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Glass-based SOI structures 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/786
  • H01L-029/66
출원번호 US-0779582 (2004-02-12)
발명자 / 주소
  • Couillard,James G.
  • Gadkaree,Kishor P.
  • Mach,Joseph F.
출원인 / 주소
  • Corning Incorporated
인용정보 피인용 횟수 : 67  인용 특허 : 25

초록

초록이 없습니다.

대표청구항

대표청구항이 없습니다.

이 특허에 인용된 특허 (25)

  1. Francis Gaylord L. (Painted Post NY), Composite article and method.
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  2. Fitzgerald Eugene A., Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization.
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  3. Horne William E. (Bellevue WA), Electro-optically assisted bonding.
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  4. Kub Francis J. ; Hobart Karl D., Fabrication ultra-thin bonded semiconductor layers.
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  5. Stewart, Robert E., Field-assisted fusion bonding.
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  6. Spangler Leland J. (1974 Traver Rd. ; Apt. No. 208 Ann Arbor MI 48105) Wise Kensall D. (3670 Charter Pl. Ann Arbor MI 48105), Fully integrated single-crystal silicon-on-insulator process, sensors and circuits.
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  7. Nathan W. Cheung ; Francois J. Henley, Generic layer transfer methodology by controlled cleavage process.
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  8. Miyazaki, Seiji, Glass for anodic bonding.
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  9. Chacon Lisa C. ; Ellison Adam J. G. ; Hares George B. ; Kohli Jeffrey T. ; Lapp Josef C. ; Morena Robert, Glasses for flat panel displays.
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  10. Bruel Michel (Veurey FRX), Method for placing semiconductive plates on a support.
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  11. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
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  12. Goesele Ulrich M. ; Tong Qin-Yi, Method for the transfer of thin layers monocrystalline material onto a desirable substrate.
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  13. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of fabricating a high reliable SOI substrate.
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  14. Forbes Leonard, Methods for making silicon-on-insulator structures.
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  15. Walker, Tobias W.; McKnight, Douglas J.; Roselle, Paul L.; Tilton, Mary; Ahling, Jay, Micro liquid crystal displays.
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  16. Iwane Masaaki,JPX ; Yonehara Takao,JPX ; Ohmi Kazuaki,JPX, Process for forming an SOI substrate.
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  17. Cheng, Zhi-Yuan; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; Hoyt, Judy L., Process for producing semiconductor article using graded epitaxial growth.
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  18. Egloff Richard, Process for production of thin layers of semiconductor material.
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  19. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
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  20. Fitzergald, Eugene A., Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits.
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  21. Henley Francois J. ; Cheung Nathan W., Reusable substrate for thin film separation.
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  22. Brasen Daniel (Lake Hiawatha NJ) Fitzgerald ; Jr. Eugene A. (Bridgewater NJ) Green Martin L. (New Providence NJ) Monroe Donald P. (Berkeley Heights NJ) Silverman Paul J. (Millburn NJ) Xie Ya-Hong (Fl, Semiconductor heterostructure devices with strained semiconductor layers.
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  23. Ohshima Hisayoshi,JPX ; Matsui Masaki,JPX ; Onoda Kunihiro,JPX ; Yamauchi Shoichi,JPX, Semiconductor substrate manufacturing method.
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  24. Ogura Atsushi,JPX, Silicon-on-insulator (SOI) substrate and method of fabricating the same.
    상세보기
  25. Henley Francois J. ; Cheung Nathan W., Silicon-on-silicon hybrid wafer assembly.
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이 특허를 인용한 특허 (67)

  1. Tredwell, Timothy J., Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates.
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  2. Tredwell, Timothy J., Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates.
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  3. Tredwell, Timothy J.; Lai, Jackson, Digital radiographic flat-panel imaging array with dual height semiconductor and method of making same.
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  4. Tredwell, Timothy J., Digital radiography imager with buried interconnect layer in silicon-on-glass and method of fabricating same.
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  5. Yoshida, Yasunori; Shimomura, Akihisa; Sato, Yurika, Display device and method for manufacturing the same.
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  6. Yamazaki, Shunpei, Display device, method for manufacturing display device, and SOI substrate.
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  7. Yamazaki, Shunpei, Display device, method for manufacturing display device, and SOI substrate.
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  8. Coursey, Belford T.; Gealy, F. Daniel; Beck, George E., Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods.
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  9. Coursey, Belford T.; Gealy, F. Daniel; Beck, George E., Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods.
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  10. Gross, Timothy Michael; Hu, Guangli; Roussev, Rostislav Vatchev; Smith, Charlene Marie; Tang, Zhongzhi; Tietje, Steven Alvin, Fusion formable glass-based articles including a metal oxide concentration gradient.
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  11. Bhat, Rajaram; Gadkaree, Kishor Purushottam; Napierala, Jerome; Pinckney, Linda Ruth; Zah, Chung-En, Gallium nitride semiconductor device on SOI and process for making same.
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  12. DeMartino, Steven Edward; Fabian, Michelle Dawn; Kohli, Jeffrey Todd; Lyon, Jennifer Lynn; Smith, Charlene Marie; Tang, Zhongzhi, Glass articles exhibiting improved fracture performance.
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  13. DeMartino, Steven Edward; Fabian, Michelle Dawn; Kohli, Jeffrey Todd; Lyon, Jennifer Lynn; Smith, Charlene Marie; Tang, Zhongzhi, Glass articles exhibiting improved fracture performance.
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  14. Dejneka, Matthew John; Gomez, Sinue; Hu, Guangli; Smith, Charlene Marie; Tang, Zhongzhi; Tietje, Steven Alvin, Glass-based articles including a metal oxide concentration gradient.
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  15. Daigler, Christopher Paul; Gadkaree, Kishor Purushottam; Mach, Joseph Frank; Tietje, Steven Alvin, Glass-ceramic-based semiconductor-on-insulator structures and method for making the same.
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  16. Hu, Guangli; Smith, Charlene Marie; Tang, Zhongzhi; Tietje, Steven Alvin, Glasses and glass ceramics including a metal oxide concentration gradient.
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  17. Hu, Guangli; Smith, Charlene Marie; Tang, Zhongzhi; Tietje, Steven Alvin, Glasses and glass ceramics including a metal oxide concentration gradient.
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  18. Aitken,Bruce Gardiner; Dejneka,Matthew John; Gadkaree,Kishor Purushottam; Pinckney,Linda Ruth, High strain glass/glass-ceramic containing semiconductor-on-insulator structures.
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  19. Nishimoto, Michael Yoshiya; Lock, William Edward, High temperature sheet handling system and methods.
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  20. Tredwell, Timothy J.; Lai, Jackson, Imaging array with dual height semiconductor and method of making same.
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  21. Shimomura, Akihisa; Mizoi, Tatsuya; Miyairi, Hidekazu; Tanaka, Koichiro, Layer transfer process for semiconductor device.
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  22. Yamazaki, Shunpei, Light-emitting device.
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  23. Yamazaki, Shunpei, Light-emitting device including color filter and black matrix.
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  24. Sekiguchi, Keiichi; Hanaoka, Kazuya; Ito, Daigo, Manufacturing method of SOI substrate.
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  25. Tanaka, Koichiro, Manufacturing method of semiconductor substrate.
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  26. Moriwaka, Tomoaki, Manufacturing methods of SOI substrate and semiconductor device.
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  27. Chang, Chester Hann Huei; Moore, Michael John; Nishimoto, Michael Yoshiya; Zhang, Chunhe, Material sheet handling system and processing methods.
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  28. Eisenstock, Gregory; Jain, Anurag, Method and apparatus for conformable polishing.
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  29. Komatsu, Yoshihiro; Moriwaka, Tomoaki; Takahashi, Kojiro, Method for forming SOI substrate and apparatus for forming the same.
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  30. Shimomura, Akihisa; Tokunaga, Hajime, Method for manufacturing SOI substrate.
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  31. Yamazaki, Shunpei; Kawamata, Ikuko; Arai, Yasuyuki, Method for manufacturing semiconductor device.
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  32. Kerdiles, Sebastien; Delprat, Daniel, Method for molecular bonding of silicon and glass substrates.
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  33. Kerdiles, Sébastien; Delprat, Daniel, Method for molecular bonding of silicon and glass substrates.
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  34. Kawai, Makoto; Tobisaka, Yuji; Akiyama, Shoji, Method for producing bonded wafer.
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  35. Delprat, Daniel; Duret, Carine; Ben-Mohamed, Nadia; Lallement, Fabrice, Method for reducing irregularities at the surface of a layer transferred from a source substrate to a glass-based support substrate.
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  36. Ladru, Francis-Jurjen; Siebert, Bernhard, Method for testing a thermography apparatus, designed for carrying out a thermography method, for its correct operation, test component therefor and method for its production.
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  37. Bankaitis, Jonas; Moore, Michael John; Stone, Jeffery Scott; Williamson, Paul Jeffrey; Zhang, Chunhe, Methods and apparatus for edge chamfering of semiconductor wafers using chemical mechanical polishing.
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  38. Cady, Raymond Charles; Moore, Michael John; Shalkey, Mark Alex; Stocker, Mark Andrew, Methods and apparatus for forming a slurry polishing pad.
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  39. Cherekdjian, Sarko; Cites, Jeffrey Scott; Couillard, James Gregory; Maschmeyer, Richard Orr; Moore, Michael John; Usenko, Alex, Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation.
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  40. Cherekdjian, Sarko; Cites, Jeffrey Scott; Couillard, James Gregory; Maschmeyer, Richard Orr; Moore, Michael John; Usenko, Alex, Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation.
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  41. Cherekdjian, Sarko; Cites, Jeffrey Scott; Couillard, James Gregory; Maschmeyer, Richard Orr; Moore, Michael John; Usenko, Alex, Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation.
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  42. Cherekdjian, Sarko; Cites, Jeffrey Scott; Couillard, James Gregory; Maschmeyer, Richard Orr; Moore, Michael John; Usenko, Alex, Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation.
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  43. Gadkaree, Kishor Purushottam, Methods of fabricating glass-based substrates and apparatus employing same.
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  44. Chuang, Ta Ko; Usenko, Alex, Oxygen plasma conversion process for preparing a surface for bonding.
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  45. Cady, Raymond Charles; Moore, Michael John; Shalkey, Mark Alex; Stocker, Mark Andrew, Polishing pad for polishing semiconductor surfaces.
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  46. Mohamed, Nadia Ben; Chuang, Ta-Ko; Cites, Jeffrey Scott; Delprat, Daniel; Usenko, Alex, Process of making semiconductor on glass substrates with a stiffening layer.
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  47. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.
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  48. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.
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  49. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.
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  50. Yamazaki, Shunpei; Ohnuma, Hideto, SOI substrate and method for manufacturing SOI substrate.
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  51. Yamazaki, Shunpei; Togawa, Maki; Arai, Yasuyuki, SOI substrate and method for manufacturing SOI substrate.
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  52. Yamazaki, Shunpei; Togawa, Maki; Arai, Yasuyuki, SOI substrate and method for manufacturing SOI substrate.
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  53. Ohnuma, Hideto; Kakehata, Tetsuya; Iikubo, Yoichi, SOI substrate, method for manufacturing the same, and semiconductor device.
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  54. Ohnuma, Hideto; Kakehata, Tetsuya; Iikubo, Yoichi, SOI substrate, method for manufacturing the same, and semiconductor device.
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  55. Ohnuma, Hideto; Kakehata, Tetsuya; Iikubo, Yoichi, SOI substrate, method for manufacturing the same, and semiconductor device.
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  56. Gadkaree, Kishor Purushottam; Moore, Michael John; Stocker, Mark Andrew; Feng, Jiangwei; Mach, Joseph Frank, Semiconductor on glass insulator made using improved thinning process.
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  57. Couillard,James Gregory; Gadkaree,Kishor Purushottam, Semiconductor on glass insulator with deposited barrier layer.
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  58. Mohamed, Nadia Ben; Chuang, Ta-ko; Cites, Jeffrey Scott; Delprat, Daniel; Usenko, Alexander, Semiconductor on glass substrate with stiffening layer.
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  59. Mohamed, Nadia Ben; Chuang, Ta Ko; Cites, Jeffrey Scott; Delprat, Daniel; Usenko, Alex, Semiconductor on glass substrate with stiffening layer and process of making the same.
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  60. Couillard, James Gregory, Semiconductor on insulator and methods of forming same using temperature gradient in an anodic bonding process.
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  61. Cherekdjian, Sarko, Semiconductor structure made using improved multiple ion implantation process.
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  62. Cherekdjian, Sarko, Semiconductor structure made using improved multiple ion implantation process.
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  63. Cherekdjian, Sarko, Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process.
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  64. Cherekdjian, Sarko, Semiconductor structure made using improved simultaneous multiple ion implantation process.
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  65. Bankaitis, Jonas; Moore, Michael John, Semiconductor wafer re-use using chemical mechanical polishing.
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  66. Kerdiles, Sébastien; Maleville, Christophe; Letertre, Fabrice; Rayssac, Olivier, Transfer method with a treatment of a surface to be bonded.
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  67. Kerdiles, Sébastien; Maleville, Christophe; Letertre, Fabrice; Rayssac, Olivier, Transfer method with a treatment of a surface to be bonded.
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