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Gas distribution system with tuning gas 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/52
  • C23C-016/455
  • C23C-016/00
  • H01L-021/306
  • H01L-021/02
출원번호 US-0318612 (2002-12-13)
발명자 / 주소
  • Larson,Dean J.
  • Kadkhodayan,Babak
  • Wu,Di
  • Takeshita,Kenji
  • Yen,Bi Ming
  • Su,Xingcai
  • Denty, Jr.,William M.
  • Loewenhardt,Peter
출원인 / 주소
  • Lam Research Corporation
대리인 / 주소
    Beyer Weaver & Thomas LLP
인용정보 피인용 횟수 : 22  인용 특허 : 57

초록

An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is pr

대표청구항

What is claimed is: 1. An apparatus for providing different gases to different zones of a processing chamber, comprising: a gas supply for providing an etching gas flow; a first leg; a second leg, wherein the second leg comprises a first parallel flow; a second parallel flow; a third parallel flow;

이 특허에 인용된 특허 (57)

  1. Long Paul D. (Meridian ID) Guerricabeitia Jose J. (Boise ID), Anisotropic etch method for a sandwich structure.
  2. Bhandari Gautam ; Olander W. Karl ; Todd Michael A. ; Glassman Timothy, Apparatus and method for the in-situ generation of dopants.
  3. Hamilton Todd A., Apparatus and process for growing silicon epitaxial layer.
  4. Fan Chiko (810 El Quanito Dr. Danville CA 94526) Pearson Anthony (498 Los Pinos Way San Jose CA 95123) Chen J. James (2304 Maximilian Dr. Campbell CA 95008) White ; Jr. James L. (392 Eagle Trace Half, Apparatus for fluid delivery in chemical vapor deposition systems.
  5. Kikkawa Toshihide (Kawasaki JPX) Tanaka Hitoshi (Kawasaki JPX) Ochimizu Hirosato (Kawasaki JPX), Apparatus for generating raw material gas used in apparatus for growing thin film.
  6. Murakami Satoshi (Kawasaki JPX) Sakachi Yoichiro (Kawasaki JPX) Nishino Hironori (Kawasaki JPX) Saito Tetsuo (Kawasaki JPX) Maruyama Kenji (Kawasaki JPX), Apparatus for growing group II-VI mixed compound semiconductor.
  7. Motoda Takashi (Itami JPX) Karakida Shoichi (Itami JPX) Kaneno Nobuaki (Itami JPX) Kageyama Shigeki (Itami JPX), Apparatus for producing compound semiconductor devices.
  8. Dietz James, Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels.
  9. Noah Craig M. ; Gregg John N. ; Jackson Robert M. ; Esser Craig, Bulk chemical delivery system.
  10. Lenz Eric H., Cam-based arrangement for positioning confinement rings in a plasma processing chamber.
  11. Jackson Robert M. ; Esser Craig ; Serdahl Eric ; Gregg John N., Chemical delivery and containment system employing mobile shipping crate.
  12. John N. Gregg ; Craig M. Noah ; Robert M. Jackson, Chemical delivery system having purge system utilizing multiple purge techniques.
  13. Gomi Hideki (Tokyo JPX), Chemical vapor deposition apparatus.
  14. Motoda Takashi (c/o Mitsubishi Denki Kabushiki Kaisha Hikari Micro-ha Device Kenkyusho ; 1 Mizuhara 4-chome Itami-shi ; Hyogo 664 JPX) Karakida Shoichi (c/o Mitsubishi Denki Kabushiki Kaisha Hikari M, Container for liquid metal organic compound.
  15. Li Shijian ; Redeker Fred C. ; Ishikawa Tetsuya, Deposition chamber for improved deposition thickness uniformity.
  16. Shan Hongching (San Jose CA) Herchen Harald (Fremont CA) Welch Michael (Pleasanton CA), Distributed microwave plasma reactor for semiconductor processing.
  17. Tahara Yoshifumi (Machida JPX) Hirano Yoshihisa (Kodaira JPX) Ogasawara Masahiro (Hachioji JPX) Hasegawa Isahiro (Zushi JPX) Horioka Keiji (Kawasaki JPX) Matsushita Takaya (Yokohama JPX), Dry etching method.
  18. Wilmer Michael E., Dynamic gas flow controller.
  19. Loan James F. ; Salerno Jack P., Film processing system.
  20. Collier Nigel A. (13 Frome Close Cove ; Farnborough ; Hampshire GB2) Clements John H. (9 Krooner Rd. Camberley ; Surrey ; GV15 2AP GB2), Fluid flow apparatus and method.
  21. Goldman Jon C. (Orange CA) Rappaport Robert E. (Westminster CA), Gas control system for chemical vapor deposition system.
  22. McMillin Brian K. ; Knop Robert, Gas distribution apparatus for semiconductor processing.
  23. McMillin, Brian K.; Knop, Robert, Gas distribution apparatus for semiconductor processing.
  24. Jeong Kyung Cheol,KRX, Gas distribution system and method for chemical vapor deposition apparatus.
  25. McMillin Brian ; Nguyen Huong ; Barnes Michael ; Ni Tom, Gas injection system for plasma processing.
  26. Anderson Roger N. ; Hey Peter W. ; Carlson David K. ; Venkatesan Mahalingam ; Riley Norma, Gas inlets for wafer processing chamber.
  27. Shinozuka Shyuhei,JPX ; Miyoshi Kaori,JPX ; Fukunaga Akira,JPX ; Kobayashi Yoichi,JPX, Gas polishing apparatus and method.
  28. Ohmi Tadahiro (1-17-301 ; Komegabukuro 2-chome Aoba-ku ; Sendai-shi ; Miyagi-ken 980 JPX) Fumio Nakahara (Sendai JPX) Satoh Tuyosi (Sendai JPX) Umeda Masaru (Tokyo JPX), Gas supply piping device for a process apparatus.
  29. Fairbairn Kevin (Saratoga CA) Nowak Romuald (Cupertino CA), High density plasma CVD and etching reactor.
  30. Mori Yuzo (Osaka JPX), High-speed film forming method by microwave plasma chemical vapor deposition (CVD) under high pressure and an apparatus.
  31. Li Haojiang ; Wu Robert W., Independent gas feeds in a plasma reactor.
  32. Gauthier Scott, Liquid precursor delivery system.
  33. Fujii Takuya (Isehara JPX) Yamazaki Susumu (Hadano JPX), Metal organic chemical vapor deposition method with controlled gas flow rate.
  34. Abe Hitoshi (Tokyo) Nakamori Tomohiro (Tokyo JPX), Metalorganic chemical vapor deposition of superconducting films.
  35. Singh Vikram ; McMillin Brian ; Ni Tom ; Barnes Michael ; Yang Richard, Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing.
  36. Lull, John M.; Valentine, William S., Method and apparatus for providing a determined ratio of process fluids.
  37. Satou Akihiko (Maebashi JPX) Kusaka Tadao (Takasaki JPX) Tomiyama Shigeo (Fujioka JPX) Aoki Kouzi (Maebashi JPX) Gyobu Ichiro (Ibaragi JPX) Muramatsu Kimio (Takasaki JPX) Sakamoto Hiroaki (Takasaki J, Method for LPCVD of semiconductors using oil free vacuum pumps.
  38. Carlsen Kurt A. ; McManus James ; Dietz James, Method for sub-atmospheric gas delivery with backflow control.
  39. Brown Timothy R., Method for wide range gas flow system with real time flow measurement and correction.
  40. Carlsen Kurt A. ; McManus James ; Dietz James, Method of and system for sub-atmospheric gas delivery with backflow control.
  41. Sakai Hiroyuki (Kumamoto JPX) Yoshioka Kazutoshi (Kumamoto JPX) Matsumura Kimiharu (Kumamoto JPX) Shigaki Keisuke (Kumamoto JPX) Amemiya Yutaka (Yamanashi JPX) Iimuro Shunichi (Yamanashi JPX) Yoshiok, Method of ashing layers, and apparatus for ashing layers.
  42. Zhao Bin, Method of making a damascene metallization.
  43. Hasegawa Makoto (Kawasaki JPX) Sanda Atsuo (Yokohama JPX), Method of performing plain etching treatment and apparatus therefor.
  44. Ballance David S. ; Bierman Benjamin ; Tietz James V., Multi-zone gas flow control in a process chamber.
  45. Felts John T., Multiple source deposition plasma apparatus.
  46. Collins Kenneth S. ; Roderick Craig A. ; Trow John R. ; Yang Chan-Lon ; Wong Jerry Yuen-Kui ; Marks Jeffrey ; Keswick Peter R. ; Groechel David W. ; Pinson ; II Jay D. ; Ishikawa Tetsuya ; Lei Lawren, Plasma etch processes.
  47. Nakahigashi Takahiro (Kyoto JPX) Kuwahara Hajime (Kyoto JPX), Plasma generating apparatus and plasma processing apparatus.
  48. Suzuki Akira (Nirasaki JPX) Ishizuka Shuichi (Nirasaki JPX) Kawamura Kohei (Yamanashi JPX) Hata Jiro (Yamanashi JPX), Plasma processing apparatus using vertical gas inlets one on top of another.
  49. Hills Graham W. ; Su Yuh-Jia, Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same.
  50. Goodyear Andrew L. (Clevedon GB2) French Ian D. (Hove GB2), Plasma treatment method in electronic device manufacture.
  51. Raaijmakers Ivo J. ; Burkhart Chris W. ; Christensen David ; Susoeff Michael N., Pressure-induced shut-off valve for a liquid delivery system.
  52. Tokuda Mitsuo (Tachikawa JPX) Azuma Junzou (Yokohama JPX) Otsubo Toru (Fujisawa JPX) Yamaguchi Yasuhiro (Chigasaki JPX) Sasaki Ichirou (Yokohama JPX), Processing apparatus and method for plasma processing.
  53. Benkowski Robert J. ; Lynch Bryan E., Pulsatile flow system and method.
  54. Hoke William E. (Wayland MA) Pan Noren (Nashua NH) Carter James R. (North Grafton MA), Reactor vessel for the growth of heterojunction devices.
  55. Gottscho, Richard A.; Steger, Robert J., Switched uniformity control.
  56. Swartz, Dennis C., Vacuum processing chamber with controlled gas supply valve.
  57. Sivaramakrishnan Visweswaren ; White John M., Vaporizing reactant liquids for chemical vapor deposition film processing.

이 특허를 인용한 특허 (22)

  1. Wong, Harry P.; Wong, Vernon; Griffin, Christopher Charles; Taskar, Mark, Alternate gas delivery and evacuation system for plasma processing apparatuses.
  2. Nishino, Kouji; Dohi, Ryousuke; Nagase, Masaaki; Hirata, Kaoru; Sugita, Katsuyuki; Ikeda, Nobukazu, Gas supply system for semiconductor manufacturing facilities.
  3. Mizusawa, Kenetsu; Ito, Keiki; Itoh, Masahide, Gas supply unit, substrate processing apparatus and supply gas setting method.
  4. Mizusawa, Kenetsu; Ito, Keiki; Itoh, Masahide, Gas supply unit, substrate processing apparatus and supply gas setting method.
  5. Larson, Dean J., Gas switching section including valves having different flow coefficients for gas distribution system.
  6. Larson, Dean J., Gas switching section including valves having different flow coefficients for gas distribution system.
  7. Lull,John M.; Valentine,William S., Method and apparatus for providing a determined ratio of process fluids.
  8. Annapragada, Rao V.; Turmel, Odette; Takeshita, Kenji; Zheng, Lily; Choi, Thomas S.; Pirkle, David R., Method for providing uniform removal of organic material.
  9. Bauer, Matthias; Bartlett, Gregory M, Methods and apparatus for a gas panel with constant gas flow.
  10. Shareef, Iqbal A.; Tietz, James V.; Wong, Vernon; Meinecke, Richard J., Methods for delivering a process gas.
  11. Shareef, Iqbal A.; Tietz, James V.; Wong, Vernon; Meinecke, Richard J., Methods for performing actual flow verification.
  12. Shareef, Iqbal A.; Tietz, James V.; Wong, Vernon; Meinecke, Richard J., Methods for performing transient flow prediction and verification using discharge coefficients.
  13. Larson, Dean J.; Hefty, Robert C.; Tietz, James V.; Kennedy, William S.; Lenz, Eric H.; Denty, Jr., William M.; Magni, Enrico, Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber.
  14. Kiehlbauch, Mark, Plasma processing with preionized and predissociated tuning gases and associated systems and methods.
  15. Kiehlbauch, Mark, Plasma processing with preionized and predissociated tuning gases and associated systems and methods.
  16. Panagopoulos, Theo, Rapid and uniform gas switching for a plasma etch process.
  17. Panagopoulos, Theo, Rapid and uniform gas switching for a plasma etch process.
  18. Miller, Matthew W.; Basceri, Cem, Reactors, systems and methods for depositing thin films onto microfeature workpieces.
  19. Shareef, Iqbal; Agarwal, Piyush; Spyropoulos, Evangelos; Taskar, Mark, Shared gas panels in plasma processing chambers employing multi-zone gas feeds.
  20. Vu, Kim Ngoc, Ultra-seal gasket for joining high purity fluid pathways.
  21. Vu, Kim Ngoc, Ultra-seal gasket for joining high purity fluid pathways.
  22. Larson, Dean J.; Kadkhodayan, Babak; Wu, Di; Takeshita, Kenji; Yen, Bi-Ming; Su, Xingcai; Denty, Jr., William M.; Loewenhardt, Peter, Uniform etch system.
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