially reduced to form a tungsten film on the substrate surface; (e) purging the tungsten-containing gas from the first deposition station; (f) repeating (b) through (e) until a desired thickness of a tungsten nucleation layer is formed thereon; and (g) exposing the substrate to the tungsten-containing gas and a second reducing gas to deposit a tungsten bulk layer on the tungsten nucleation layer by a chemical vapor deposition process. 27. The method of claim 26, wherein the first deposition station is pressurized at a pressure of at least about 1 Torr. 28. The method of claim 27, wherein the first deposition station contains a heated substrate pedestal underneath a showerhead. 29. The method of claim 27, wherein (g) is conducted within a second deposition station. 30. The method of claim 29, wherein the second reducing gas comprises silane. 31. The method of claim 26, further comprising positioning the substrate into a second deposition station after (f) and prior to (g). 32. The method of claim 26, wherein the substrate is exposed to diborane prior to the tungsten-containing gas. 33. The method of claim 32, wherein the first deposition station is pressurized at a pressure within a range from about 1 Torr to about 10 Torr. 34. The method of claim 26, further comprising exposing the substrate surface to an initiation gas prior to (b). 35. The method of claim 34, wherein the initiation gas comprises nitrogen or argon. 36. The method of claim 35, wherein the substrate surface is exposed to the initiation gas for about 5 seconds. 37. The method of claim 35, wherein the reducing gas comprises a member selected from the group consisting of diborane, hydrogen, silane, derivatives thereof, and combinations thereof. 38. The method of claim 26, wherein the reducing gas comprises diborane and hydrogen. 39. The method of claim 38, wherein the tungsten-containing gas comprises tungsten hexafluoride. 40. The method of claim 26, wherein the tungsten-containing gas comprises tungsten hexafluoride and hydrogen. 41. The method of claim 38, wherein the tungsten-containing gas comprises tungsten hexafluoride and hydrogen. 42. The method of claim 26, wherein (b) through (e) are repeated until a desired thickness of the tungsten nucleation layer is formed on the substrate. 43. The method of claim 42, wherein the desired thickness is within a range from about 10 Å to about 100 Å. 44. The method of claim 26, wherein the tungsten nucleation layer is deposited on a barrier layer disposed on the substrate surface. 45. The method of claim 44, wherein the barrier layer comprises a material selected from the group consisting of titanium, titanium nitride, derivatives thereof, and combinations thereof. 46. The method of claim 26, wherein (c) or (e) comprises evacuating the first deposition station for a predetermined time. 47. The method of claim 26, further comprises exposing the substrate to a gas selected from the group consisting of nitrogen, hydrogen, argon, diborane, and combinations thereof. 48. A method for forming a tungsten layer on a substrate surface, comprising: (a) positioning a substrate within a deposition chamber; (b) heating the substrate to a temperature of at least about 200째 C. and pressurizing the deposition chamber to a pressure of at least about 1 Torr; (c) exposing a substrate surface of the substrate to an initiation gas; (d) flowing a reducing gas into the deposition chamber, whereby the reducing gas is adsorbed onto the substrate surface to form an adsorbed reducing gas layer; (e) purging the reducing gas from the deposition chamber; (f) flowing a tungsten-containing gas into the deposition chamber, whereby the tungsten-containing gas is exposed to the adsorbed reducing gas layer and is substantially reduced to form a tungsten film on the substrate surface; (g) purging the tungsten-containing gas from the deposition chamber; and (h) repeating (d) through (g) for one or more additional cycles to form a tungsten nucleation layer thereon. 49. The method of claim 48, wherein the initiation gas comprises nitrogen or argon. 50. The method of claim 49, wherein the substrate surface is exposed to the initiation gas for about 5 seconds. 51. The method of claim 48, wherein the reducing gas comprises a member selected from the group consisting of diborane, hydrogen, silane, derivatives thereof, and combinations thereof. 52. The method of claim 48, wherein the reducing gas comprises diborane and hydrogen. 53. The method of claim 48, wherein the tungsten-containing gas comprises tungsten hexafluoride and hydrogen. 54. A method for forming a tungsten layer on a substrate surface, comprising: positioning a substrate having a plurality of vias within a deposition chamber; exposing the substrate to an initiation gas; exposing the substrate to a reducing gas to form an adsorbed reducing gas layer; purging the reducing gas from the deposition chamber subsequent to forming the adsorbed reducing gas layer and prior to forming a tungsten film; exposing the substrate to a tungsten-containing gas to form the tungsten film within the vias; purging the tungsten-containing gas from the deposition chamber; repeating sequentially the exposing the substrate to the reducing gas and the tungsten-containing gas to form a tungsten nucleation layer thereon; and filling the vias with a tungsten bulk layer during a chemical vapor deposition process.
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Gurtej Sandhu ; Garo J. Derderian, ALD method to improve surface coverage.
Stall Richard A. (Warren NJ) Tompa Gary S. (Somerville NJ) Gurary Alexander (Bridgewater NJ) Nelson Craig R. (Berkeley Heights NJ), Apparatus for depositing a coating on a substrate.
Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques.
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Rajagopalan Ravi ; Ghanayem Steve ; Yamazaki Manabu,JPX ; Ohtsuka Keiichi,JPX ; Maeda Yuji,JPX, Chemical vapor deposition process for depositing tungsten.
Chan Lap ; Zheng Jia Zhen,SGX, Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer.
Kai-Erik Elers FI; Suvi P. Haukka FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Deposition of transition metal carbides.
DiMeo ; Jr. Frank ; Bilodeau Steven M. ; Van Buskirk Peter C., Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer.
Lee Woo-Hyeong ; Manchanda Lalita, Electronic components with doped metal oxide dielectric materials and a process for making electronic components with do.
Stumborg Michael F. ; Santiago Francisco ; Chu Tak Kin ; Boulais Kevin A., Electronic devices with composite atomic barrier film and process for making same.
Imai Masayuki (Kofu JPX) Nishimura Toshiharu (Kofu JPX), Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily.
Schumaker Norman E. (Warren NJ) Stall Richard A. (Warren NJ) Nelson Craig R. (Green Village NJ) Wagner Wilfried R. (Basking Ridge NJ), Gas treatment apparatus and method.
Cheng Hwa (Woodbury MN) DePuydt James M. (St. Paul MN) Haase Michael A. (Woodbury MN) Qiu Jun (Woodbury MN), Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy.
Van Hove James M. (Eagan MN) Kuznia Jon N. (Bloomington MN) Olson Donald T. (Roseville MN) Kahn Muhammad A. (White Bear Lake MN) Blasingame Margaret C. (Moundsview MN), High responsivity ultraviolet gallium nitride detector.
Zhao Jun ; Luo Lee ; Jin Xiao Liang ; Wang Jia-Xiang ; Wolff Stefan ; Sajoto Talex, High temperature, high deposition rate process and apparatus for depositing titanium layers.
Gaines James M. (Mohegan Lake NY) Petruzzello John (Carmel NY), II-VI compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same.
Bension Rouvain M. (310 Summit Ave. Brookline MA 02146) Truesdale Larry K. (27 Wetherill La. Chester Springs PA 19425), Initiation and bonding of diamond and other thin films.
Park In-seon,KRX ; Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Kim Byung-hee,KRX ; Lee Sang-min,KRX ; Park Chang-soo,KRX, Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature.
Nguyen, Anh N.; Yang, Michael X.; Xi, Ming; Chung, Hua; Chang, Anzhong; Yuan, Xiaoxiong; Lu, Siqing, Lid assembly for a processing system to facilitate sequential deposition techniques.
Aucoin Thomas R. (Ocean NJ) Wittstruck Richard H. (Howell NJ) Zhao Jing (Ellicott MD) Zawadzki Peter A. (Plainfield NJ) Baarck William R. (Fair Haven NJ) Norris Peter E. (Cambridge MA), Method and apparatus for depositing a refractory thin film by chemical vapor deposition.
Alessandra Satta BE; Karen Maex BE; Kai-Erik Elers FI; Ville Antero Saanila FI; Pekka Juha Soininen FI; Suvi P. Haukka FI, Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
Liu Jiang (Raleigh NC) Wolter Scott (Zebulon NC) McClure Michael T. (Raleigh NC) Stoner Brian R. (Chapel Hill NC) Glass Jeffrey T. (Apex NC) Hren John J. (Cary NC), Method for forming a diamond coated field emitter and device produced thereby.
Matsumoto Tomotaka (Kawasaki JPX) Inoue Jun (Kawasaki JPX) Ichimura Teruhiko (Kawasaki JPX) Murata Yuji (Kawasaki JPX) Watanabe Junichi (Kawasaki JPX) Nagahiro Yoshio (Kawasaki JPX) Hodate Mari (Kawa, Method for forming a film and method for manufacturing a thin film transistor.
Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Park Chang-soo,KRX ; Kim Young-sun,KRX, Method for forming dielectric film of capacitor having different thicknesses partly.
Nishizawa Junichi (6-16 ; Komegafukuro 1-chome ; Sendai-shi Miyagi JPX) Aoki Kenji (Matsudo JPX), Method for growing single crystal thin films of element semiconductor.
Kao Chien-Teh ; Tsai Kenneth ; Pham Quyen ; Rose Ronald L. ; Augason Calvin R. ; Yudovsky Joseph, Method for improved remote microwave plasma source for use with substrate processing system.
Foster Robert F. ; Hillman Joseph T. ; LeBlanc Rene E., Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor.
Kang Sang-bom,KRX ; Lim Hyun-seok,KRX ; Chae Yung-sook,KRX ; Jeon In-sang,KRX ; Choi Gil-heyun,KRX, Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor.
Sang-bum Kang KR; Yun-sook Chae KR; Sang-in Lee KR; Hyun-seok Lim KR; Mee-young Yoon KR, Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same.
Pessa Markus (Tampere FIX) Asonen Harry (Tampere FIX) Varrio Jukka (Tampere FIX) Salokatve Arto (Tampere FIX), Method of growing GaAs films on Si or GaAs substrates using ale.
Soininen Erkki Lauri,FIX ; Harkonen Gitte,FIX ; Lahonen Marja,FIX ; Tornqvist Runar,FIX ; Viljanen Juha,FIX, Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components.
Otsuka Nobuyuki (Kawasaki JPX), Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor la.
Pekka J. Soininen FI; Kai-Erik Elers FI; Suvi Haukka FI, Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH.
Turner Norman L. (Mountain View CA) White John MacNeill (Los Gatos CA) Berkstresser David (Los Gatos CA), Method of heating and cooling large area glass substrates.
Nasu Yasuhiro (Sagamihara JPX) Okamoto Kenji (Hiratsuka JPX) Watanabe Jun-ichi (Kawasaki JPX) Endo Tetsuro (Atsugi JPX) Soeda Shinichi (Hiratsuka JPX), Method of manufacturing active matrix display device using insulation layer formed by the ale method.
Olubunmi O. Adetutu ; Yeong-Jyh T. Lii ; Paul A. Grudowski, Method of preventing two neighboring contacts from a short-circuit caused by a void between them and device having the same.
Dautartas Mindaugas F. ; Manchanda Lalita, Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants.
Falconer John L. ; George Steven M. ; Ott Andrew W. ; Klaus Jason W. ; Noble Richard D. ; Funke Hans H., Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition.
Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Wang David N. (Cupertino CA) Cheng David (San Jose CA) Toshima Masato (San Jose CA) Harari Isaac (Mountain View CA) Hoppe Peter D. (Sun, Multi-chamber integrated process system.
Maydan Dan ; Somekh Sasson ; Wang David Nin-Kou ; Cheng David ; Toshima Masato ; Harari Isaac ; Hoppe Peter D., Multiple chamber integrated process system.
Aspnes David E. (Watchung NJ) Bhat Rajaram (Red Bank NJ) Colas Etienne G. (Asbury Park NJ) Florez Leigh T. (Atlantic Highlands NJ) Harbison James P. (Fair Haven NJ) Studna Amabrose A. (Raritan NJ), Optical control of deposition of crystal monolayers.
Foley Henry C. (Newark DE) Varrin ; Jr. Robert D. (Newark DE) Sengupta Sourav K. (Newark DE), Plasma-induced, in-situ generation, transport and use or collection of reactive precursors.
Boitnott Charles A. (Half Moon Bay CA) Caughran James W. (Lodi CA) Egbert Steve (Palo Alto CA), Process chamber sleeve with ring seals for isolating individual process modules in a common cluster.
Chang Mei (Cupertino CA) Leung Cissy (Fremont CA) Wang David N. (Saratoga CA) Cheng David (San Jose CA), Process for CVD deposition of tungsten layer on semiconductor wafer.
Saanila, Ville Antero; Elers, Kai-Erik; Kaipio, Sari Johanna; Soininen, Pekka Juha, Process for growing metalloid thin films utilizing boron-containing reducing agents.
Comizzoli Robert Benedict ; Dautartas Mindaugas Fernand ; Osenbach John William, Process for passivating semiconductor laser structures with severe steps in surface topography.
Elers, Kai-Erik; Saanila, Ville Antero; Kaipio, Sari Johanna; Soininen, Pekka Juha, Production of elemental thin films using a boron-containing reducing agent.
Kai-Erik Elers FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Production of elemental thin films using a boron-containing reducing agent.
Mee-Young Yoon KR; Sang-In Lee KR; Hyun-Seok Lim KR, Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer.
Kwon Dong-chul,KRX ; Wee Young-jin,KRX ; Shin Hong-jae,KRX ; Kim Sung-jin,KRX, Semiconductor device having improved metal line structure and manufacturing method therefor.
Connell George A. N. (Cupertino CA) Fenner David B. (Menlo Park CA) Boyce James B. (Los Altos CA) Fork David K. (Palo Alto CA), Silicon substrate having an epitaxial superconducting layer thereon and method of making same.
Beaulieu David ; Pippins Michael W., Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer.
Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.
Nakata Yukihiko,JPX ; Fujihara Masaki,JPX ; Date Masahiro,JPX ; Matsuo Takuya,JPX ; Ayukawa Michiteru,JPX ; Itoga Takashi,JPX, Thin-film semiconductor device including a semiconductor film with high field-effect mobility.
John M. Grant ; Olubunmi O. Adetutu ; Yolanda S. Musgrove, Transistor metal gate structure that minimizes non-planarity effects and method of formation.
Dawson, Robert; Gardner, Mark I.; Hause, Frederick N.; Fulford, Jr., H. Jim; Michael, Mark W.; Moore, Bradley T.; Wristers, Derick J., Tri-level segmented control transistor and fabrication method.
Edwards Richard C. (Ringwood NJ) Kolesa Michael S. (Suffern NY) Ishikawa Hiroichi (Mahwah NJ), Wafer processing cluster tool batch preheating and degassing apparatus.
Thorne James M. (Provo UT) Shurtleff James K. (Sandy UT) Allred David D. (Provo UT) Perkins Raymond T. (Provo UT), X-ray wave diffraction optics constructed by atomic layer epitaxy.
Xi, Ming; Sinha, Ashok; Kori, Moris; Mak, Alfred W.; Lu, Xinliang; Lai, Ken Kaung; Littau, Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
Lu, Xinliang; Jian, Ping; Yoo, Jong Hyun; Lai, Ken Kaung; Mak, Alfred W.; Jackson, Robert L.; Xi, Ming, Pulsed deposition process for tungsten nucleation.
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