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Process for the transfer of a thin film 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
  • H01L-021/02
출원번호 US-0667707 (2003-09-22)
우선권정보 FR-97 16696(1997-12-30)
발명자 / 주소
  • Moriceau,Hubert
  • Bruel,Michel
  • Aspar,Bernard
  • Maleville,Christophe
출원인 / 주소
  • Commissariat a l'Energie Atomique
대리인 / 주소
    Brinks Hofer Gilson & Lione
인용정보 피인용 횟수 : 12  인용 특허 : 44

초록

초록이 없습니다.

대표청구항

대표청구항이 없습니다.

이 특허에 인용된 특허 (44)

  1. Rambosek Thomas W. (Woodbury MN), Brush segment for industrial brushes.
  2. Henley Francois J. ; Cheung Nathan W., Controlled cleaning process.
  3. Henley Francois J. ; Cheung Nathan, Controlled cleavage process using pressurized fluid.
  4. Kub Francis J. ; Hobart Karl D., Fabrication ultra-thin bonded semiconductor layers.
  5. Okonogi Kensuke,JPX, Laminated SOI substrate and producing method thereof.
  6. Fan John C. C. (Chestnut Hill MA) Dingle Brenda (Mansfield MA) Shastry Shambhu (Franklin MA) Spitzer Mark B. (Sharon MA) McClelland Robert W. (Norwell MA), Light emitting diode bars and arrays and method of making same.
  7. Inoue Satoshi,JPX ; Shimoda Tatsuya,JPX, Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device.
  8. Bruel Michel,FRX ; Aspar Bernard,FRX, Method for achieving a thin film of solid material and applications of this method.
  9. Lee Sahng Kyoo,KRX ; Park Sang Kyun,KRX, Method for fabricating semiconductor wafers.
  10. Aspar Bernard,FRX ; Bruel Michel,FRX, Method for making a thin film of solid material.
  11. Kub, Francis J.; Hobart, Karl D., Method for making electro-optical devices using a hydrogenion splitting technique.
  12. Kub, Francis J.; Hobart, Karl D., Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques.
  13. Bruel Michel (Veurey FRX), Method for placing semiconductive plates on a support.
  14. Aspar, Bernard; Bruel, Michel, Method for producing a thin film comprising introduction of gaseous species.
  15. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
  16. Matsushita Takeshi,JPX ; Tayanaka Hiroshi,JPX, Method for separating a device-forming layer from a base body.
  17. Eisele Dieter (Lampertheim DEX) Pape Jrgen (Brstadt DEX) Hochhut Armin (Brstadt DEX), Method for the production of a disk-shaped silicon semiconductor component with negative beveling.
  18. Goesele Ulrich M. ; Tong Qin-Yi, Method for the transfer of thin layers monocrystalline material onto a desirable substrate.
  19. Goesele Ulrich M. ; Tong Q.-Y., Method for the transfer of thin layers of monocrystalline material to a desirable substrate.
  20. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Method for transferring a thin film comprising a step of generating inclusions.
  21. Doyle Brian S., Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer.
  22. Doyle, Brian S., Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer.
  23. Aspar Bernard,FRX ; Biasse Beatrice,FRX ; Bruel Michel,FRX, Method of obtaining a thin film of semiconductor material.
  24. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.
  25. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.
  26. Bryan, Michael A.; Kai, James K., Nozzle for cleaving substrates.
  27. Henley Francois J. ; Cheung Nathan, Planarizing technique for multilayered substrates.
  28. Henley Francois J. ; Cheung Nathan W., Pressurized microbubble thin film separation process using a reusable substrate.
  29. Deines John L. (Pleasant Valley NY) Ku San-Mei (Poughkeepsie NY) Poponiak Michael R. (Newburgh NY) Tsang Paul J. (Poughkeepsie NY), Process for forming monocrystalline silicon carbide on silicon substrates.
  30. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Process for producing semiconductor article.
  31. Fukunaga Takeshi,JPX, Process for production of SOI substrate and process for production of semiconductor device.
  32. Egloff Richard, Process for production of thin layers of semiconductor material.
  33. Hanson David R. ; Huston ; III Hance H. ; Srikrishnan Kris V., Process for restoring rejected wafers in line for reuse as new.
  34. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  35. Bruel Michel,FRX ; Di Cioccio Lea,FRX, Process for the separation of at least two elements of a structure in contact with one another by ion implantation.
  36. Biasse Beatrice,FRX ; Bruel Michel,FRX ; Zussy Marc,FRX, Process for transferring a thin film from an initial substrate onto a final substrate.
  37. Yamagata Kenji (Kawasaki JPX) Yonehara Takao (Atsugi JPX), Process of fabricating a semiconductor substrate.
  38. Yamauchi, Shoichi; Ohshima, Hisayoshi; Matsui, Masaki; Onoda, Kunihiro; Ooka, Tadao; Yamanaka, Akitoshi; Izumi, Toshifumi, Semiconductor substrate and method of manufacturing the same.
  39. Abe, Takao; Matsuura, Takashi; Murota, Junichi, Semiconductor wafer and method for producing the same.
  40. Cheung Nathan W. ; Sands Timothy D. ; Wong William S., Separation of thin films from transparent substrates by selective optical processing.
  41. Xiang-Zheng Tu (Department of Electrical Engineering ; University of Pennsylvania ; 200 S. 33rd St. Philadelphia PA 19104-6390) Yun-Yan Li (14 Beihehutong Congcheuggu Beijing CNX), Silicon diaphragm piezoresistive pressure sensor and fabrication method of the same.
  42. Henley Francois J. ; Cheung Nathan W., Silicon-on-silicon hybrid wafer assembly.
  43. Bernard Aspar FR; Michel Bruel FR; Eric Jalaguier FR, Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structure.
  44. Robert W. Bower, Transposed split of ion cut materials.

이 특허를 인용한 특허 (12)

  1. Mitani, Kiyoshi, Manufacturing method of bonded wafer.
  2. Henley,Francois J.; Kirk,Harry R., Manufacturing strained silicon substrates using a backing material.
  3. Bruel, Michel, Method and device for fabricating a layer in semiconductor material.
  4. Faure, Bruce; Di Cioccio, Lea, Method of fabricating an epitaxially grown layer.
  5. Meunier-Beillard, Philippe; Hijzen, Erwin; Donkers, Johannes J. T. M., Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby.
  6. Ohnuma, Hideto; Iikubo, Yoichi; Yamazaki, Shunpei, Method of manufacturing semiconductor device.
  7. Letertre, Fabrice, Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods.
  8. Letertre, Fabrice, Methods of fabricating semiconductor structures and devices with strained semiconductor material.
  9. Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
  10. Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
  11. Sinha, Nishant; Sandhu, Gurtej S.; Smythe, John, Semiconductor material manufacture.
  12. Letertre, Fabrice, Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer.
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