초록 ▼

A method for fabricating a vertical integrated circuit is disclosed. Integrated circuits are fabricated on a substrate with layers of predetermined weak and strong bond regions where deconstructed layers of integrated circuits are fabricated at or on the weak bond regions. The layers are then peeled

A method for fabricating a vertical integrated circuit is disclosed. Integrated circuits are fabricated on a substrate with layers of predetermined weak and strong bond regions where deconstructed layers of integrated circuits are fabricated at or on the weak bond regions. The layers are then peeled and subsequently bonded to produce a vertical integrated circuit. An arbitrary number of layers can be bonded and stacked in to a separate vertical integrated circuit. Also disclosed are methods of creating edge interconnects and vias through the substrate to form interconnections between layers and devices thereon.

대표청구항 ▼

What is claimed is: 1. A vertical integrated circuit comprising: a bulk substrate on a wafer; a first selectively bonded semiconductor layer vertically supported on said substrate, said bonded semiconductor layer containing weak bond regions and strong bond regions; a second selectively bonded semi

What is claimed is: 1. A vertical integrated circuit comprising: a bulk substrate on a wafer; a first selectively bonded semiconductor layer vertically supported on said substrate, said bonded semiconductor layer containing weak bond regions and strong bond regions; a second selectively bonded semiconductor layer vertically supported on said first selectively bonded semiconductor layer; wherein a semiconductor device portion is created at or on said weak bond regions, and wherein said semiconductor device portion vertically spans said first selectively bonded semiconductor layer and said second selectively bonded semiconductor layer. 2. A vertical integrated circuit formed on a die comprising: a bulk substrate on a wafer; a first selectively bonded semiconductor layer vertically supported on said substrate, said bonded semiconductor layer containing weak bond regions and strong bond regions; a second selectively bonded semiconductor layer vertically supported on said first selectively bonded semiconductor layer; wherein a semiconductor device portion is created at or on said weak bond regions; wherein said semiconductor device portion vertically spans said first selectively bonded semiconductor layer and said second selectively bonded semiconductor layer, and wherein said die is formed by dicing said bonded semiconductor layers.