이 특허에 인용된 특허 (41)

1. Anna Lena Thilderkvist ; Paul Comita ; Lance Scudder ; Norma Riley, Apparatus and method for surface finishing a silicon film.

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2. Streicher Christian (Rueil Malmaison FRX) Asselineau Lionel (Paris FRX), Combined distillation and permeation process for the separation of oxygenated compounds from hydrocarbons and use thereo.

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3. Minkkinen Ari,FRX ; Burzynski Jean-Pierre,FRX ; Larue Joseph,FRX, Device for catalytic dehydrogenation of a C.sub.2+ paraffinic charge comprising means for inhibiting the freezing of wat.

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4. Francis J. Kub ; Karl D. Hobart, Electronic device with composite substrate.

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5. Kub Francis J. ; Hobart Karl D., Fabrication ultra-thin bonded semiconductor layers.

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6. Ovshinsky Stanford R. (Bloomfield Hills MI) Deng Xunming (Farmington MI) Young Rosa (Troy MI), High quality photovoltaic semiconductor material and laser ablation method of fabrication same.

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7. Takasu Hiroaki (Tokyo JPX) Kojima Yoshikazu (Tokyo JPX) Kamiya Masaaki (Tokyo JPX) Yamazaki Tsuneo (Tokyo JPX) Suzuki Hiroshi (Tokyo JPX) Taguchi Masaaki (Tokyo JPX) Takano Ryuichi (Tokyo JPX) Yabe S, Light valve device making.

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8. Kub Francis J. ; Hobart Karl D., Method for fabricating singe crystal materials over CMOS devices.

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9. Andre-Jacques Auberton-Herve FR, Method for forming cavities in a semiconductor substrate by implanting atoms.

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10. Bernard Aspar FR; Michel Bruel FR; Claude Jaussaud FR; Chrystelle Lagahe FR, Method for producing a thin membrane and resulting structure with membrane.

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11. Goesele Ulrich M. ; Tong Qin-Yi, Method for the transfer of thin layers monocrystalline material onto a desirable substrate.

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12. Goesele Ulrich M. ; Tong Q.-Y., Method for the transfer of thin layers of monocrystalline material to a desirable substrate.

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13. Namba Akihiko,JPX ; Ogura Tetsuyoshi,JPX ; Tomita Yoshihiro,JPX ; Eda Kazuo,JPX, Method of manufacturing a composite substrate and a piezoelectric device using the substrate.

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14. Aspar Bernard,FRX ; Biasse Beatrice,FRX ; Bruel Michel,FRX, Method of obtaining a thin film of semiconductor material.

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15. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.

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16. Godbey David J. (Bethesda MD) Hughes Harold L. (West River MD) Kub Francis J. (Severna Park MD), Method of producing a thin silicon-on-insulator layer.

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17. Abe Takao (Annaka JPX) Nakazato Yasuaki (Koshoku JPX) Uchiyama Atsuo (Koshoku JPX), Method of producing semiconductor substrate.

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18. Bozler Carl O. (Sudbury MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert W. (Wevmouth MA), Method of producing sheets of crystalline material and devices made therefrom.

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19. Sullivan Gerard J. (Thousand Oaks CA) Szwed Mary K. (Huntington Beach CA) Chang Mau-Chung F. (Thousand Oaks CA), Method of transferring a thin film to an alternate substrate.

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20. Atwater, Jr.,Harry A.; Zahler,James M., Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby.

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21. Letertre, Fabrice; Ghyselen, Bruno, Methods for fabricating a substrate.

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22. Ghyselen, Bruno; Letertre, Fabrice, Methods for fabricating final substrates.

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23. Adams John R. (Pasadena TX), Oxygenate removal in MTBE process.

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24. Hisamatsu, Tadashi; Nakamura, Kazuyo; Komatsu, Yuji; Shimizu, Masafumi, Photoelectric converting device.

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25. Bailey Sheila G. (Lakewood OH) Wilt David M. (Bay Village OH) DeAngelo Frank L. (Parma OH), Preferentially etched epitaxial liftoff of InP material.

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26. Kuechler Keith H. ; Lattner James R., Process for converting oxygenates to olefins with direct product quenching for heat recovery.

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27. Marker Terry L., Process for producing polymer grade olefins.

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28. Asselineau Lionel (Paris FRX) Leonard Jacques (Montigny FRX) Chodorge Jean (Antony FRX) Gaillard Jean (Lyons FRX), Process for purifying a C₄ and/or C₅ hydrocarbon cut containing water and dimethyl ether as.

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29. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.

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30. Kaiser Steven W. (South Charleston WV), Production of light olefins.

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31. Kenney Donald M., SOI fabrication method.

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32. Ohshima Hisayoshi,JPX ; Matsui Masaki,JPX ; Onoda Kunihiro,JPX ; Yamauchi Shoichi,JPX, Semiconductor substrate manufacturing method.

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33. Strack Robert D. (Houston TX) Vebeliunas Rimas V. (Houston TX) Bamford David A. (Houston TX) Halle Roy T. (Clear Lake TX), Sequence for separating propylene from cracked gases.

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34. Kub Francis J. ; Hobart Karl D., Single-crystal material on non-single-crystalline substrate.

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35. Srikrishnan Kris V., Smart-cut process for the production of thin semiconductor material films.

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36. Hecht James Burr, Stability and enhanced gain of amplifiers using inductive coupling.

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37. Sakaguchi Kiyofumi,JPX ; Sato Nobuhiko,JPX, Substrate and production method thereof.

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38. Letertre, Fabrice; Maurice, Thibaut, Support-integrated donor wafers for repeated thin donor layer separation.

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39. Letertre, Fabrice; Maurice, Thibaut, Support-integrated donor wafers for repeated thin donor layer separation.

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40. Peterson Ronald V. (Thousand Oaks CA) Krone-Schmidt Wilfried (Fullerton CA), System for precision cleaning by jet spray.

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41. Robert W. Bower, Transposed split of ion cut materials.

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