$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Strained gettering layers for semiconductor processes 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/8238
  • H01L-021/70
  • H01L-021/322
  • H01L-021/02
출원번호 US-0956481 (2004-10-01)
발명자 / 주소
  • Fitzgerald,Eugene A.
  • Pitera,Arthur J.
출원인 / 주소
  • Massachusetts Institute of Technology
대리인 / 주소
    Wolf, Greenfield & Sacks, P.C.
인용정보 피인용 횟수 : 46  인용 특허 : 23

초록

초록이 없습니다.

대표청구항

대표청구항이 없습니다.

이 특허에 인용된 특허 (23)

  1. Francois J. Henley ; Michael A. Brayan ; William G. En, Cleaving process to fabricate multilayered substrates using low implantation doses.
  2. Francois J. Henley ; Nathan W. Cheung, Controlled cleavage thin film separation process using a reusable substrate.
  3. Henley, Francois J.; Cheung, Nathan W., Controlled cleaving process.
  4. Wang,Chia Gee; Tsu,Raphael; Lofgren,John Clay, Epitaxial SiObarrier/insulation layer.
  5. Kub Francis J. ; Hobart Karl D., Fabrication ultra-thin bonded semiconductor layers.
  6. Buller, James F.; Wristers, Derick J.; Wu, David; Sultan, Akif, Formation of ultra-shallow depth source/drain extensions for MOS transistors.
  7. Nathan W. Cheung ; Francois J. Henley, Generic layer transfer methodology by controlled cleavage process.
  8. Henley Francois J. ; Cheung Nathan W., Gettering technique for silicon-on-insulator wafers.
  9. Henley, Francois J.; Cheung, Nathan W., Gettering technique for wafers made using a controlled cleaving process.
  10. Henley, Francois J.; Cheung, Nathan W., Gettering technique for wafers made using a controlled cleaving process.
  11. Francois J. Henley ; Michael A. Bryan ; William G. En, High temperature implant apparatus.
  12. Carr, William; Usenko, Alexander, Method of manufacture of a multi-layered substrate with a thin single crystalline layer and a versatile sacrificial layer.
  13. Nakamura, Osamu; Katsumura, Manabu; Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  14. Takamizawa Shoichi,JPX ; Kobayashi Norihiro,JPX, Method of manufacturing mirror-polished silicon wafers, and apparatus for processing silicon wafers.
  15. Aspar,Bernard; Bruel,Michel; Poumeyrol,Thierry, Method of producing a thin layer of semiconductor material.
  16. Henley Francois J. ; Cheung Nathan W., Pre-semiconductor process implant and post-process film separation.
  17. Alexander Yuri Usenko, Process for lift-off of a layer from a substrate.
  18. Bruel Michel,FRX, Process for the manufacture of thin films of semiconductor material.
  19. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  20. Ariyoshi Hisashi (Tokyo JPX) Kasanami Toru (Kyoto JPX) Fukuda Susumu (Osaka JPX), Producing a compound semiconductor device on an oxygen implanted silicon substrate.
  21. Forbes,Leonard, Silicon oxycarbide substrates for bonded silicon on insulator.
  22. Srikrishnan Kris V., Smart-cut process for the production of thin semiconductor material films.
  23. Cohen, Guy Moshe; Christiansen, Silke Hildegard, Strained silicon-on-insulator (SSOI) and method to form the same.

이 특허를 인용한 특허 (46)

  1. Yu, Tien-Wei; Chien, Chin-Cheng; Lai, I-Ming; Chen, Shin-Chi; Li, Chih-Yueh; Chuang, Fong-Lung; Liao, Chin-I; Lin, Kuan-Yu, Compound semiconductor epitaxial structure and method for fabricating the same.
  2. Fu, Ssu-I; Hung, Yu-Hsiang; Chen, Cheng-Guo; Chang, Chung-Fu; Lin, Chien-Ting, Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structures.
  3. Lai, Szu-Hao; Wu, Chun-Yuan; Chien, Chin-Cheng; Yu, Tien-Wei; Chang, Ming-Hua; Lin, Yu-Shu; Wen, Tsai-Yu; Hsu, Hsin-Kuo, Epitaxial process.
  4. Liang, Chia-Jui; Tsao, Po-Chao, Epitaxial process.
  5. Lee, Junedong; Sadana, Devendra K.; Schepis, Dominic J., Fabrication of SOI with gettering layer.
  6. Hung, Yu-Hsiang; Fu, Ssu-I; Lin, Chien-Ting; Tsao, Po-Chao; Chang, Chung-Fu; Chen, Cheng-Guo, Fin-shaped field-effect transistor (FinFET).
  7. Liao, Chin-I; Chien, Chin-Cheng, Gradient dopant of strained substrate manufacturing method of semiconductor device.
  8. Yeh, Chiu-Hsien; Chien, Chin-Cheng; Wang, Yu-Wen, Manufacturing method for semiconductor structure.
  9. Tsai, Shih-Hung; Chiang, Wen-Tai; Tsai, Chen-Hua; Tsai, Cheng-Tzung, Metal-gate CMOS device.
  10. Tsai, Shih-Hung; Chiang, Wen-Tai; Tsai, Chen-Hua; Tsai, Cheng-Tzung, Metal-gate CMOS device and fabrication method thereof.
  11. Hung, Ching-Wen; Wu, Jia-Rong; Huang, Chih-Sen, Method for fabricating fin-shaped field-effect transistor.
  12. Liao, Chin-I; Lai, I-Ming; Chien, Chin-Cheng, Method for fabricating first and second epitaxial cap layers.
  13. Huang, Shin-Chuan; Hwang, Guang-Yaw; Wang, Hsiang-Ying; Hung, Yu-Hsiang; Wang, I-Chang, Method for fabricating semiconductor device.
  14. Hsu, Ching-Pin; Lin, Yi-Po; Liao, Jiunn-Hsiung; Chen, Chieh-Te; Chang, Feng-Yi; Tsai, Shang-Yuan; Chen, Li-Chiang, Method for forming void-free dielectric layer.
  15. Baillin, Xavier, Method for the production of a substrate comprising embedded layers of getter material.
  16. Liu, Chia-Jong; Wu, Yen-Liang; Chang, Chung-Fu; Hung, Yu-Hsiang; Chou, Pei-Yu; Cheng, Home-Been, Method of controlling etching process for forming epitaxial structure.
  17. Guo, Ted Ming-Lang; Chien, Chin-Cheng; Chan, Shu-Yen; Yang, Chan-Lon; Wu, Chun-Yuan, Method of fabricating a semiconductor structure.
  18. Lu, Tsuo-Wen; Lai, I-Ming; Hou, Tsung-Yu; Lin, Chien-Liang; Teng, Wen-Yi; Wang, Shao-Wei; Wang, Yu-Ren; Chien, Chin-Cheng, Method of fabricating an epitaxial layer.
  19. Chien, Chin-Cheng; Wu, Chun-Yuan; Liu, Chih-Chien; Lin, Chin-Fu; Tsai, Teng-Chun, Method of forming semiconductor device.
  20. Wen, Tsai-Yu; Lu, Tsuo-Wen; Wang, Yu-Ren; Chien, Chin-Cheng; Yu, Tien-Wei; Hsu, Hsin-Kuo; Lin, Yu-Shu; Lai, Szu-Hao; Chang, Ming-Hua, Method of forming semiconductor device.
  21. Yang, Chan-Lon; Guo, Ted Ming-Lang; Liao, Chin-I; Chien, Chin-Cheng; Chan, Shu-Yen; Wu, Chun-Yuan, Method of making strained silicon channel semiconductor structure.
  22. Aulnette,C��cile; Figuet,Christophe; Daval,Nicolas, Method of manufacturing a semiconductor heterostructure.
  23. Liao, Chin-I; Hsu, Chia-Lin; Li, Ming-Yen; Hsieh, Yung-Lun; Chen, Chien-Hao; Lee, Bo-Syuan, Multi-gate field-effect transistor and process thereof.
  24. Liao, Chin-I; Hsu, Chia-Lin; Li, Ming-Yen; Hsieh, Yung-Lun; Chen, Chien-Hao; Lee, Bo-Syuan, Multi-gate field-effect transistor process.
  25. Liao, Chin-I; Jiang, Ching-Hong; Li, Ching-I; Chan, Shu-Yen; Chien, Chin-Cheng, Process for manufacturing stress-providing structure and semiconductor device with such stress-providing structure.
  26. Takizawa, Ritsuo, SOI substrate and method for producing the same, solid-state image pickup device and method for producing the same, and image pickup apparatus.
  27. Chou, Ling-Chun; Wang, I-Chang; Hung, Ching-Wen, Semiconductor device and manufacturing method thereof.
  28. Yang, Chan-Lon; Kuo, Tzu-Feng; Wu, Hsin-Huei; Li, Ching-I; Chan, Shu-Yen, Semiconductor device and manufacturing method thereof.
  29. Hou, Hsin-Ming; Tung, Yu-Cheng; Kung, Ji-Fu; Lien, Wai-Yi; Chen, Ming-Tsung, Semiconductor device and method for fabricating the same.
  30. Liao, Chin-I; Hsuan, Teng-Chun; Chien, Chin-Cheng, Semiconductor device and method of forming epitaxial layer.
  31. Liao, Chin-I; Hsuan, Teng-Chun; Chien, Chin-Cheng, Semiconductor device having epitaxial layer.
  32. Liao, Chin-I; Hsuan, Teng-Chun; Lai, I-Ming; Chien, Chin-Cheng, Semiconductor device having epitaxial structures.
  33. Hou, Hsin-Ming; Tung, Yu-Cheng; Kung, Ji-Fu; Lien, Wai-Yi; Chen, Ming-Tsung, Semiconductor device with epitaxial structures and method for fabricating the same.
  34. Tung, Yu-Cheng, Semiconductor devices.
  35. Liao, Chin-I; Hsu, Chia-Lin; Li, Ming-Yen; Wu, Hsin-Huei; Hsieh, Yung-Lun; Chen, Chien-Hao; Lee, Bo-Syuan, Semiconductor process.
  36. Tsai, Tzung-I; Lu, Shui-Yen, Semiconductor process.
  37. Tsai, Zen-Jay; Hsu, Shao-Hua; Pai, Chi-Horn; Chou, Ying-Hung; Su, Shih-Hao; Hsu, Shih-Chieh; Wang, Chih-Ho; Wu, Hung-Yi; Lu, Shui-Yen, Semiconductor process.
  38. Chang, Ming-Hua; Wu, Chun-Yuan; Chien, Chin-Cheng; Yu, Tien-Wei; Lin, Yu-Shu; Lai, Szu-Hao, Semiconductor process for modifying shape of recess.
  39. Chang, Ming-Hua; Wu, Chun-Yuan; Chien, Chin-Cheng; Yu, Tien-Wei; Lin, Yu-Shu; Lai, Szu-Hao, Semiconductor process for modifying shape of recess.
  40. Liao, Chin-I; Chien, Chin-Cheng, Semiconductor structure.
  41. Wei, Ming-Te; Huang, Shin-Chuan; Hung, Yu-Hsiang; Tsao, Po-Chao; Liang, Chia-Jui; Chen, Ming-Tsung; Liang, Chia-Wen, Semiconductor structure and fabrication method thereof.
  42. Wei, Ming-Te; Huang, Shin-Chuan; Hung, Yu-Hsiang; Tsao, Po-Chao; Liang, Chia-Jui; Chen, Ming-Tsung; Liang, Chia-Wen, Semiconductor structure and fabrication method thereof.
  43. Liao, Chin-I; Chien, Chin-Cheng, Semiconductor structure and process thereof.
  44. Cherekdjian, Sarko, Semiconductor structure made using improved multiple ion implantation process.
  45. Chou, Ling-Chun; Wang, I-Chang; Hung, Ching-Wen, Spacer scheme for semiconductor device.
  46. Yang, Chan-Lon; Guo, Ted Ming-Lang; Liao, Chin-I; Chien, Chin-Cheng; Chan, Shu-Yen; Wu, Chun-Yuan, Strained silicon channel semiconductor structure.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로