IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0535015
(2000-03-24)
|
우선권정보 |
JP-8-088759(1996-03-17) |
발명자
/ 주소 |
- Yamazaki,Shunpei
- Ohtani,Hisashi
- Hamatani,Toshiji
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
Robinson Intellectual Property Law Office, P.C.
|
인용정보 |
피인용 횟수 :
17 인용 특허 :
229 |
초록
▼
A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103 disposed on a quartz substrate 101. A crystal silicon film 105 is obtained by this heat treatment. Then, a oxide film 106 is formed by wet oxidation. At this time, the nickel element i
A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103 disposed on a quartz substrate 101. A crystal silicon film 105 is obtained by this heat treatment. Then, a oxide film 106 is formed by wet oxidation. At this time, the nickel element is gettered to the oxide film 106 by an action of fluorite. Then, the oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.
대표청구항
▼
The invention claimed is: 1. A semiconductor device comprising: a substrate; at least one first insulating film formed over said substrate, said first insulating film comprising silicon oxide; a semiconductor film comprising crystalline silicon formed over the first insulating film, said semiconduc
The invention claimed is: 1. A semiconductor device comprising: a substrate; at least one first insulating film formed over said substrate, said first insulating film comprising silicon oxide; a semiconductor film comprising crystalline silicon formed over the first insulating film, said semiconductor film including at least one channel forming region, a source region and a drain region; a gate insulating film comprising silicon oxide formed by oxidizing a surface of the semiconductor film; a gate electrode formed over the channel forming region with the gate insulating film interposed therebetween; a second insulating film comprising silicon nitride formed over said semiconductor film and said gate electrode; a third insulating film comprising a resin; and at least one electrode formed over said third insulating film and electrically connected to one of said source region and said drain region. 2. A semiconductor device according to claim 1, wherein said semiconductor film contains hydrogen atoms at a concentration of 1횞10 17 cm-3 to 1횞1021 cm-3. 3. A semiconductor device according to claim 1, wherein said semiconductor film contains oxygen atoms, carbon and nitrogen at a concentration of 2횞1019 cm-3 or less, respectively. 4. A semiconductor device according to claim 1, wherein said source and drain regions are not overlapped with said gate insulating film. 5. A semiconductor device according to claim 1, wherein said semiconductor device is an active matrix type liquid crystal display device. 6. A semiconductor device comprising: a substrate; at least one first insulating film formed over said substrate, said first insulating film comprising silicon oxide; a semiconductor film comprising crystalline silicon formed over the first insulating film, said semiconductor film including at least one channel forming region, a source region and a drain region; a gate insulating film comprising a first layer and a second layer wherein said first layer comprises silicon oxide formed by oxidizing a surface of the semiconductor film and said second layer comprises silicon oxide formed on the first layer: a gate electrode formed over the channel forming region with the gate insulating film interposed therebetween; a second insulating film comprising silicon nitride formed over said semiconductor film and said gate electrode; a third insulating film comprising a resin; and at least one electrode formed over said third insulating film and electrically connected to one of said source region and said drain region. 7. A semiconductor device according to claim 6, wherein said semiconductor film contains hydrogen atoms at a concentration of 1횞10 17 cm-3 to 1횞1021 cm-3. 8. A semiconductor device according to claim 6, wherein said semiconductor film contains oxygen atoms, carbon and nitrogen at a concentration of 2횞1019 cm-3 or less, respectively. 9. A semiconductor device according to claim 6, wherein said source and drain regions are not overlapped with said gate insulating film. 10. A semiconductor device according to claim 6, wherein said semiconductor device is an active matrix type liquid crystal display device. 11. A semiconductor device comprising: a substrate; at least one first insulating film formed over said substrate, said first insulating film comprising silicon oxide; a semiconductor film comprising crystalline silicon formed over the first insulating film, said semiconductor film including at least one channel forming region, a source region, a drain region and at least one lightly doped region; a gate insulating film comprising silicon oxide formed by oxidizing a surface of the semiconductor film; a gate electrode formed over the channel forming region with the gate insulating film interposed therebetween; a second insulating film comprising silicon nitride formed over said semiconductor film and said gate electrode; a third insulating film comprising a resin; and at least one electrode formed over said third insulating film and electrically connected to one of said source region and said drain region, and wherein said lightly doped region has a lower impurity concentration than said source and drain regions. 12. A semiconductor device according to claim 11, wherein said semiconductor film contains hydrogen atoms at a concentration of 1횞1017 cm-3 to 1횞1021 cm-3. 13. A semiconductor device according to claim 11, wherein said semiconductor film contains oxygen atoms, carbon and nitrogen at a concentration of 2횞1019 cm-3 or less, respectively. 14. A semiconductor device according to claim 11, wherein said source and drain regions are not overlapped with said gate insulating film. 15. A semiconductor device according to claim 11, wherein said lightly doped region is overlapped with said gate insulating film. 16. A semiconductor device according to claim 11, wherein said semiconductor device is an active matrix type liquid crystal display device. 17. A semiconductor device comprising: a substrate; at least one first insulating film formed over said substrate, said first insulating film comprising silicon oxide; a semiconductor film comprising crystalline silicon formed over the first insulating film, said semiconductor film including at least one channel forming region, a source region, a drain region and at least one lightly doped region; a gate insulating film comprising silicon oxide formed by oxidizing a surface of the semiconductor film; a gate electrode formed over the channel forming region with the gate insulating film interposed therebetween; a second insulating film comprising silicon nitride formed over said semiconductor film and said gate electrode; a third insulating film comprising a resin; and at least one electrode formed over said third insulating film and electrically connected to one of said source region and said drain region, wherein said lightly doped region has a lower impurity concentration than said source and drain regions, and wherein said lightly doped region is not overlapped with said gate electrode. 18. A semiconductor device according to claim 17, wherein said semiconductor film contains hydrogen atoms at a concentration of 1횞1017 cm-3 to 1횞1021 cm-3. 19. A semiconductor device according to claim 17, wherein said semiconductor film contains oxygen atoms, carbon and nitrogen at a concentration of 2횞1019 cm3 or less, respectively. 20. A semiconductor device according to claim 17, wherein said source and drain regions are not overlapped with said gate insulating film. 21. A semiconductor device according to claim 17, wherein said lightly doped region is overlapped with said gate insulating film. 22. A semiconductor device according to claim 17, wherein said semiconductor device is an active matrix type liquid crystal display device. 23. A semiconductor device comprising: an n-channel type thin film transistor and a p-channel type thin film transistor formed over a substrate in a complementary manner, each of said n-channel type thin film transistor and said p-channel type thin film transistor comprising: at least one first insulating film formed over said substrate, said first insulating film comprising silicon oxide; a semiconductor film comprising crystalline silicon formed over the first insulating film, said semiconductor film including at least one channel forming region, a source region and a drain region; a gate insulating film comprising silicon oxide formed by oxidizing a surface of the semiconductor film; a gate electrode formed over the channel forming region with the gate insulating film interposed therebetween; a second insulating film comprising silicon nitride formed over said semiconductor film and said gate electrode; a third insulating film comprising a resin; and at least one electrode formed over said third insulating film and electrically connected to one of said source region and said drain region. 24. A semiconductor device according to claim 23, wherein said semiconductor film contains hydrogen atoms at a concentration of 1횞1017 cm-3 to 1횞1021 cm-3. 25. A semiconductor device according to claim 23, wherein said semiconductor film contains oxygen atoms, carbon and nitrogen at a concentration of 2횞1019 cm-3 or less, respectively. 26. A semiconductor device according to claim 23, wherein said source and drain regions are not overlapped with said gate insulating film. 27. A semiconductor device according to claim 23, wherein said semiconductor device is an active matrix type liquid crystal display device. 28. A semiconductor device comprising: a substrate; at least one first insulating film formed over said substrate, said first insulating film comprising silicon oxide nitride; a semiconductor film comprising crystalline silicon formed over the first insulating film, said semiconductor film including at least one channel forming region, a source region and a drain region; a gate insulating film comprising silicon oxide formed by oxidizing a surface of the semiconductor film; a gate electrode formed over the channel forming region with the gate insulating film interposed therebetween; a second insulating film comprising silicon nitride formed over said semiconductor film and said gate electrode; a third insulating film comprising a resin; and at least one electrode formed over said third insulating film and electrically connected to one of said source region and said drain region. 29. A semiconductor device according to claim 28, wherein said semiconductor film contains hydrogen atoms at a concentration of 1횞1017 cm-3 to 1횞1021 cm-3. 30. A semiconductor device according to claim 28, wherein said semiconductor film contains oxygen atoms, carbon and nitrogen at a concentration of 2횞1019 cm-3 or less, respectively. 31. A semiconductor device according to claim 28, wherein said source and drain regions are not overlapped with said gate insulating film. 32. A semiconductor device according to claim 28, wherein said semiconductor device is an active matrix type liquid crystal display device.
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