초록 ▼

An end-effector includes multiple vortex chucks for supporting a wafer. Vortex chucks are located along the periphery of the end-effector to help prevent a flexible wafer from curling. The end-effector has limiters to restrict the lateral movement of a supported wafer. In one example, the end-effect

An end-effector includes multiple vortex chucks for supporting a wafer. Vortex chucks are located along the periphery of the end-effector to help prevent a flexible wafer from curling. The end-effector has limiters to restrict the lateral movement of a supported wafer. In one example, the end-effector has a detector for detecting the presence of a wafer. The detector is mounted at a shallow angle to allow the end-effector to be positioned close to a wafer to be picked-up, thereby allowing detection of deformed wafers contained in a wafer cassette. The shallow angle of the detector also minimizes the thickness of the end-effector. Also disclosed is a wafer station with features similar to that of the end-effector.

대표청구항 ▼

What is claimed is: 1. A method for transferring an object from a first support structure to a second support structure, wherein each of the first and second support structures comprises a plurality of vortex chucks having gas exit openings for emitting a plurality of gas vortices towards the objec

What is claimed is: 1. A method for transferring an object from a first support structure to a second support structure, wherein each of the first and second support structures comprises a plurality of vortex chucks having gas exit openings for emitting a plurality of gas vortices towards the object, the gas vortices serving to support the object while impeding contact between the structure and the object, the method comprising: activating the vortex chucks of the first support structure, and supporting the object by the vortex chucks of the first support structure in a predetermined position relative to the first support structure; positioning the first support structure so that said object is adjacent to the gas exit openings of the vortex chucks of the second support structure and is opposite to one or more of the gas exit openings of the vortex chucks of the second support structure; and transferring the object from the first support structure directly to the second support structure, wherein directly transferring the object comprises: activating the vortex chucks of the second support structure, the vortex chucks of the first and second support structures simultaneously emitting the gas vortices towards the object positioned opposite to one or more of the gas exit openings of the vortex chucks of the first support structure and opposite to one or more of the gas exit openings of the vortex chucks of the second support structure; and then deactivating the vortex chucks of the first support structure, and leaving the object supported by the second support structure; wherein each vortex chuck, when activated, lowers a pressure adjacent to a center of a chamber of the vortex chuck relative to an ambient pressure; wherein each vortex chuck comprises an inlet, and when the vortex chuck is activated, pressurized gas is fed into the inlet, follows the vortex chuck's inner wall, and exits the vortex chuck's chamber through the vortex chuck's gas exit opening to create a varying pressure differential distribution extending radially from the center of the vortex chuck. 2. The method of claim 1 wherein at least some of the vortex chucks of the first support structure are located along the periphery of the first support structure, and at least some of the vortex chucks of the second support structure are located along the periphery of the second support structure. 3. The method of claim 1 wherein said first support structure is an end-effector, and said second support structure is a wafer station. 4. The method of claim 1 wherein said first support structure is a wafer station, and said second support structure is an end-effector. 5. The method of claim 1, wherein the deactivation of the vortex chucks of the first support structure occurs abruptly. 6. The method of claim 1, wherein the activation of the vortex chucks of the second support structure occurs when the object is 0. 05" to 0.35" away from a first surface of the second support structure, wherein the second support structure's vortices are emitted from the first surface. 7. The method of claim 1 wherein the object is flexible and deformed. 8. The method of claim 7 wherein the object is a semiconductor wafer. 9. The method of claim 1 wherein the object is a semiconductor wafer. 10. The method of claim 1 wherein each said vortex chuck comprises a chamber surrounded by a wall, an inlet for conducting gas into the chamber, and an outlet for emitting a gas vortex. 11. The method of claim 10 wherein the inlet passes through the wall, and the outlet is at an end of the wall.