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A semiconductor device for dissipating heat generated by a die during operation and having a low height profile, a semiconductor die package incorporating the device, and methods of fabricating the device and package are provided. In one embodiment, the semiconductor device comprises a thick thermal

A semiconductor device for dissipating heat generated by a die during operation and having a low height profile, a semiconductor die package incorporating the device, and methods of fabricating the device and package are provided. In one embodiment, the semiconductor device comprises a thick thermally conductive plane (e.g., copper plane) mounted on a thin support substrate and interfaced with a die. Thermally conductive via interconnects extending through the substrate conduct heat generated by the die from the conductive plane to conductive balls mounted on traces on the opposing side of the substrate. In another embodiment, the semiconductor devices comprises a thick thermally conductive plane (e.g., copper foil) sandwiched between insulative layers, with signal planes (e.g., traces, bonding pads) disposed on the insulative layers, a die mounted on a first signal plane, and solder balls mounted on bonding pads of a second signal plane. A thermally conductive via interconnect extends through the substrate to provide a thermal path from the die and signal plane (traces) through the thick conductive plane and into the solder balls and external device (e.g., mother board). The present semiconductor device provides effective heat dissipation without the attachment of an external heat sink or spreader.

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What is claimed is: 1. A semiconductor device, comprising: a support substrate having a first side and a second side; and a plurality of thermally-conductive via interconnects extending therethrough; a thermally-conductive plane layer overlying the first side of the support substrate; a first solde

What is claimed is: 1. A semiconductor device, comprising: a support substrate having a first side and a second side; and a plurality of thermally-conductive via interconnects extending therethrough; a thermally-conductive plane layer overlying the first side of the support substrate; a first soldermask overlying the thermally-conductive plane layer; a semiconductor die mounted over the first soldermask; a layer of electrically-conductive traces overlying a portion of the second side of the support substrate, the traces not in contact with the thermally-conductive via interconnects; a second soldermask overlying the electrically-conductive traces; a first array of a plurality of electrically-conductive balls disposed through openings in the soldermask overlying the electrically-conductive traces, the electrically-conductive balls in contact wit the electrically-conductive traces but not with the thermally-conductive via interconnects; and a second array of a plurality of thermally-conductive balls disposed on the second side of the support substrate in contact with the thermally-conductive via interconnects but not with the electrically-conductive traces, such that heat from the die conveyed into the thermally-conductive plane layer is conveyed through the thermally-conductive via interconnects and into the thermally-conductive balls but not into the electrically-conductive balls. 2. A semiconductor die package, comprising an encapsulated semiconductor device, the semiconductor device comprising: a support substrate having a first side and a second side; and a plurality of thermally-conductive via interconnects extending therethrough; a thermally-conductive plane layer overlying the first side of the support substrate; a first soldermask overlying the thermally-conductive plane layer; a semiconductor die mounted over the first soldermask; a layer of electrically-conductive traces overlying at least a portion of the second side of the support substrate, the traces not in contact with the thermally-conductive via interconnects; a second soldermask overlying the electrically-conductive traces; a first array of a plurality of electrically-conductive contacts disposed through openings in the soldermask overlying the electrically-conductive traces, the electrically-conductive contacts in contact with the electrically-conductive traces but not with the thermally-conductive via interconnects; and a second array of a plurality of thermally-conductive contacts disposed on the second side of the support substrate in contact with the thermally-conductive via interconnects but not with the electrically-conductive traces, such that heat from the die passing through the thermally-conductive plane layer is conveyed through the thermally-conductive via interconnects and into the thermally-conductive contacts but not into the electrically-conductive contacts. 3. A semiconductor device, comprising: an insulative support substrate; a thermally-conductive material layer on a first side of the support substrate; an insulative soldermask layer directly formed on the thermally-conductive material layer; electrically-conductive traces on a second side of the support substrate; a semiconductor die mounted on the insulative soldermask layer; one or more thermally-conductive plated through hole via interconnects through the support substrate and in communication with the thermally-conductive material layer and with one or more thermally-conductive contacts on the second surface of the support substrate but not with the electrically-conductive traces and not electrically connected to the die, such that heat generated from the die dispersed into the thermally-conductive material layer is conveyed through the thermally-conductive via interconnects and into the thermally-conductive contacts but not into the electrically-conductive traces. 4. A semiconductor die assembly, comprising: means for conducting heat, the heat conducting means situated between a semiconductor die and a first side of a support substrate, a second side of the support substrate having an electrically-conductive trace situated thereon, and a soldermask layer directly formed over the heat conducting means; and means for passing heat from the heat-conducting means through the support substrate and to an external device, the heat-passing means comprising a thermally-conductive plated through hale via interconnect extending through the support substrate and a thermally-conductive contact situated on the second side of the support substrate, said thermally-conductive via interconnect connecting the heat conducting means to the thermally-conductive contact but not to the electrically-conductive trace, such that heat from the die dispersed into the heat-conducting means is conducted through the thermally-conductive via interconnect and into the thermally-conductive contact but not into the electrically-conductive trace, and the heat-passing means not electrically connected to the die. 5. The assembly of claim 4, wherein the support substrate comprises polyimide. 6. The assembly of claim 4, wherein the support substrate comprises an epoxy resin composite. 7. The assembly of claim 4, wherein the support substrate comprises an FR-4 laminate or FR-5 laminate. 8. The assembly of claim 4, wherein the heat-conducting means comprises a layer of a conductive metal selected from the group consisting of copper, plated copper, aluminum, gold, gold plated metals, nickel, and an alloy thereof. 9. The assembly of claim 4, wherein the heat-conducting means comprises a layer of copper. 10. The assembly of claim 4, wherein the thermally-conductive via interconnects comprise a plated metal. 11. The assembly of claim 4, wherein the thermally-conductive via interconnects comprise a pad-in-via or pad-on-via. 12. The assembly of claim 4, wherein the thermally-conductive contact comprises a solder material. 13. The assembly of claim 4, wherein the thermally-conductive contact comprises a conductive epoxy or conductor-filled epoxy material. 14. The assembly of claim 4, comprising a plurality of thermally-conductive contacts in a grid array. 15. The assembly of claim 4, being at least partially encapsulated to form a die package. 16. A semiconductor die assembly, comprising: a thermally-conductive material layer on a first side of an insulative support substrate; an insulative soldermask layer directly formed on the thermally-conductive material layer; electrically-conductive traces on a second side of the support substrate; a semiconductor die mounted on the soldermask layer; one or more thermally-conductive plated through hole via interconnects through the support substrate in communication with the thermally-conductive material layer but not electrically connected to the die; and means for connecting the assembly to an external electrical apparatus, said assembly connecting means being mounted on a second side of the support substrate and comprising a first set of thermally-conductive assembly connecting means being connected to the one or more thermally-conductive via interconnects but not to the electrically-conductive traces, and a second set of electrically-conductive assembly connecting means being connected to the electrically-conductive traces but not to the thermally-conductive via interconnects, such that heat from the die dispersed into the thermally-conductive material layer is conveyed through the thermally-conductive via interconnects and into the thermally-conductive assembly connecting means, but not into the electrically-conductive traces or the electrically-conductive assembly connecting means. 17. The semiconductor die of claim 16, wherein the assembly connecting means comprises contacts comprising solder. 18. The semiconductor die of claim 17, wherein the contacts comprise solder balls. 19. The semiconductor die of claim 16, wherein the assembly connecting means comprises contacts comprising conductive epoxy or conductor-filled epoxy. 20. A system, comprising: an electrical apparatus; and a semiconductor device in communication with the electrical apparatus, the semiconductor device comprising: an insulative support substrate; a first side of a thermally-conductive material layer on a first side of the support substrate; electrically-conductive traces on a second side of the support substrate; an insulative soldermask layer directly formed on a second side of the thermally-conductive material layer; a semiconductor die mounted on the soldermask layer; one or more thermally-conductive plated through hole via interconnects through the support substrate and in communication with the thermally-conductive material layer but not in contact with the electrically conductive traces and not electrically connected to the die; and one or more thermally-conductive contacts on a second surface of the support substrate and connected to the one or more thermally-conductive via interconnects but not to the electrically-conductive traces such that heat from the die dispersed into the thermally-conductive material layer is conveyed through the thermally-conductive via interconnects and into the thermally-conductive contacts but not into the electrically-conductive traces. 21. The system of claim 20, wherein the electrical apparatus is selected from the group consisting of a circuit board and a mother board. 22. A system, comprising: an electrical apparatus; and a semiconductor device in communication with the electrical apparatus, the semiconductor device comprising: a polyimide tape having a thickness and copper plated through hole via interconnects extending through the thickness of the tape; a first surface of a copper heat sink layer on a first side of the tape; the heat sink layer having a thickness greater than the thickness of the tape; an insulative soldermask layer directly formed over a second surface of the copper heat sink layer; a semiconductor die mounted on the soldermask layer; electrically-conductive signal traces on a second side of the polyimide tape, the traces not in contact with the via interconnects; and thermally-conductive contacts on the second side of the polyimide tape and connected to the via interconnects but not to the electrically-conductive signal traces and not electrically connected to the die, such that heat from the die passing into the copper heat sink layer is conveyed through the via interconnects and into the thermally conductive contacts but not into the electrically-conductive signal traces. 23. A semiconductor device, comprising: an insulative support substrate; a first surface of a thermally-conductive material layer on a first side of the support substrate; an insulative soldermask layer directly formed over a second surface of the thermally-conductive material layer; electrically-conductive traces on a second side of the support substrate; a semiconductor die mounted on the soldermask layer; one or more thermally-conductive via interconnects through the insulative support substrate and in communication with the thermally-conductive material layer but not with the electrically-conductive traces and not electrically connected to the die; and a thermally-conductive contact on the second side of the support substrate in contact with each of the thermally-conductive via interconnects but not with the electrically-conductive traces such that heat generated from the die and dispersed into the thermally-conductive layer is conveyed into the thermally-conductive via interconnects and into the thermally-conductive contacts but not into the electrically-conductive traces. 24. A semiconductor device, comprising: an insulative support substrate; a thermally-conductive material layer on a first side of the support substrate; a soldermask layer directly overlying at least a portion of the thermally-conductive material layer; electrically-conductive traces on a second side of the support substrate; a semiconductor die mounted on the thermally-conductive material layer; a thermally-conductive plated through hole via interconnect through the support substrate and in communication with the thermally-conductive material layer and with a thermally-conductive contact on the second surface of the support substrate but not in contact with the electrically-conductive traces and not electrically connected to the die, such that heat generated from the die and dispersed into the thermally-conductive material layer is conveyed into the plated through hole via interconnect and into the thermally-conductive contact but not into the electrically-conductive traces. 25. A semiconductor device, comprising: a support substrate comprising an epoxy resin composite; a thermally-conductive material layer on a first side of the support substrate; a soldermask layer directly overlying at least a portion of the thermally-conductive material layer; electrically-conductive traces on a second side of the support substrate; a semiconductor die mounted on the thermally-conductive material layer; a thermally-conductive via interconnect through the support substrate and in communication with the thermally-conductive material layer and with a thermally-conductive contact on the second surface of the support substrate but not in contact with the electrically-conductive traces and not electrically connected to the die, such that heat generated from the die and dispersed into the thermally-conductive material layer is conveyed into the thermally-conductive via interconnect and into the thermally-conductive contact but not into the electrically-conductive traces. 26. A semiconductor device, comprising: a support substrate comprising an FR-4 laminate or FR-5 laminate; a thermally-conductive material layer on a first side of the support substrate; a soldermask layer directly overlying at least a portion of the thermally-conductive material layer; electrically-conductive traces on a second side of the support substrate; a semiconductor die mounted on the thermally-conductive material layer; a thermally-conductive via interconnect through the support substrate and in communication with the thermally-conductive material layer and with a thermally-conductive contact on the second surface of the support substrate but not in contact with the electrically-conductive traces such that heat generated from the die and dispersed into the thermally-conductive material layer is conveyed into the thermally-conductive via interconnect and into the thermally-conductive contact but not into the electrically-conductive traces, the thermally-conductive contact not electrically connected to the die. 27. A semiconductor device, comprising: a core substrate having a first side and a second side; a metal heat sink layer on the first side of the core substrate; a soldermask layer directly overlying at least a portion of the metal heat sink layer; a semiconductor die on the metal heat sink layer, the soldermask layer, or a combination thereof; a plurality of thermally-conductive via interconnects extending through the support substrate from the first side to the second side; electrically-conductive traces connected to a plurality of bond pads on the second side of the core substrate, the bond pads arranged in a ball grid array, and a plurality of electrically-conductive ball contacts on the ball pads; and thermally-conductive ball contacts mounted on the second side of the support substrate in contact with the via interconnects but not with the traces, the bond pads or the electrically-conductive ball contacts, such that heat generated from the die and conveyed through the metal heat sink layer is conveyed trough the via interconnects and into the thermally-conductive ball contacts but not into the electrically-conductive ball contacts, and the thermally-conductive ball contacts are not electrically connected to the die. 28. A semiconductor device, comprising: a heat sink layer interposed between a semiconductor die and a first surface of a core substrate, a soldermask layer directly overlying at least a portion of the heat sink layer; electrically-conductive traces on a second surface of the core substrate, each of the traces connected to a ball pad, and a plurality of electrically-conductive ball contacts situated on the ball pads; and a plurality of via interconnects extending through the core substrate, the via interconnects comprising a thermally conductive material and connecting the heat sink layer to thermally-conductive ball contacts situated on the second surface of the core substrate, the via interconnects and the thermally-conductive ball contacts not connected to the traces, ball pads, or the electrically-conductive ball contacts, and not electrically connected to the die, such that heat generated from the die and conveyed through the heat sink layer is conveyed through the via interconnects and into the thermally-conductive ball contacts but not into the traces, ball pads, or the electrically-conductive ball contacts.