Method for fabricating a semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/20
H01L-021/02
H01L-021/36
출원번호
US-0305213
(2005-12-19)
우선권정보
JP-8-32874(1996-01-26)
발명자
/ 주소
Yamazaki,Shunpei
Teramoto,Satoshi
Koyama,Jun
Ogata,Yasushi
Hayakawa,Masahiko
Osame,Mitsuaki
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson Intellectual Property Law Office, P.C.
인용정보
피인용 횟수 :
16인용 특허 :
226
초록▼
Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film 103. Then, las
Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse nickel element which is concentrated locally. After that, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Then, the thermal oxide film 106 is removed. Thereby, a crystalline silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.
대표청구항▼
What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming a semiconductor film comprising amorphous silicon over a substrate; providing the semiconductor film with a metal containing material for promoting crystallization of the semiconductor film; crystallizing t
What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming a semiconductor film comprising amorphous silicon over a substrate; providing the semiconductor film with a metal containing material for promoting crystallization of the semiconductor film; crystallizing the semiconductor film by heating; irradiating the crystallized semiconductor film with laser light so as to distribute the metal in the crystallized semiconductor film; removing the distributed metal from the crystallized semiconductor film by gettering after the irradiation of the laser light; forming a semiconductor island having a tapered shape by patterning the crystallized semiconductor film, the tapered shape having an angle within a range of 20째 to 50째 between a side thereof and an underlying surface; forming a gate insulating film over the semiconductor island; forming a gate electrode over the semiconductor island with the gate insulating film therebetween; and forming at least a source region and a drain region in the semiconductor island. 2. A method for manufacturing a semiconductor device according to claim 1, wherein the patterning is performed by an isotropic dry etching method. 3. A method for manufacturing a semiconductor device according to claim 1, wherein the metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au. 4. A method for manufacturing a semiconductor device according to claim 1, wherein the gettering is performed by heating the crystallized semiconductor film in a halogen containing atmosphere. 5. A method for manufacturing a semiconductor device according to claim 1, wherein a surface of the crystallized semiconductor film is oxidized when the gettering is performed. 6. A method for manufacturing a semiconductor device according to claim 1, wherein the gate insulating film comprises silicon, oxygen, and nitrogen. 7. A method for manufacturing a semiconductor device according to claim 1, wherein the gate insulating film is formed by plasma CVD using silane and nitrous oxide gases. 8. A method for manufacturing a semiconductor device according to claim 1, wherein the gate insulating film is formed by plasma CVD using tetraethoxysilane and nitrous oxide gases. 9. A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is incorporated into a liquid crystal display or an electroluminescence display. 10. A method for manufacturing a semiconductor device comprising: forming a semiconductor film comprising amorphous silicon over a substrate; providing the semiconductor film with a metal containing material for promoting crystallization of the semiconductor film; crystallizing the semiconductor film by heating; irradiating the crystallized semiconductor film with ultraviolet rays or infrared rays so as to distribute the metal in the crystallized semiconductor film; removing the distributed metal from the crystallized semiconductor film by gettering after the irradiation of the ultraviolet rays or infrared rays; patterning the crystallized semiconductor film by etching to form a semiconductor island; forming a gate insulating film over the semiconductor island; forming a gate electrode over the gate insulating film; and forming source and drain regions in the semiconductor island. 11. A method for manufacturing a semiconductor device according to claim 10, wherein the patterning is performed by an isotropic dry etching method. 12. A method for manufacturing a semiconductor device according to claim 10, wherein the metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au. 13. A method for manufacturing a semiconductor device according to claim 10, wherein the gettering is performed by heating the crystallized semiconductor film in a halogen containing atmosphere. 14. A method for manufacturing a semiconductor device according to claim 10, wherein a surface of the crystallized semiconductor film is oxidized when the gettering is performed. 15. A method for manufacturing a semiconductor device according to claim 10, wherein the gate insulating film comprises silicon, oxygen, and nitrogen. 16. A method for manufacturing a semiconductor device according to claim 10, wherein the gate insulating film is formed by plasma CVD using silane and nitrous oxide gases. 17. A method for manufacturing a semiconductor device according to claim 10, wherein the gate insulating film is formed by plasma CVD using tetraethoxysilane and nitrous oxide gases. 18. A method for manufacturing a semiconductor device according to claim 10, wherein the semiconductor device is incorporated into a liquid crystal display or an electroluminescence display. 19. A method for manufacturing a semiconductor device comprising: forming a semiconductor film comprising amorphous silicon on an insulating surface; providing the semiconductor film with a metal containing material for promoting crystallization of the semiconductor film; crystallizing the semiconductor film by heating; irradiating the crystallized semiconductor film with laser light so as to distribute the metal in the crystallized semiconductor film; removing the distributed metal from the crystallized semiconductor film by gettering after the irradiation of the laser light; forming a semiconductor island having a tapered shape by patterning the crystallized semiconductor film, the tapered shape having an angle within a range of 20째 to 50째 between a side thereof and an underlying surface; forming a first gate insulating film over the semiconductor island wherein the first gate insulating film comprises silicon oxide; forming a second gate insulating film over the first gate insulating film wherein the second gate insulating film comprises silicon, oxygen, and nitrogen; forming a gate electrode over the semiconductor island with the first gate insulating film and the second gate insulating film therebetween; and forming at least a source region and a drain region in the semiconductor island. 20. A method for manufacturing a semiconductor device according to claim 19, wherein the patterning is performed by an isotropic dry etching method. 21. A method for manufacturing a semiconductor device according to claim 19, wherein the metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au. 22. A method for manufacturing a semiconductor device according to claim 19, wherein the gettering is performed by heating the crystallized semiconductor film in a halogen containing atmosphere. 23. A method for manufacturing a semiconductor device according to claim 19, wherein a surface of the crystallized semiconductor film is oxidized when the gettering is performed. 24. A method for manufacturing a semiconductor device according to claim 19, wherein the second gate insulating film is formed by plasma CVD using silane and nitrous oxide gases. 25. A method for manufacturing a semiconductor device according to claim 19, wherein the second gate insulating film is formed by plasma CVD using tetraethoxysilane and nitrous oxide gases. 26. A method for manufacturing a semiconductor device according to claim 19, wherein the semiconductor device is incorporated into a liquid crystal display or an electroluminescence display. 27. A method for manufacturing a semiconductor device comprising: forming a semiconductor film comprising amorphous silicon over a substrate; providing the semiconductor film with a metal containing material for promoting crystallization of the semiconductor film; crystallizing the semiconductor film by heating; irradiating the crystallized semiconductor film with ultraviolet rays or infrared rays so as to distribute the metal in the crystallized semiconductor film; removing the distributed metal from the crystallized semiconductor film by gettering after the irradiation of the ultraviolet rays or infrared rays; patterning the crystallized semiconductor film by etching to form a semiconductor island; forming a first gate insulating film over the semiconductor island wherein the first gate insulating film comprises silicon oxide; forming a second gate insulating film over the first gate insulating film wherein the second gate insulating film comprises silicon, oxygen, and nitrogen; forming a gate electrode over the semiconductor island with the first gate insulating film and the second gate insulating film therebetween; and forming source and drain regions in the semiconductor island. 28. A method for manufacturing a semiconductor device according to claim 27, wherein the patterning is performed by an isotropic dry etching method. 29. A method for manufacturing a semiconductor device according to claim 27, wherein the metal is selected from the group consisting of Fe, Go, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au. 30. A method for manufacturing a semiconductor device according to claim 27, wherein the gettering is performed by heating the crystallized semiconductor film in a halogen containing atmosphere. 31. A method for manufacturing a semiconductor device according to claim 27, wherein a surface of the crystallized semiconductor film is oxidized when the gettering is performed. 32. A method for manufacturing a semiconductor device according to claim 27, wherein the second gate insulating film is formed by plasma CVD using silane and nitrous oxide gases. 33. A method for manufacturing a semiconductor device according to claim 27, wherein the second gate insulating film is formed by plasma CVD using tetraethoxysilane and nitrous oxide gases. 34. A method for manufacturing a semiconductor device according to claim 27, wherein the semiconductor device is incorporated into a liquid crystal display or an electroluminescence display.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (226)
Zhang Hongyong,JPX, Active matrix device utilizing light shielding means for thin film transistors.
Ovshinsky Stanford R. (Bloomfield Hills MI) Madan Arun (Rochester MI), Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process.
Jaccodine Ralph J. (Allentown PA) Schmidt ; deceased Paul (late of Allentown PA) Schmidt ; executrix Eva (Binghamton NY), Chemically enhanced thermal oxidation and nitridation of silicon and products thereof.
Cuomo Jerome J. (Bronx NY) DiStefano Thomas H. (Bronxville NY) Rosenberg Robert (Peekskill NY), Growth of polycrystalline semiconductor film with intermetallic nucleating layer.
Oostra, Doeke J.; Ouwerling, Gerardus J. L.; Ottenheim, Jozef J. M.; Van Rooij-Mulder, Johanna M. L., Implantation method having improved material purity.
Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX), Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode.
Chiang Shang-Yi (295 La Casa Via Walnut Creek CA 94598) Moll John (4111 Old Trace Rd. Palo Alto CA 94306), Isolation of photogenerated carriers within an originating collecting region.
Liu Gang (State College PA) Kakkad Ramesh H. (State College PA) Fonash Stephen J. (State College PA), Low temperature crystallization and pattering of amorphous silicon films.
Fonash Stephen J. (State College PA) Liu Gang (Sunnyvale CA), Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates.
Mei Ping (Palo Alto CA) Boyce James B. (Los Altos CA) Johnson Richard I. (Menlo Park CA) Hack Michael G. (Mountain View CA) Lujan Rene A. (Sunnyvale CA), Low temperature process for laser dehydrogenation and crystallization of amorphous silicon.
Hongyong Zhang JP; Hideto Ohnuma JP; Yasuhiko Takemura JP, METHODOLOGY FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICES BY CRYSTALLIZING AN AMORPHOUS FILM WITH CRYSTALLIZATION PROMOTING MATERIAL, PATTERNING THE CRYSTALLIZED FILM, AND THEN INCREASING THE CRYSTAL.
Shunpei Yamazaki JP; Hongyong Zhang JP; Naoto Kusumoto JP; Yasuhiko Takemura JP, Method for crystallizing semiconductor material without exposing it to air.
Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
Hsu Sheng T. (Lawrenceville NJ), Method for forming an improved gate member utilizing special masking and oxidation to eliminate projecting points on sil.
Fan John C. C. (Chestnut Hill MA) Zeiger Herbert J. (Chestnut Hill MA), Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof.
Ohtani Hisashi (Kanagawa JPX) Adachi Hiroki (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Takayama Toru (Kanagawa JPX), Method for manufacturing a thin film transistor using catalyst elements to promote crystallization.
Gosain Dharam Pal,JPX ; Westwater Jonathan,JPX ; Usui Setsuo,JPX, Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current charact.
Funai Takashi (Tenri JPX) Makita Naoki (Nara JPX) Yamamoto Yoshitaka (Yamatokoriyama JPX) Morita Tatsuo (Soraku-gun JPX), Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallizatio.
Wong Kaiser H. (Torrance CA), Method of electrolessly depositing metals on a silicon substrate by immersing the substrate in hydrofluoric acid contain.
Zhang Hongyong (Kanagawa JPX) Teramoto Satoshi (Kanagawa JPX), Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous s.
Tasch ; Jr. Aloysious F. (Richardson TX) Penz Perry A. (Richardson TX) Pankratz John M. (Plano TX) Lam Hon W. (Dallas TX), Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereb.
Naoto Kusumoto JP; Yasuhiko Takemura JP; Hisashi Ohtani JP, Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region.
Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer.
Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX ; Teramoto Satoshi,JPX, Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bo.
Zhang Hognyong (Kanagawa JPX) Uochi Hideki (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method of removing a catalyst substance from the channel region of a TFT after crystallization.
Lesk Israel A. (Phoenix AZ) Limb Young (Austin TX) Tobin Philip J. (Austin TX) Franka John (Austin TX) Lin Paul T. (Austin TX) Dahm Jonathan C. (Austin TX) Huffman Gary L. (Austin TX) Nguyen Bich-Yen, Method of removing contaminants.
Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Yamazaki Shunpei,JPX, Process for fabricating semiconductor and process for fabricating semiconductor device.
Hsu Ting C. (Austin TX) Parker Laureen H. (Austin TX) Kolar David G. (Austin TX) Tobin Philip J. (Austin TX) Tseng Hsing-Huang (Austin TX) Garling Lisa K. (Mesa AZ) Ilderem Vida (Phoenix AZ), Process for forming field isolation and a structure over a semiconductor substrate.
Sirinyan Kirkor (Leverkusen DEX) Merten Rudolf (Leverkusen DEX) Wolf Gerhard D. (Dormagen DEX) Giesecke Henning (Cologne DEX) Claussen Uwe (Leverkusen DEX) Ebneth Harold (Leverkusen DEX), Process for the production of metallized semiconductors.
Takayama Toru (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallize.
Risch Lothar (Ottobrunn DEX) Pammer Erich (Taufkirchen DEX) Friedrich Karlheinz (Neuried DEX), Process of reducing density of fast surface states in MOS devices.
Kusumoto Naoto,JPX ; Takemura Yasuhiko,JPX ; Ohtani Hisashi,JPX, Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active.
Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device formed using a catalyst element capable of promoting crystallization.
Takemura Yasuhiko (Kanagawa JPX), Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either v.
Takemura Yasuhiko (Kanagawa JPX), Semiconductor device having transistors with different orientations of crystal channel growth with respect to current ca.
Zhang Hongyong (Yamato JPX) Takayama Toru (Yokohama JPX) Takemura Yasuhiko (Atsugi JPX) Miyanaga Akiharu (Hadano JPX), Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon fi.
Kousai Takamasa,JPX ; Makita Naoki,JPX ; Takayama Toru,JPX, Semiconductor device method for producing the same and liquid crystal display including the same.
Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Kusumoto Naoto,JPX ; Takemura Yasuhiko,JPX, Semiconductor material and method for forming the same and thin film transistor.
Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor material, a semiconductor device using the same, and a manufacturing method thereof.
Biegesen David K. (Woodside CA) Johnson Noble M. (Menlo Park CA) Bartlelink Dirk J. (Los Altos CA) Moyer Marvin D. (Cupertino CA), Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas.
Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the sa.
Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same.
Hamada Hiroki,JPX ; Hirano Kiichi,JPX ; Gouda Nobuhiro,JPX ; Abe Hisashi,JPX ; Taguchi Eiji,JPX ; Oda Nobuhiko,JPX ; Morimoto Yoshihiro,JPX, Thin film transistors for display devices having two polysilicon active layers of different thicknesses.
Doyle Brian S. (Framingham MA) Philipossian Ara (Redwood Shores CA), Threshold optimization for soi transistors through use of negative charge in the gate oxide.
Park, Byoung-Keon; Seo, Jin-Wook; Lee, Ki-Yong; Lee, Dong-Hyun; Lee, Kil-Won; Park, Jong-Ryuk; Chung, Yun-Mo; Lee, Tak-Young; So, Byung-Soo; Jeong, Min-Jae; Park, Seung-Kyu; Son, Yong-Duck; Jung, Jae-Wan, Thin film transistor, method for manufacturing the same, and display device using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.