초록 ▼

A method of unblinding an alignment mark comprising the following steps. A substrate having a cell area and an alignment mark within an alignment area is provided. An STI trench is formed into the substrate within the cell area. A silicon oxide layer is formed over the substrate, filling the STI tre

A method of unblinding an alignment mark comprising the following steps. A substrate having a cell area and an alignment mark within an alignment area is provided. An STI trench is formed into the substrate within the cell area. A silicon oxide layer is formed over the substrate, filling the STI trench and the alignment mark. The silicon oxide layer is planarized to form a planarized STI within the STI trench and leaving silicon oxide within the alignment mark to form a blinded alignment mark. A wet chemical etchant is applied within the alignment mark area over the blinded alignment mark to at least partially remove the silicon oxide within the alignment mark. The remaining silicon oxide is removed from within the blinded alignment mark to unblind the alignment mark. A drop etcher apparatus is also disclosed.

대표청구항 ▼

We claim: 1. A drop etcher apparatus, comprising: a control unit; a dispenser tube having: an upper end; a semiconductor structure; and a lower tip proximate an upper surface of the semiconductor structure; a chemical reservoir partially filled with a chemical within the dispenser tube; the chemica

We claim: 1. A drop etcher apparatus, comprising: a control unit; a dispenser tube having: an upper end; a semiconductor structure; and a lower tip proximate an upper surface of the semiconductor structure; a chemical reservoir partially filled with a chemical within the dispenser tube; the chemical reservoir having an initial upper surface; and a dispenser line comprising a pressurized gas connecting the control unit to the upper end of the dispenser tube, wherein the control unit controls a flow of the pressurized gas to dispense a predetermined amount of a drop of the chemical to remove blinded alignment marks of the upper surface of the semiconductor structure, wherein the predetermined amount of the drop is dispensed through the lower tip of the dispensing tube to the upper surface of the semiconductor structure by exertion of pressure from the gas flowing through the dispenser line to the initial upper surface of the chemical reservoir; a filter interposed in the dispenser line through which the gas flows to filter the gas; a pressure regulator interposed in the dispenser line through which the gas flows to regulate the pressure of the gas; and a high-speed shut-off valve interposed in the dispenser line through which the gas flows to regulate the flow of the gas, wherein the high-speed shut-off valve has a radius, and wherein the pressure regulator, the high speed shut-off valve, and the filter are external to the control unit; wherein the upper surface of the semiconductor structure comprises an alignment mark area and a cell area, wherein the alignment mark area is spaced apart from a shallow trench isolation opening of the cell area, and wherein the lower tip of the dispensing tube is aligned with the blinded alignment marks of the alignment mark area. 2. The apparatus of claim 1, wherein the radius of the high-speed shut-off valve is from about 0.05 to 5.0 mm. 3. The apparatus of claim 1, wherein a distance between the lower tip of the dispensing tube and the surface of the semiconductor structure is from about 1.0 μm to 1.0 cm. 4. The apparatus of claim 1, wherein the control unit controls the predetermined amount of the drop to dispense based on a product of a length of time the pressure regulator applies the pressure to the gas, the radius-of the shut-off valve, and an amount of pressure to the gas the pressure regulator applies. 5. The apparatus of claim 1, wherein the lower tip has an inside diameter of from about 0.1 to 1.0 mm. 6. The apparatus of claim 1, wherein the lower tip has an inside diameter of from about 0.01 to 2.00 mm. 7. The apparatus of claim 4, wherein the amount of pressure to the gas the pressure regulator applies is from about 0.001 to 5.000 psi. 8. The apparatus of claim 4, wherein the amount of pressure to the gas the pressure regulator applies is from about 0.001 to 10.000 psi. 9. The apparatus of claim 4, wherein the amount of pressure to the gas the pressure regulator applies is from about 0.001 to 5.000 psi and flows through the dispenser line for from about 0.001 to 5.000 seconds. 10. The apparatus of claim 4, wherein the amount of pressure to the gas the pressure regulator applies is from about 0.001 to 5.000 psi and the length of time the pressure regulator applies the pressure to the gas is from about 0.001 to 10.000 seconds.