Oxide sintered body, sputtering target, transparent conductive thin film and manufacturing method therefor
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01B-001/08
B32B-015/04
C23C-014/00
출원번호
US-0115971
(2005-04-27)
우선권정보
JP-2004-131476(2004-04-27)
발명자
/ 주소
Abe,Yoshiyuki
Nakayama,Tokuyuki
Ohara,Go
Wake,Riichiro
출원인 / 주소
Sumitomo Metal Mining Co., Ltd.
대리인 / 주소
Katten Muchin Rosenman LLP
인용정보
피인용 횟수 :
14인용 특허 :
0
초록▼
There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputte
There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 μm so that tungsten is at a W/In atomic number ratio of 0. 004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0. 100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 μm; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters/min per 0.1 m3 furnace volume.
대표청구항▼
What is claimed is: 1. An oxide sintered body comprising indium, tungsten and zinc, wherein tungsten is contained at a W/In atomic number ratio of 0. 004 to 0.023, zinc is contained at a Zn/In atomic number ratio of 0.004 to 0.100, and resistivity is 1 k ohm-cm or less. 2. An oxide sintered body
What is claimed is: 1. An oxide sintered body comprising indium, tungsten and zinc, wherein tungsten is contained at a W/In atomic number ratio of 0. 004 to 0.023, zinc is contained at a Zn/In atomic number ratio of 0.004 to 0.100, and resistivity is 1 k ohm-cm or less. 2. An oxide sintered body according to claim 1, wherein the resistivity is 1횞10-1 ohm-cm or less. 3. An oxide sintered body according to claim 1, wherein a bixbyite type indium oxide crystalline phase is a main phase. 4. An oxide sintered body according to claim 1, wherein essentially a tungsten oxide crystalline phase is not included. 5. An oxide sintered body according to claim 1, wherein the sintered body density is 6.2 g/cm3 or more. 6. An oxide sintered body according to claim 1, wherein the average crystalline grain size of the indium oxide crystalline phase is 10 μm or less. 7. A sputtering target wherein an oxide sintered body of claim 1 is processed into a tabular form, and attached to a cooling metal plate. 8. A sputtering target according to claim 7, wherein a maximum height Rz of the sputtering face is 3.0 μm or less. 9. An transparent conductive thin film in which an amorphous transparent conductive thin film is formed on a substrate using a sputtering target of claim 7, and the absolute value of the internal stress of the film is 1횞10 dyn/cm2 or less, and the resistivity is 9횞10-4 ohm-cm or less. 10. An oxide sintered body comprising indium, tungsten, zinc and silver, wherein tungsten is contained at a W/In atomic number ratio of 0.004 to 0.023, zinc is contained at a Zn/In atomic number ratio of 0. 004 to 0.100, silver is contained at an Ag/In atomic number ratio of 0. 001 to 0.010, and resistivity is 1 k ohm-cm or less. 11. A method of manufacturing an oxide sintered body comprising the steps of: preparing In2O3 powder with an average grain size of 1 μm or less, WO3 powder with an average grain size of 1 μm or less, and ZnO powder with an average grain size of 1 μm or less, so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the mixed powder until the average grain size is 20 to 150 μm; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2; and sintering the obtained compact at 1200 to 1500 degree.C for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of a sinter furnace at a rate of 50 to 250 liters/mm per 0.1 m3 furnace volume. 12. A method of manufacturing an oxide sintered body according to claim 11, wherein in the sintering step, the temperature is raised by 0.5 to 3 degree.C/min, and in cooling after sintering, after oxygen introduction has been stopped, the temperature is decreased by 0.1 to 1 degree.C/min to 1000 degree.C. 13. A method of manufacturing an oxide sintered body according to claim 11, wherein a reductive process is further conducted to the obtained oxide sintered body by heating under a nonoxidizing atmosphere. 14. A method of manufacturing a sputtering target comprising: processing the oxide sintered body obtained by the manufacturing method of claim 11 into a tabular form; grinding the sputtering face thereof so that the maximum height Rz is 3.0 μm or less, and then attaching the oxide sintered body to a cooling metal plate. 15. A method of manufacturing an amorphous transparent conductive thin film, wherein the amorphous transparent conductive thin film is formed on a substrate, using the sputtering target obtained by the manufacturing method of claim 14, by a sputtering method with target-substrate distance at the time of sputtering 80 to 150 mm, and under the sputtering gas pressure 0.8 to 1.5 Pa. 16. A method of manufacturing a transparent conductive thin film according to claim 15, wherein the sputtering method is a DC sputtering method. 17. A method of manufacturing a transparent conductive thin film according to claim 15, wherein a gas in which O2 gas of a specified quantity within the range of 0 to 15 vol % is mixed with pure Ar gas, is used for the sputtering gas, and the resistivity of the obtained transparent conductive thin film is 9 x 10-ohm-cm or less.
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이 특허를 인용한 특허 (14)
Miller, Steven A.; Gaydos, Mark; Shekhter, Leonid N.; Gulsoy, Gokce, Dynamic dehydriding of refractory metal powders.
Miller, Steven A.; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom.
Volchko, Scott Jeffrey; Zimmermann, Stefan; Miller, Steven A.; Stawovy, Michael Thomas, Methods of manufacturing high-strength large-area sputtering targets.
Shekhter, Leonid N.; Miller, Steven A.; Haywiser, Leah F.; Wu, Rong-Chein R., Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof.
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