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Process for production of SOI substrate and process for production of semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/76
  • H01L-029/66
  • H01L-029/94
  • H01L-031/62
  • H01L-031/113
  • H01L-031/101
  • H01L-031/119
  • H01L-031/115
출원번호 US-0075687 (2005-03-10)
우선권정보 JP-10-214125(1998-07-29)
발명자 / 주소
  • Fukunaga,Takeshi
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Nixon Peabody LLP
인용정보 피인용 횟수 : 102  인용 특허 : 29

초록

초록이 없습니다.

대표청구항

대표청구항이 없습니다.

이 특허에 인용된 특허 (29)

  1. Kazuaki Ohmi JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Composite member its separation method and preparation method of semiconductor substrate by utilization thereof.
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  2. Yamamoto Mitsuyoshi,JPX ; Kawasaki Ikuya,JPX ; Inayoshi Hideo,JPX ; Narita Susumu,JPX ; Kubo Masaharu,JPX, Data processor and single-chip microcomputer with changing clock frequency and operating voltage.
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  3. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Fabrication process for a semiconductor substrate.
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  4. Blake Terence G. W. (Dallas TX) Lu Hsindao (Dallas TX), High performance silicon-on-insulator transistor with body node to source node connection.
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  5. Miyazawa Yoshihiro (Kanagawa JPX) Minami Eric (Tokyo JPX) Matsushita Takeshi (Kanagawa JPX), MIS semiconductor device formed by utilizing SOI substrate having a semiconductor thin film formed on a substrate throug.
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  6. Klein Dean A., Memory controller with buffered CAS/RAS external synchronization capability for reducing the effects of clock-to-signal skew.
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  7. Sato Nobuhiko,JPX, Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same.
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  8. Hwang Jeong-Mo (Plano TX), Method for forming a silicon on insulator device.
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  9. Hsu Ching-Hsiang (Hsin Chu TWX) Wong Shyh-Chyi (Taichang TWX) Liang Mong-Song (Hsinchu TWX) Chung Steve S. (Hsinchu TWX), Method of making a body contact for a MOSFET device fabricated in an SOI layer.
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  10. Houston Theodore W. (Richardson TX), Method of making extended body contact for semiconductor over insulator transistor.
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  11. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.
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  12. Hamajima Tomohiro,JPX ; Kikuchi Hiroaki,JPX, Method of producing bonded substrate with silicon-on-insulator structure.
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  13. Nishida Shoji,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX ; Iwane Masaaki,JPX, Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor.
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  14. Fukunaga Takeshi,JPX, Process for production of SOI substrate and process for production of semiconductor device.
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  15. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
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  16. Bruel Michel,FRX, Process for the manufacture of thin films of semiconductor material.
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  17. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
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  18. Shunpei Yamazaki JP; Takeshi Fukunaga JP, Semiconductor device.
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  19. Yamazaki Shunpei,JPX ; Fukunaga Takeshi,JPX, Semiconductor device.
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  20. Yamazaki, Shunpei; Fukunaga, Takeshi, Semiconductor device.
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  21. Yamaguchi Yasuo (Hyogo JPX) Ajika Natsuo (Hyogo JPX) Yamano Tsuyoshi (Hyogo JPX), Semiconductor device and a method of manufacturing thereof.
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  22. Konuma Toshimitsu,JPX ; Sugawara Akira,JPX ; Uehara Yukiko,JPX ; Zhang Hongyong,JPX ; Suzuki Atsunori,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Suzawa Hideomi,JPX ; Uochi Hideki,JPX ; Takemura, Semiconductor device and method for manufacturing the same.
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  23. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  24. Hongyong Zhang JP; Akira Takenouchi JP; Hideomi Suzawa JP, Semiconductor integrated circuit and method for forming the same.
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  25. Hongyong Zhang JP; Akira Takenouchi JP; Hideomi Suzawa JP, Semiconductor integrated circuit and method for forming the same.
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  26. Noda Hiromasa,JPX ; Aoki Masakazu,JPX ; Idei Youji,JPX ; Kajigaya Kazuhiko,JPX ; Nagashima Osamu,JPX ; Itoh Kiyoo,JPX ; Horiguchi Masashi,JPX ; Sakata Takeshi,JPX, Semiconductor integrated circuit device and method of activating the same.
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  27. Yonehara Takao (Atsugi JPX), Semiconductor member and process for preparing semiconductor member.
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  28. Matloubian Mishel (Dallas TX), Sidewall channel stop process.
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  29. Srikrishnan Kris V., Smart-cut process for the production of thin semiconductor material films.
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이 특허를 인용한 특허 (102)

  1. Yamazaki, Shunpei, Display device, method for manufacturing display device, and SOI substrate.
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  2. Yamazaki, Shunpei, Display device, method for manufacturing display device, and SOI substrate.
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  3. Yamazaki, Shunpei, Heat treatment apparatus and method for manufacturing SOI substrate using the heat treatment apparatus.
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  4. Ohnuma, Hideto, Manufacturing method of SOI substrate.
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  5. Ohnuma, Hideto; Kakehata, Tetsuya; Shimomura, Akihisa; Sasagawa, Shinya; Kurata, Motomu, Manufacturing method of SOI substrate.
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  6. Sekiguchi, Keiichi; Hanaoka, Kazuya; Ito, Daigo, Manufacturing method of SOI substrate.
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  7. Miyairi, Hidekazu; Shimomura, Akihisa; Mizoi, Tatsuya; Higa, Eiji; Nagano, Yoji, Manufacturing method of SOI substrate and manufacturing method of semiconductor device.
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  8. Miyairi, Hidekazu; Shimomura, Akihisa; Mizoi, Tatsuya; Higa, Eiji; Nagano, Yoji, Manufacturing method of SOI substrate and manufacturing method of semiconductor device.
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  9. Miyairi, Hidekazu; Shimomura, Akihisa; Mizoi, Tatsuya; Higa, Eiji; Nagano, Yoji, Manufacturing method of SOI substrate and manufacturing method of semiconductor device.
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  10. Shimomura, Akihisa; Miyairi, Hidekazu; Sato, Yurika, Manufacturing method of SOI substrate and manufacturing method of semiconductor device.
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  11. Godo, Hiromichi, Manufacturing method of a semiconductor device including a single crystal semiconductor film, and a semiconductor film including impurity.
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  12. Murakami, Satoshi; Godo, Hiromichi; Isobe, Atsuo, Manufacturing method of a semiconductor substrate using a damaged region.
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  13. Yamazaki, Shunpei; Shichi, Takeshi; Suzuki, Naoki, Manufacturing method of semiconductor device.
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  14. Yamazaki, Shunpei; Shichi, Takeshi; Suzuki, Naoki, Manufacturing method of semiconductor device.
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  15. Ohnuma, Hideto; Yamazaki, Shunpei, Manufacturing method of semiconductor device, semiconductor device, and electronic device.
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  16. Tanaka, Koichiro, Manufacturing method of semiconductor substrate.
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  17. Yamazaki, Shunpei, Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device.
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  18. Ohnuma, Hideto, Manufacturing methods of semiconductor substrate, thin film transistor and semiconductor device.
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  19. Ikeda, Hisao; Ibe, Takahiro; Koezuka, Junichi; Kato, Kaoru, Memory device and semiconductor device.
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  20. Komatsu, Yoshihiro; Moriwaka, Tomoaki; Takahashi, Kojiro, Method for forming SOI substrate and apparatus for forming the same.
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  21. Ohnuma, Hideto; Shingu, Takashi; Kakehata, Tetsuya; Kuriki, Kazutaka; Yamazaki, Shunpei, Method for manufacturing SOI substrate.
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  22. Ohnuma, Hideto; Yamazaki, Shunpei, Method for manufacturing SOI substrate.
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  23. Shimomura, Akihisa; Tokunaga, Hajime, Method for manufacturing SOI substrate.
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  24. Suzawa, Hideomi; Sasagawa, Shinya; Shimomura, Akihisa; Momo, Junpei; Kurata, Motomu; Muraoka, Taiga; Nei, Kosei, Method for manufacturing SOI substrate.
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  25. Suzawa, Hideomi; Sasagawa, Shinya; Shimomura, Akihisa; Momo, Junpei; Kurata, Motomu; Muraoka, Taiga; Nei, Kosei, Method for manufacturing SOI substrate.
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  26. Yamazaki, Shunpei, Method for manufacturing SOI substrate.
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  27. Yamazaki, Shunpei; Ohnuma, Hideto, Method for manufacturing SOI substrate and method for manufacturing semiconductor device.
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  28. Yamazaki, Shunpei; Ohnuma, Hideto; Iikubo, Yoichi; Yamamoto, Yoshiaki; Makino, Kenichiro, Method for manufacturing SOI substrate and semiconductor device.
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  29. Ohnuma, Hideto; Yamazaki, Shunpei, Method for manufacturing SOI substrate using cluster ion.
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  30. Shimomura, Akihisa; Tsukamoto, Naoki, Method for manufacturing a semiconductor substrate by laser irradiation.
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  31. Ikeda, Hisao; Ibe, Takahiro; Koezuka, Junichi; Kato, Kaoru, Method for manufacturing memory device.
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  32. Kato, Sho; Isaka, Fumito; Kakehata, Tetsuya; Godo, Hiromichi; Shimomura, Akihisa, Method for manufacturing semiconductor device.
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  33. Kato, Sho; Isaka, Fumito; Kakehata, Tetsuya; Godo, Hiromichi; Shimomura, Akihisa, Method for manufacturing semiconductor device.
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  34. Yamazaki, Shunpei; Momo, Junpei; Isaka, Fumito; Higa, Eiji; Koyama, Masaki; Shimomura, Akihisa, Method for manufacturing semiconductor device.
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  35. Kakehata, Tetsuya; Kuriki, Kazutaka, Method for manufacturing semiconductor substrate.
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  36. Moriwaka, Tomoaki, Method for manufacturing semiconductor substrate.
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  37. Nei, Kosei; Shimomura, Akihisa, Method for manufacturing semiconductor substrate.
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  38. Yamazaki, Shunpei, Method for manufacturing semiconductor substrate.
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  39. Yamazaki, Shunpei; Miyanaga, Akiharu; Inada, Ko; Iwaki, Yuji, Method for manufacturing semiconductor wafer.
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  40. Yamazaki, Shunpei; Miyanaga, Akiharu; Inada, Ko; Iwaki, Yuji, Method for manufacturing semiconductor wafer.
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  41. Yamazaki, Shunpei, Method for manufacturing substrate of semiconductor device.
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  42. Hanaoka, Kazuya; Kimura, Shunsuke, Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate.
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  43. Imahayashi, Ryota; Ohnuma, Hideto, Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate.
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  44. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  45. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  46. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  47. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  48. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  49. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  50. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
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  51. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
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  52. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
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  53. Hanaoka, Kazuya; Tsuya, Hideki; Nagai, Masaharu, Method of manufacturing SOI substrate.
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  54. Hanaoka, Kazuya; Tsuya, Hideki; Nagai, Masaharu, Method of manufacturing SOI substrate.
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  55. Yamazaki, Shunpei; Higa, Eiji; Nagano, Yoji; Mizoi, Tatsuya; Shimomura, Akihisa, Method of manufacturing SOI substrate.
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  56. Yamazaki, Shunpei; Higa, Eiji; Nagano, Yoji; Mizoi, Tatsuya; Shimomura, Akihisa, Method of manufacturing SOI substrate.
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  57. Yamazaki, Shunpei; Ohnuma, Hideto, Method of manufacturing SOI substrate and method of manufacturing semiconductor device.
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  58. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
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  59. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
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  60. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
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  61. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
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  62. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
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  63. Yamazaki, Shunpei, Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxide insulating layer.
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  64. Yamazaki, Shunpei, Method of manufacturing a semiconductor device including thermal oxidation to form an insulating film.
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  65. Ohnuma, Hideto; Iikubo, Yoichi; Yamazaki, Shunpei, Method of manufacturing semiconductor device.
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  66. Shimomura, Akihisa; Miyairi, Hidekazu, Method of manufacturing semiconductor device.
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  67. Yamazaki, Shunpei, Method of manufacturing semiconductor device having island-like single crystal semiconductor layer.
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  70. Kato, Sho; Hiura, Yoshikazu; Shimomura, Akihisa; Ohtsuki, Takashi; Toriumi, Satoshi; Arai, Yasuyuki, Photoelectric conversion device and manufacturing method thereof.
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  71. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
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  72. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer.
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  73. Ohnuma, Hideto; Hanaoka, Kazuya, Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of SOI substrate.
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  74. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.
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  76. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.
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  77. Yamazaki, Shunpei; Ohnuma, Hideto, SOI substrate and method for manufacturing SOI substrate.
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  78. Yamazaki, Shunpei; Togawa, Maki; Arai, Yasuyuki, SOI substrate and method for manufacturing SOI substrate.
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  79. Yamazaki, Shunpei; Togawa, Maki; Arai, Yasuyuki, SOI substrate and method for manufacturing SOI substrate.
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  80. Ohnuma, Hideto; Kakehata, Tetsuya; Iikubo, Yoichi, SOI substrate, method for manufacturing the same, and semiconductor device.
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  81. Ohnuma, Hideto; Kakehata, Tetsuya; Iikubo, Yoichi, SOI substrate, method for manufacturing the same, and semiconductor device.
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  82. Ohnuma, Hideto; Kakehata, Tetsuya; Iikubo, Yoichi, SOI substrate, method for manufacturing the same, and semiconductor device.
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  83. Yamazaki, Shunpei, Semiconductor device.
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  87. Isobe, Atsuo, Semiconductor device and method for manufacturing the same.
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  88. Ohnuma, Hideto; Nomura, Noritsugu, Semiconductor device and method for manufacturing the same.
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  89. Yamazaki, Shunpei; Koezuka, Junichi; Kakehata, Tetsuya, Semiconductor device and method for manufacturing the same.
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  90. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Semiconductor device having buried oxide film.
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  92. Kimura, Hajime, Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer.
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  93. Kakehata, Tetsuya, Semiconductor device, electronic device and method for manufacturing semiconductor device.
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  94. Yamazaki, Shunpei; Miyairi, Hidekazu, Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device.
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  95. Kakehata, Tetsuya, Semiconductor substrate and method for manufacturing the same.
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  96. Kakehata, Tetsuya, Semiconductor substrate and method for manufacturing the same.
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  97. Koyama, Masaki; Isaka, Fumito; Shimomura, Akihisa; Momo, Junpei, Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device.
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  98. Koyama, Masaki; Isaka, Fumito; Shimomura, Akihisa; Momo, Junpei, Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device.
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  99. Kakehata, Tetsuya; Kuriki, Kazutaka, Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device.
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  100. Yamazaki, Shunpei, Semiconductor substrate, semiconductor device and manufacturing method thereof.
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