초록 ▼

The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before deposit

The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before depositing an organic semiconductor active layer on the substrate, the organic semiconductor material is deposited on only the organic semiconductor active layer having an island shape. Therefore, it is not necessary to use a shadow mask method or a photolithography method to manufacture an active matrix array. Accordingly, the present invention has advantages in that it is possible to obtain a high resolution thin film transistor array and to prevent characteristics of the thin film transistors in the array from being deteriorated.

대표청구항 ▼

What is claimed is: 1. A method of manufacturing a thin film transistor array comprising switching thin film transistors, pixel electrodes, and connecting elements connecting the switching thin film transistors and the pixel electrodes, the method comprising steps of forming gate lines on a substra

What is claimed is: 1. A method of manufacturing a thin film transistor array comprising switching thin film transistors, pixel electrodes, and connecting elements connecting the switching thin film transistors and the pixel electrodes, the method comprising steps of forming gate lines on a substrate; forming gate insulating film to cover the gate lines formed on the substrate; forming source and drain electrodes on the gate insulating film; performing locally a plasma process on a substrate having a hydrophobic area so as to define discrete hydrophilic and hydrophobic surfaces; forming a monolayer where a self-assembled monolayer is to be formed by exposing said hydrophilic and hydrophobic surfaces to a semiconductor vacuum deposition process such that an organic semiconductor material is only deposited as a semiconductor active layer having an island shape on a hydrophobic surface; forming a protective layer to cover the organic semiconductor island; and forming contact holes though the protective film. 2. The method according to claim 1, where the gate lines are made of aluminum or aluminum alloy. 3. The method according to claim 1, wherein the gate insulating film is made of an organic material. 4. The method according to claim 3, wherein the organic material is made of PVP (polyvinylphenol), BCB (benzocylobutene), or PI (polyimide). 5. The method according to claim 1 further comprising a step of forming a pixel electrode on the gate insulating film. 6. The method according to claim 5, wherein the pixel electrode is made of ITO or IZO. 7. The method according to claim 1 further comprising a step of maintaining temperature of the substrate in a range of 100 to 200째 C., thereby selectively forming the organic semiconductor island on the source and drain electrodes. 8. The method according to claim 1 further comprising a step of performing a surface treatment on the substrate and selectively depositing pantacene between the source and drain electrodes without shadow mask. 9. The method according to claim 8, wherein the step of performing the surface treatment comprises steps of: performing a plasma process on the substrate; and forming a monolayer where a self assembled monolayer is to be formed. 10. The method according to claim 9, wherein the monolayer is OTS (octadecyltrichlorosilane). 11. The method according to claim 1, wherein the organic semiconductor island is made of pantacene. 12. The method according to claim 1 further comprising a step of forming a protective layer on the organic semiconductor island to prevent damage on crystal of the organic semiconductor island, wherein a protective layer is an organic semiconductor film or an organic insulating film. 13. The method according to claim 12, wherein the organic semiconductor film or the organic insulating film is formed by using a selective photolithography process.