Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho, Sm, Eu, Dy, Er, and Tbis excited with GaN-based compound laser diode
원문보기
A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho 3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal
A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho 3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5 I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4 F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H 13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H 9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
대표청구항▼
What is claimed is: 1. A fiber laser apparatus comprising: a GaN-based compound laser diode which emits a first laser beam; and an optical fiber which has a core doped with Sm3+, and emits a second laser beam generated by one of a first transition from 4G5/2 to 6H5/2, a second transition from 4G5/2
What is claimed is: 1. A fiber laser apparatus comprising: a GaN-based compound laser diode which emits a first laser beam; and an optical fiber which has a core doped with Sm3+, and emits a second laser beam generated by one of a first transition from 4G5/2 to 6H5/2, a second transition from 4G5/2 to 6H7/2, and a third transition from 4F3/2 to 6H11/2 when the optical fiber is excited with said first laser beam. 2. A fiber laser apparatus according to claim 1, wherein said second laser beam is generated by said first transition from 4 G5/2 to 6H5/2 and is in a wavelength range of 556 to 576 nm. 3. A fiber laser apparatus according to claim 1, wherein said second laser beam is generated by said second transition from 4 G5/2 to 6H7/2 and is in a wavelength range of 605 to 625 nm. 4. A fiber laser apparatus according to claim 1, wherein said second laser beam is generated by said third transition from 4 F3/2 to 6H11/2 and is in a wavelength range of 640 to 660 nm. 5. A fiber laser apparatus according to claim 1, wherein said core of said optical fiber is doped with no rare-earth ion other than Sm3+. 6. A fiber laser apparatus according to claim 1, wherein said GaN-based compound laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials. 7. A fiber laser amplifier comprising: a GaN-based compound laser diode which emits an excitation laser beam; and an optical fiber which has a core doped with Sm3+, and amplifies incident light which has a wavelength within a wavelength range of fluorescence generated by one of a first transition from 4G5/2 to 6H5/2, a second transition from 4G5/2 to 6H7/2, and a third transition from 4F3/2 to 6H11/2 when the optical fiber is excited with said excitation laser beam. 8. A fiber laser amplifier according to claim 7, wherein said fluorescence is generated by said first transition from 4G 5/2 to 6H5/2 and is in a wavelength range of 556 to 576 nm. 9. A fiber laser amplifier according to claim 7, wherein said fluorescence is generated by said second transition from 4G 5/2 to 6H7/2 and is in a wavelength range of 605 to 625 nm. 10. A fiber laser amplifier according to claim 7, wherein said fluorescence is generated by said third transition from 4 F3/2 to 6H11/2 and is in a wavelength range of 640 to 660 nm. 11. A fiber laser amplifier according to claim 7, wherein said core of said optical fiber is doped with no rare-earth ion other than Sm3+. 12. A fiber laser amplifier according to claim 7, wherein said GaN-based compound laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials.
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이 특허에 인용된 특허 (11)
Farries Mark C. (Northampton GB3) Morkel Paul R. (Southampton GB3) Townsend Janet E. (Hamble GB3), Glass laser.
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