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Layered substrates for epitaxial processing, and device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-025/00
출원번호 US-0904131 (2001-07-11)
발명자 / 주소
  • Ueda,Tetsuzo
출원인 / 주소
  • Matsushita Electric Industrial Co., Ltd.
대리인 / 주소
    McDermott Will & Emery
인용정보 피인용 횟수 : 72  인용 특허 : 24

초록

초록이 없습니다.

대표청구항

대표청구항이 없습니다.

이 특허에 인용된 특허 (24)

  1. Lee Jhang W. (Mansfield MA) McCullough Richard E. (Wrentham MA), Annealing method for III-V deposition.
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  2. Westmoreland Donald (Boise ID), CVD method for semiconductor manufacture using rapid thermal pulses.
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  3. Hansson Per-Ove,SGX, CVD reactor and process for producing an epitally coated semiconductor wafer.
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  4. Nakamura Shuji (Anan JPX), Crystal growth method for gallium nitride-based compound semiconductor.
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  5. Solomon Glenn S., Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the.
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  6. Habuka Hitoshi,JPX, Heat treating method of a semiconductor single crystal substrate.
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  7. Chiang Ping-Wang (Los Gatos CA), Low pressure chemical vapor deposition of silicon nitride films.
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  8. Sung JanMye,TWX, Memory cell array with a self-aligned, buried bit line.
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  9. Purdes Andrew J. (Garland TX), Method for heteroepitaxial growth using tensioning layer on rear substrate surface.
    상세보기
  10. Gmitter Thomas J. (Lakewood NJ) Yablonovitch Eli (Middletown NJ), Method for lifting-off epitaxial films.
    상세보기
  11. Kiyoku Hiroyuki,JPX ; Nakamura Shuji,JPX ; Kozaki Tokuya,JPX ; Iwasa Naruhito,JPX ; Chocho Kazuyuki,JPX, Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device.
    상세보기
  12. Calviello Joseph A. (Kings Park NY) Hickman Grayce A. (Hicksville NY), Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substr.
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  13. Tischler Michael A. (Danbury CT) Kuech Thomas F. (Madison WI), Method of making a single crystals Ga*N article.
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  14. Kito Yasuo,JPX ; Kotanshi Youichi,JPX ; Onda Shoichi,JPX ; Hanazawa Tatuyuki,JPX ; Kitaoka Eiji,JPX, Method of producing single-crystal silicon carbide.
    상세보기
  15. Sasaki Nobuo (Kawasaki JPX), Process for producing a semiconductor device having an identification mark in an insulating substrate.
    상세보기
  16. Molnar Richard J., Process for producing high-quality III-V nitride substrates.
    상세보기
  17. Manabe Katsuhide (Aichi-ken JPX) Koike Masayoshi (Aichi-ken JPX) Kato Hisaki (Aichi-ken JPX) Koide Norikatsu (Aichi-ken JPX) Akasaki Isamu (Aichi-ken JPX) Amano Hiroshi (Aichi-ken JPX), Sapphireless group III nitride semiconductor and method for making same.
    상세보기
  18. Pey Kin-Leong,SGX, Selective CVD TiSi.sub.2 deposition with TiSi.sub.2 liner.
    상세보기
  19. Nishimura Takashi (Itami JPX), Semiconductor device.
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  20. Sugawara Hideto,JPX ; Ishikawa Masayuki,JPX, Semiconductor light emitting element and its manufacturing method.
    상세보기
  21. Chen Bomy A. (Hopewell Junction NY) Hook Terence B. (Jericho Center VT) Kulkarni Subhash B. (Peekskill NY), Semiconductor manufacturing process for low dislocation defects.
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  22. Morishita, Takashi; Matsui, Masahiro, Semiconductor substrate and its production method, semiconductor device comprising the same and its production method.
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  23. Hirai Toshio (Sendai JPX) Niihara Koichi (Sendai JPX), Super hard-highly pure silicon nitrides.
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  24. Mikoshiba Nobuo (Sendai JPX) Tsubouchi Kazuo (Sendai JPX) Sugai Kazuyoshi (Sendai JPX), Surface acoustic wave device using an elastic substrate and an aluminum nitride piezoelectric film.
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  1. Poblenz, Christiane; Speck, James S.; Kamber, Derrick S., Ammonothermal method for growth of bulk gallium nitride.
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  2. D'Evelyn, Mark P., Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride.
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  3. Pakalapati, Rajeev Tirumala; D'Evelyn, Mark P., Apparatus for high pressure reaction.
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  4. Rajeev, Pakalapati Tirumala; Pocius, Douglas W.; D'Evelyn, Mark P., Apparatus for large volume ammonothermal manufacture of gallium nitride crystals and methods of use.
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  5. Ramdani, Jamal, Backside stress compensation for gallium nitride or other nitride-based semiconductor devices.
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  6. Ramdani, Jamal, Backside stress compensation method for making gallium nitride or other nitride-based semiconductor devices.
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  7. Rajeev, Pakalapati Tirumala; Pocius, Douglas Wayne; Kamber, Derrick S.; Coulter, Michael, Capsule for high pressure, high temperature processing of materials and methods of use.
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  8. He, Gang; Higashi, Gregg, Continuous feed chemical vapor deposition.
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  9. Langer, Robert; Lahreche, Hacène, Doped substrate to be heated.
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  10. Nijhawan,Sandeep; Eaglesham,David; Washington,Lori; Bour,David; Smith,Jacob, Dual-side epitaxy processes for production of nitride semiconductor structures.
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  11. Cornfeld, Arthur; McGlynn, Daniel; Varghese, Tansen, Epitaxial lift off in inverted metamorphic multijunction solar cells.
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  12. Gmitter, Thomas; He, Gang, Epitaxial lift off stack having a multi-layered handle and methods thereof.
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  13. Gmitter, Thomas; He, Gang; Hegedus, Andreas, Epitaxial lift off stack having a non-uniform handle and methods thereof.
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  14. Gmitter, Thomas; He, Gang; Hegedus, Andreas, Epitaxial lift off stack having a non-uniform handle and methods thereof.
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  15. Archer, Melissa; Atwater, Harry; Gmitter, Thomas; He, Gang; Hegedus, Andreas; Higashi, Gregg; Sonnenfeldt, Stewart, Epitaxial lift off stack having a pre-curved handle and methods thereof.
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  16. Archer, Melissa; Atwater, Harry; Gmitter, Thomas; He, Gang; Hegedus, Andreas; Higashi, Gregg; Sonnenfeldt, Stewart, Epitaxial lift off stack having a pre-curved handle and methods thereof.
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  17. Gmitter, Thomas; He, Gang; Hegedus, Andreas, Epitaxial lift off stack having a unidirectionally shrunk handle and methods thereof.
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  18. Archer, Melissa; Atwater, Harry; Gmitter, Thomas; He, Gang; Hegedus, Andreas; Higashi, Gregg; Sonnenfeldt, Stewart, Epitaxial lift off stack having a universally shrunk handle and methods thereof.
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  19. Raring, James W.; Rudy, Paul; Khosla, Vinod; Lamond, Pierre; Denbaars, Steven P.; Nakamura, Shuji; Ogawa, Richard T., Gallium and nitrogen containing laser diode dazzling devices and methods of use.
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  20. Raring, James W.; Rudy, Paul; Khosla, Vinod; Lamond, Pierre; Denbaars, Steven P.; Nakamura, Shuji; Ogawa, Richard T., Gallium and nitrogen containing laser diode dazzling devices and methods of use.
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  21. Raring, James W.; Rudy, Paul, Gallium nitride based laser dazzling device and method.
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  22. Raring, James W.; Rudy, Paul, Gallium nitride based laser dazzling device and method.
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  23. Raring, James W.; Rudy, Paul, Gallium nitride based laser dazzling method.
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  24. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William, Gallium-nitride-on-handle substrate materials and devices and method of manufacture.
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  25. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William D., Gallium—nitride-on-handle substrate materials and devices and method of manufacture.
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  26. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
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  27. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
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  28. Pakalapati, Rajeev T.; D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
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  29. D'Evelyn, Mark P.; Kapp, Joseph A.; Lawrenson, John C., High pressure apparatus with stackable rings.
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  30. Jiang, Wenkan; D'Evelyn, Mark P.; Kamber, Derrick S.; Ehrentraut, Dirk; Krames, Michael, High quality group-III metal nitride crystals, methods of making, and methods of use.
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  31. D'Evelyn, Mark P.; Speck, James S.; Kamber, Derrick S.; Pocius, Douglas W., Large area nitride crystal and method for making it.
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  32. D'Evelyn, Mark P.; Speck, James; Houck, William; Schmidt, Mathew; Chakraborty, Arpan, Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices.
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  33. D'Evelyn, Mark P.; Jiang, Wenkan; Kamber, Derrick S.; Pakalapati, Rajeev T.; Krames, Michael R., Large area seed crystal for ammonothermal crystal growth and method of making.
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  34. D'Evelyn, Mark P.; Ehrentraut, Dirk; Jiang, Wenkan; Downey, Bradley C., Large area, low-defect gallium-containing nitride crystals, method of making, and method of use.
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  35. Poblenz, Christiane; Speck, James S.; Kamber, Derrick S., Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture.
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  36. Raring, James W.; Rudy, Paul, Laser device and method for a vehicle.
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  37. Raring, James W.; Rudy, Paul, Laser device and method for a vehicle.
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  38. Archer, Melissa, Mesa etch method and composition for epitaxial lift off.
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  39. Poblenz, Christiane; Schmidt, Mathew C.; Feezell, Daniel F.; Raring, James W.; Sharma, Rajat, Method and structure for manufacture of light emitting diode devices using bulk GaN.
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  40. D'Evelyn, Mark P.; Poblenz, Christiane; Krames, Michael R., Method for growth of indium-containing nitride films.
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  41. Jiang, Wenkan; Ehrentraut, Dirk; Downey, Bradley C.; D'Evelyn, Mark P., Method for quantification of extended defects in gallium-containing nitride crystals.
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  42. D'Evelyn, Mark P.; Speck, James S., Method for synthesis of high quality large area bulk gallium based crystals.
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  43. Washington, Lori D.; Bour, David P.; Higashi, Gregg; He, Gang, Method of high growth rate deposition for group III/V materials.
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  44. Krames, Mike; D'Evelyn, Mark; Pakalapati, Rajeev; Alexander, Alex; Kamber, Derrick, Method of making bulk InGaN substrates and devices thereon.
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  45. Kim, Yong Jin; Lee, Dong Kun, Method of manufacturing gallium nitride semiconductor.
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  46. He, Gang; Higashi, Gregg; Sorabji, Khurshed; Hamamjy, Roger; Hegedus, Andreas; Archer, Melissa; Atwater, Harry; Sonnenfeldt, Stewart, Methods and apparatus for a chemical vapor deposition reactor.
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  47. Wanlass, Mark W., Methods of manipulating stressed epistructures.
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  48. D'Evelyn, Mark P.; Sharma, Rajat, Microcavity light emitting diode method of manufacture.
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  49. He, Gang; Hegedus, Andreas, Multiple stack deposition for epitaxial lift off.
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  50. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M., Photonic-crystal light emitting diode and method of manufacture.
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  51. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M.; Feezell, Daniel F., Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors.
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  52. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M.; Feezell, Daniel F., Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors.
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  53. D'Evelyn, Mark P., Polycrystalline group III metal nitride with getter and method of making.
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  54. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
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  55. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
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  56. D'Evelyn, Mark P., Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer.
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  57. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
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  58. D'Evelyn, Mark P., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
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  59. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
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  60. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules.
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  61. Akiyama, Shoji; Ito, Atsuo; Kubota, Yoshihiro; Tanaka, Koichi; Kawai, Makoto; Tobisaka, Yuuji, Process for producing laminated substrate and laminated substrate.
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  62. D'Evelyn, Mark P., Semi-insulating group III metal nitride and method of manufacture.
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  63. Matsugai, Hiroyasu; Tabuchi, Kiyotaka, Semiconductor device and method of manufacturing semiconductor device.
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  64. Gmitter, Thomas; He, Gang; Archer, Melissa; Hegedus, Andreas, Tape-based epitaxial lift off apparatuses and methods.
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  65. Gmitter, Thomas; He, Gang; Archer, Melissa; Hegedus, Andreas, Tape-based epitaxial lift off apparatuses and methods.
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  66. He, Gang; Hegedus, Andreas, Tiled substrates for deposition and epitaxial lift off processes.
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  67. Jiang, Wenkan; Ehrentraut, Dirk; D'Evelyn, Mark P., Transparent group III metal nitride and method of manufacture.
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  68. Alexander, Alex; Nink, Jr., John W.; D'Evelyn, Mark P., Ultrapure mineralizers and methods for nitride crystal growth.
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  69. Tao, Chin-San; Hsu, Tzu-Chien; Wang, Tsen-Kuei, Wafer-scaled light-emitting structure.
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  70. Tao, Chin-San; Hsu, Tzu-Chien; Wang, Tsen-Kuei, Wafer-scaled light-emitting structure.
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  71. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
    상세보기
  72. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
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