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Semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G02F-001/1343
  • G02F-001/13
출원번호 US-0292357 (2005-12-02)
우선권정보 JP-7-267308(1995-10-16); JP-7-324578(1995-12-13); JP-8-102817(1996-04-24); JP-8-152729(1996-06-13); JP-8-194451(1996-07-24)
발명자 / 주소
  • Matsushima,Yasuhiro
출원인 / 주소
  • Sharp Kabushiki Kaisha
대리인 / 주소
    Nixon & Vanderhye PC
인용정보 피인용 횟수 : 24  인용 특허 : 27

초록

초록이 없습니다.

대표청구항

대표청구항이 없습니다.

이 특허에 인용된 특허 (27)

  1. Shimada Takayuki (Nara JPX) Matsushima Yasuhiro (Kashihara JPX) Takafuji Yutaka (Nara JPX), Active matrix display device.
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  2. Shimada Takayuki (Kashihara JPX) Matsushima Yasuhiro (Kashihara JPX) Takafuji Yutaka (Nara JPX), Active matrix display device having additional capacitors connected to switching elements and additional capacitor commo.
    상세보기
  3. Mikoshiba Hiroaki (Tokyo JPX), Active matrix liquid crystal display cell with light blocking capacitor electrode above insulating layer.
    상세보기
  4. Kouchi Tetsunobu,JPX, Active matrix type liquid crystal display apparatus with conductive light shield element.
    상세보기
  5. Noda Kazuhiro (Kanagawa JPX) Nakamua Shinji (Tokyo JPX) Hayashi Hisao (Kanagawa JPX) Kadota Hisashi (Kanagawa JPX), Active-matrix substrate.
    상세보기
  6. Kadota Hisashi,JPX ; Inoue Yuko,JPX ; Urazono Takenobu,JPX ; Kunii Masafumi,JPX ; Nakamura Shinj,JPX, Color display device.
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  7. Yamaji Toshifumi,JPX ; Masahara Kou,JPX ; Oda Nobuhiko,JPX ; Suzuki Koji,JPX ; Nakanishi Shiro,JPX ; Abe Hisashi,JPX ; Yoneda Kiyoshi,JPX ; Morimoto Yoshihiro,JPX, Display units having two insolating films and a planarizing film and process for producing the same.
    상세보기
  8. Yamazaki Shunpei,JPX ; Mase Akira,JPX ; Hiroki Masaaki,JPX ; Takemura Yasuhiko,JPX, Electro-optical device and method of driving the same.
    상세보기
  9. Liu Michael S. (Bloomington MN) Lo Ka-Lun (New Hope MN) Sarma Kalluri R. (Mesa AZ), High resolution active matrix LCD cell design.
    상세보기
  10. Aoki Yoshiro,JPX ; Sato Hajime,JPX, LCD having capacitor lines with particular structures.
    상세보기
  11. Miyawaki Mamoru (Tokyo JPX) Sugawa Shigetoshi (Atsugi JPX), Liquid crystal display apparatus with a plural layer connection between the TFT drains and the pixel electrodes.
    상세보기
  12. Matsushima Yasuhiro,JPX, Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bu.
    상세보기
  13. Ino Masumitsu (Kanagawa JPX), Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel.
    상세보기
  14. Matsushima Yasuhiro,JPX, Liquid crystal display device with active matrix substrate using source/drain electrode as capacitor conductor.
    상세보기
  15. Miyawaki Mamoru,JPX, Liquid crystal display having power source lines connected to the wells of the TFTs.
    상세보기
  16. Jang Seok-Pil,KRX, Liquid crystal display with pixel electrode divided in two by common electrode line.
    상세보기
  17. Zhang Hongyong,JPX, Liquid crystal electrooptical device.
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  18. Tsujikawa Susumu (Tokyo JPX) Okumura Fujio (Tokyo JPX), Liquid crystal light valve showing an improved display contrast.
    상세보기
  19. Omae Hideki,JPX ; Takahara Hiroshi,JPX ; Sannohe Shinya,JPX, Liquid crystal panel with reducing means, manufacturing method therefor and projection display apparatus using the same.
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  20. Sato Hideo (Hitachi JPX) Hoshino Minoru (Hitachi JPX) Mori Yuji (Ibaraki JPX) Komura Shinichi (Sheffield GBX) Nagae Yoshiharu (Hitachi JPX) Katsuyama Ichirou (Hitachi JPX) Nagata Tetsuya (Katsuta JPX, Liquid crystal substrate having 3 metal layers with slits offset to block light from reaching the substrate.
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  21. Kim Hong-Gyu,KRX ; Han Kyung-Seob,KRX ; Lee Ho-Young,KRX, Method for fabricating liquid crystal display in which the pixel electrode has a particular connection to the drain el.
    상세보기
  22. Moon Dae-Gyu,KRX, Method of fabricating liquid crystal display with increased aperture ratio.
    상세보기
  23. Matsushima, Yasuhiro, Semiconductor device.
    상세보기
  24. Zhang, Hongyong, Semiconductor device and electronic device.
    상세보기
  25. Zhang Hongyong,JPX, Semiconductor device having an insulated gate field effect thin film transistor.
    상세보기
  26. Yasuhiro Matsushima JP, Switching element substrate having additional capacity and manufacturing method thereof.
    상세보기
  27. Sasaki Makoto (Tokyo JPX) Sato Syunichi (Kawagoe JPX) Mori Hisatoshi (Fussa JPX), Thin film transistor panel and manufacturing method thereof.
    상세보기

이 특허를 인용한 특허 (24)

  1. Shibata, Hiroshi; Isobe, Atsuo, Display device comprising a thin film transistor and a storage capacitor.
    상세보기
  2. Shibata, Hiroshi; Isobe, Atsuo, Display device comprising pixel.
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  3. Shibata,Hiroshi; Isobe,Atsuo, Display device comprising pixel portion.
    상세보기
  4. Shibata, Hiroshi; Isobe, Atsuo, Display device having capacitor wiring.
    상세보기
  5. Shibata, Hiroshi; Isobe, Atsuo, Liquid crystal device having a thin film transistor.
    상세보기
  6. Shibata, Hiroshi; Isobe, Atsuo, Liquid crystal display device including light shielding film.
    상세보기
  7. Yamazaki, Shunpei; Koyama, Jun, Liquid-crystal display device and method of fabricating the same.
    상세보기
  8. Shibata, Hiroshi; Isobe, Atsuo, Projector including display device.
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  9. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  10. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  11. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  12. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  13. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  14. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osame, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device and method of manufacturing the same.
    상세보기
  15. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osame, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device and method of manufacturing the same.
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  16. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osamè, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device and method of manufacturing the same.
    상세보기
  17. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device and method of manufacturing therefor.
    상세보기
  18. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film.
    상세보기
  19. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film.
    상세보기
  20. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a spacer wherein the spacer has an opening through which a pixel electrode is connected to a first transistor.
    상세보기
  21. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osame, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same.
    상세보기
  22. Shibata, Hiroshi; Isobe, Atsugo, Semiconductor device comprising pixel portion.
    상세보기
  23. Yamazaki, Shunpei; Koyama, Jun; Kuwabara, Hideaki; Fujikawa, Saishi, Semiconductor device, and manufacturing method thereof.
    상세보기
  24. Yamazaki, Shunpei; Koyama, Jun; Kuwabara, Hideaki; Fujikawa, Saishi, Semiconductor device, and manufacturing method thereof.
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