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Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0871380 (2004-06-21)
우선권정보 JP-11-229518(1999-08-13); JP-11-250940(1999-09-03)
발명자 / 주소
  • Yamazaki,Shunpei
  • Ohtani,Hisashi
  • Tanaka,Koichiro
  • Kasahara,Kenji
  • Kawasaki,Ritsuko
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson Intellectual Property Law Office, P.C.
인용정보 피인용 횟수 : 16  인용 특허 : 49

초록

초록이 없습니다.

대표청구항

대표청구항이 없습니다.

이 특허에 인용된 특허 (49)

  1. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Apparatus and method for laser radiation.
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  2. Fork David K. ; Boyce James B. ; Mei Ping ; Ready Steve ; Johnson Richard I. ; Anderson Greg B., Buffered substrate for semiconductor devices.
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  3. Yamazaki, Shunpei; Ohtani, Hisashi; Tanaka, Koichiro; Kasahara, Kenji; Kawasaki, Ritsuko, Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device.
    상세보기
  4. Yamazaki, Shunpei; Ohtani, Hisashi; Tanaka, Koichiro; Kasahara, Kenji; Kawasaki, Ritsuko, Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device.
    상세보기
  5. Minemoto Hisashi (Otsu JPX) Ozaki Yusuke (Toyonaka JPX) Sonoda Nobuo (Settsu JPX), Laser device.
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  6. Tanaka Koichiro,JPX, Laser illumination method.
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  7. Yamazaki Shunpei,JPX ; Tanaka Koichiro,JPX ; Kusumoto Naoto,JPX, Laser irradiation apparatus.
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  8. Yamazaki Shunpei,JPX ; Tanaka Koichiro,JPX ; Teramoto Satoshi,JPX, Laser irradiation apparatus.
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  9. Smart Donald V., Laser processing.
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  10. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Ishihara Hiroaki,JPX, Laser processing apparatus.
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  11. Ishihara Hiroaki,JPX ; Nakashita Kazuhisa,JPX ; Ohnuma Hideto,JPX ; Tanaka Nobuhiro,JPX ; Adachi Hiroki,JPX, Laser processing apparatus and laser processing process.
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  12. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Ishihara Hiroaki,JPX, Laser processing apparatus having beam expander.
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  13. Ishihara Hiroaki (Kanagawa JPX) Nakashita Kazuhisa (Kanagawa JPX) Ohnuma Hideto (Kanagawa JPX) Tanaka Nobuhiro (Kanagawa JPX) Adachi Hiroki (Kanagawa JPX), Laser processing method and alignment.
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  14. Shunpei Yamazaki JP; Satoshi Teramoto JP; Naoto Kusumoto JP; Takeshi Fukunaga JP; Setsuo Nakajima JP; Tadayoshi Miyamoto JP; Atsushi Yoshinouchi JP, Laser-irradiation method and laser-irradiation device.
    상세보기
  15. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Fukunaga, Takeshi; Nakajima, Setsuo; Miyamoto, Tadayoshi; Yoshinouchi, Atsushi, Laser-irradiation method and laser-irradiation device.
    상세보기
  16. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Fukunaga, Takeshi; Nakajima, Setsuo; Miyamoto, Tadayoshi; Yoshinouchi, Atsushi, Laser-irradiation method and laser-irradiation device.
    상세보기
  17. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, MIS semiconductor device and method of fabricating the same.
    상세보기
  18. Lee Jae-won (Seoul KRX), Manufacturing method and device for a polycrystalline silicon.
    상세보기
  19. Yoon Jung Kee,KRX, Method and system for manufacturing semiconductor device.
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  20. Carey Paul G. ; Smith Patrick M. ; Sigmon Thomas W. ; Aceves Randy C., Method for formation of thin film transistors on plastic substrates.
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  21. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX) Suzuki Atsunori (Kanagawa JPX), Method for manufacturing a semiconductor device using a catalyst.
    상세보기
  22. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX) Suzuki Atsunori (Kanagawa JPX), Method for manufacturing a semiconductor device using a catalyst.
    상세보기
  23. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX, Method for producing insulated gate thin film semiconductor device.
    상세보기
  24. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX, Method for producing insulated gate thin film semiconductor device.
    상세보기
  25. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX, Method for producing insulated gate thin film semiconductor device.
    상세보기
  26. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.
    상세보기
  27. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.
    상세보기
  28. Shunpei Yamazaki JP, Method of crystallizing a semiconductor layer in a MIS transistor.
    상세보기
  29. Tochikubo Hiroo (Tokyo JPX) Kanai Akira (Hachiohji JPX), Method of fabricating single-crystalline silicon films.
    상세보기
  30. Masafumi Hiraishi JP; Katsuhiko Hayashi JP; Hideo Yamagishi JP, Method of fabricating thin-film photovoltaic module.
    상세보기
  31. Takenouchi Akira (Kanagawa JPX) Suzuki Atsunori (Kanagawa JPX) Ohnuma Hideto (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamazaki Shunpei (Tokyo JPX), Method of forming a semiconductor device by activating regions with a laser light.
    상세보기
  32. Yoshida Noriyuki (Osaka JPX) Takano Satoshi (Osaka JPX) Fujino Kousou (Osaka JPX) Okuda Shigeru (Osaka JPX) Hara Tsukushi (Chofu JPX) Ishii Hideo (Chofu JPX), Method of forming single-crystalline thin film.
    상세보기
  33. Chae Kie S. (Kyunggi KRX), Method of making a thin film transistor by overlapping annealing using lasers.
    상세보기
  34. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Adachi Hiroki,JPX ; Koyama Itaru,JPX ; Yamazaki Shunpei,JPX, Method of making thin film transistor with anodic oxidation.
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  35. Masao Tamura (Tokorozawa JPX) Kozuka Hirotsugu (Tokyo JPX) Wada Yasuo (Tokyo JPX) Ohkura Makoto (Hachioji JPX) Hiroshi Tamura (Hachioji JPX) Tokuyama Takashi (Higashikurume JPX) Okabe Takahiro (Tokyo, Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon l.
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  36. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Ishihara Hiroaki,JPX, Method of manufacturing a semiconductor device by using a homogenized rectangular laser beam.
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  37. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Takeyama Junichi,JPX, Method of preparing a semiconductor having a controlled crystal orientation.
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  38. Tanaka, Koichiro, Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device.
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  39. Miyao Masanobu (Tokorozawa JPX) Ohkura Makoto (Hachioji JPX) Takemoto Iwao (Nishitama JPX) Tamura Masao (Tokorozawa JPX), Method of producing single-crystal silicon film.
    상세보기
  40. Takemura Yasuhiko,JPX, Process for fabricating semiconductor device.
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  41. Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX ; Takayama Toru,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Takeyama Junichi,JPX, Semiconductor device and method for its preparation.
    상세보기
  42. Arao, Tatsuya; Tanada, Yoshifumi; Shibata, Hiroshi, Semiconductor device and method for manufacturing the same.
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  43. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Semiconductor device having channel refractive index in first and second directions.
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  44. Law Kam (Union City CA) Robertson Robert (Palo Alto CA) Feng Guofu J. (San Jose CA), Single chamber CVD process for thin film transistors.
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  45. Takemura Yasuhiko,JPX ; Konuma Toshimitsu,JPX, Thin film semiconductor integrated circuit.
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  46. Takemura Yasuhiko,JPX ; Konuma Toshimitsu,JPX, Thin film transistor having offset region.
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  47. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
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  48. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor having a catalyst element in its active regions.
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  49. Owa Soichi,JPX ; Ohtsuki Tomoko,JPX, Ultraviolet laser apparatus and semiconductor exposure apparatus.
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이 특허를 인용한 특허 (16)

  1. Sasaki, Nobuo; Ohki, Koichi, Apparatus for crystallizing semiconductor with laser beams.
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  2. Sasaki, Nobuo; Ohki, Koichi, Apparatus for crystallizing semiconductor with laser beams.
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  3. Sasaki,Nobuo; Uzuka,Tatsuya, Apparatus for crystallizing semiconductor with laser beams.
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  4. Kasahara,Kenji; Kawasaki,Ritsuko; Ohtani,Hisashi; Tanaka,Koichiro, Laser apparatus and laser annealing method.
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  5. Tanaka, Koichiro, Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device.
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  6. Tanaka, Koichiro, Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device.
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  7. Tanaka, Koichiro, Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device.
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  8. Sasaki, Nobuo; Ohki, Koichi, Method and apparatus for crystallizing semiconductor with laser beams.
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  9. Tanaka, Koichiro, Method of fabricating semiconductor device.
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  10. Eguchi,Tsukasa; Sera,Hiroshi, Method of manufacturing thin film semiconductor device, thin film semiconductor device, electro-optical device, and electronic apparatus.
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  11. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  12. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  13. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  14. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  15. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.
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  16. Yamazaki, Shunpei, Semiconductor display device and method of manufacturing the same.
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