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Formation of boride barrier layers using chemisorption techniques 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
  • H01L-021/02
출원번호 US-0993925 (2004-11-19)
발명자 / 주소
  • Byun,Jeong Soo
  • Mak,Alfred
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson & Sheridan, LLP.
인용정보 피인용 횟수 : 58  인용 특허 : 241

초록

초록이 없습니다.

대표청구항

대표청구항이 없습니다.

이 특허에 인용된 특허 (241)

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  144. Turner Norman L. (Mountain View CA) White John MacNeill (Los Gatos CA) Berkstresser David (Los Gatos CA), Method of heating and cooling large area glass substrates.
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  148. Nishizawa Jun-ichi (Sendai JPX) Kurabayashi Toru (Sendai JPX), Method of manufacturing a static induction field-effect transistor.
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  149. Nasu Yasuhiro (Sagamihara JPX) Okamoto Kenji (Hiratsuka JPX) Watanabe Jun-ichi (Kawasaki JPX) Endo Tetsuro (Atsugi JPX) Soeda Shinichi (Hiratsuka JPX), Method of manufacturing active matrix display device using insulation layer formed by the ale method.
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