Spin etcher with thickness measuring system
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IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0412120
(2003-04-11)
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우선권정보 |
KR-2002-19925(2002-04-12) |
발명자
/ 주소 |
- Kim,Chung Sik
- Bae,Jeong Yong
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
4 |
초록
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A spin etcher with a thickness measuring system includes a rotatable spin head, etchant supply means, and etchant supply controller. A substrate is mounted upon the spin head. The etchant supply means is disposed over the substrate, and sprays an etchant onto the substrate. The etchant supply cont
A spin etcher with a thickness measuring system includes a rotatable spin head, etchant supply means, and etchant supply controller. A substrate is mounted upon the spin head. The etchant supply means is disposed over the substrate, and sprays an etchant onto the substrate. The etchant supply controller controls the etchant supply. The spin etcher further includes a main controller for transferring an etchant supply stop signal to the thickness measuring system and the etchant supply controller. The thickness measuring system allows a light to impinge on a surface of the substrate, and analyzes an interference signal of the light reflected from the substrate to measure a thickness of a thin film. The main controller compares a result measured by the thickness measuring system with a reference value, and transfers the etchant supply stop signal to the etchant supply controller before the measured result reaches the reference value. During a predetermined time after the etchant supply is stopped, the thin film is etched one more time by an etchant remaining on the substrate. As a result, the thickness of the thin film reaches the reference value.
대표청구항
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We claim: 1. A spin etcher comprising: a rotatable spin head upon which a substrate is mounted; etchant supply means for spraying an etchant onto the substrate, the etchant supply means being located over the substrate; an etchant supply controller for controlling the etchant supply; a thickness me
We claim: 1. A spin etcher comprising: a rotatable spin head upon which a substrate is mounted; etchant supply means for spraying an etchant onto the substrate, the etchant supply means being located over the substrate; an etchant supply controller for controlling the etchant supply; a thickness measuring system for allowing a light to impinge on a surface of the substrate and analyzing an interference signal of light reflected from the substrate to measure a thickness of a thin film formed over the substrate; and a main controller for comparing a result measured in the thickness measuring system with a reference value; and an etchant supply stop signal generated by the main controller to stop the etchant supply controller from supplying etchant before the measured result reaches the reference value such that the etchant supply is stopped in advance of reaching a desired thickness. 2. The spin etcher as recited in claim 1, wherein the thickness measuring system includes: a plurality of optical probes for allowing a light to impinge on the substrate surface and for sensing the reflected light, the optical probes being located over the substrate; a light source unit for supplying a light of a specific wavelength to the respective optical probes; a detector for detecting the interference signal of the reflected light transmitted from the respective optical probes; and a thickness measuring controller for estimating the interference signal detected from the detector to measure a thickness and transferring data on the measured thickness to the main controller. 3. The spin etcher as recited in claim 2, wherein the light source unit is an ultraviolet lamp or a Xenon lamp. 4. The spin etcher as recited in claim 2, wherein each of the optical probes includes a plurality of light sensors for allowing a light supplied from the light source unit to impinge on the substrate surface and a plurality of a light receiving sensors for sensing reflection light reflected from the substrate. 5. The spin etcher as recited in claim 2, further comprising an optical probe folder including: an upper mounting block having an upper hole installed at a pivot of the upper mounting block and a slide groove formed at a lower side of the upper mounting block, wherein the optical probe is inserted into the upper hole; a lower mounting block having a lower hole that is coaxial with the upper hole, the lower mounting block being coupled to the lower side of the upper mounting block; a removable transparent window inserted into the slide groove; and a mounting block supporter having a light gateway communicating with the lower hole and spray means installed at an inner wall of the light gateway; wherein the lower mounting block is coupled to the mounting block supporter. 6. The spin etcher as recited in claim 5, wherein the slide groove is formed to have a tilt angle of about 1 to 5 degrees, so that the inserted transparent window is tilted with respect to the probe folder. 7. The spin etcher as recited in claim 5, wherein the spray means sprays at least one of air or nitrogen into the light gateway to form a gas curtain. 8. The spin etcher as recited in claim 1, wherein a second etch for the thin film is carried out for 10 microseconds to 2 seconds after the etchant supply is stopped. 9. The spin etcher as recited in claim 1, wherein the thickness of the thin film formed over the substrate is measured in real time. 10. The spin etcher as recited in claim 2, wherein the optical probes are installed at least about 30 cm away from the substrate surface. 11. An apparatus for determining an etching end point during etching comprising: an etchant supply controller for controlling an etchant supply onto a substrate; a measuring system for measuring a thickness of a thin film formed over the substrate in real time; and a main controller for comparing a thickness result measured by the measuring system with a reference value, wherein the main controller transfers an etchant supply stop signal to the etchant supply controller to stop the etchant supply from supplying etchant before the thickness result reaches the reference value such that the etchant supply is stopped in advance of reaching a desired thickness. 12. The apparatus as recited in claim 11, wherein the measuring system comprises: a plurality of optical probes for allowing a light to impinge on a surface of the substrate and for sensing reflected light, the optical probes being located over the substrate; a light source unit for supplying a light of a specific wavelength to the respective optical probes; a detector for detecting an interference signal of the reflected light transmitted from the respective optical probes; and a measuring controller for receiving the interference signal detected from the detector to measure the thickness of the thin film and for transferring data on the measured thickness to the main controller. 13. The apparatus as recited in claim 12, further comprising an optical probe folder within which each of the optical probes is installed, said optical probe folder including: an upper mounting block having an upper hole installed at a pivot of the upper mounting block and a slide groove formed at a lower side of the upper mounting block, wherein the optical probe is inserted into the upper hole: a lower mounting block having a lower hole that is coaxial with the upper hole and a lower part, the lower mounting block being coupled to the lower side of the upper mounting block; a removable transparent window inserted into the slide groove; and a mounting block supporter coupled to the lower part of the lower mounting block, the mounting block supporter having a light gateway communicating with the lower hole and a spray means installed at an inner wall of the light gateway. 14. The apparatus as recited in claim 13, wherein the slide groove is formed to have a tilt angle of about 1 to 5 degrees, so that the inserted transparent window is tilted with respect to the probe folder. 15. The apparatus as recited in claim 13, wherein the spray means sprays at least one of air or nitrogen into the light gateway to form a gas curtain. 16. The apparatus as recited in claim 11, wherein a second etch for the thin film is carried out for 10 microseconds to 2 seconds after the etchant supply is stopped. 17. The apparatus as recited in claim 11, wherein the thickness of the thin film formed over the substrate is measured in real time.
이 특허에 인용된 특허 (4)
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Du-Nour, Ofer, Method and apparatus for measuring lateral variations in thickness or refractive index of a transparent film on a substrate.
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Du-Nour, Ofer; Ish-Shalom, Yaron, Method and apparatus for measuring stress in semiconductor wafers.
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Muller K. Paul ; Penner Klaus Dieter,DEX, Method of end point detection using a sinusoidal interference signal for a wet etch process.
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Grieger Bernd D. ; Cummings Donald D., Sensor apparatus for process measurement.
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