초록

Alternating impedance electromagnetic bandgap (AI-EBG) structures, systems incorporating AI-EBG structures, and methods of making AI-EBG structures, are disclosed.

대표청구항 ▼

The invention claimed is: 1. A structure comprising: a first layer, wherein the first layer comprises a signal layer; a second layer disposed on a back side of the first layer, wherein the second layer comprises a dielectric layer; a third layer disposed on a back side of the second layer, wherein

The invention claimed is: 1. A structure comprising: a first layer, wherein the first layer comprises a signal layer; a second layer disposed on a back side of the first layer, wherein the second layer comprises a dielectric layer; a third layer disposed on a back side of the second layer, wherein the third layer comprises a solid metal plane; a fourth layer disposed on a back side of the third layer, wherein the fourth layer comprises a dielectric layer; and a fifth layer disposed on a back side of the fourth layer, wherein the fifth layer comprises an alternating impedance electromagnetic bandgap (AI-EBG) plane, the AI-EBG plane comprising: a plurality of first elements disposed on a first plane, each first element comprising a first metal layer, wherein each first element has a rectangular shape; and a second element connecting each first element to an adjacent first element at a position adjacent to the corner of the first element, the second element being disposed on the first plane, the second element comprising the first metal layer, wherein the first elements and second elements substantially filter electromagnetic waves to a stopband floor of about-60 dB to about-140 dB in a bandgap of about 100 MHz to about 50 GHz having a width selected from about 1 GHz, 2 GHz, 3 GHz, 5 GHz, 10 GHz, 20 GHz, and 30 GHz, and having a center frequency positioned at a frequency from about 1 GHz to 37 GHz. 2. The structure of claim 1, further comprising: a sixth layer disposed on a back side of the fifth layer, wherein the sixth layer comprises a dielectric layer; a seventh layer disposed on a back side of the sixth layer, wherein the seventh layer comprises a solid metal plane; an eighth layer disposed on a back side of the seventh layer, wherein the seventh layer comprises a dielectric layer; and a ninth layer disposed on a back side of the eighth layer, wherein the ninth layer comprises a signal layer. 3. The structure of claim 2, further comprising: a tenth layer disposed on a back side of the ninth layer, wherein the tenth layer comprises a dielectric layer; an eleventh layer disposed on a back side of the tenth layer, wherein the eleventh layer comprises a solid metal plane; a twelfth layer disposed on a back side of the eleventh layer, wherein the twelfth layer comprises a dielectric layer; and a thirteenth layer disposed on a back side of the twelfth layer, wherein the thirteenth layer comprises an Al-EBG plane, the Al-EBG plane comprising: a plurality of first elements disposed on a first plane, each first element comprising a first metal layer, wherein each first element has a rectangular shape; and a second element connecting each first element to an adjacent first element at a position adjacent to the corner of the first element, the second element being disposed on the first plane, the second element comprising the first metal layer, wherein the first elements and second elements substantially filter electromagnetic waves to a stopband floor of about-60 dB to about-140 dB in a bandgap of about 100 MHz to about 50 GHz having a width selected from about 1 GHz, 2 GHz, 3 GHz, 5 GHz, 10 GHz, 20 GHz, and 30 GHz, and having a center frequency positioned at a frequency from about 1 GHz to 37 GHz. 4. The structure of claim 2, further comprising: a tenth layer disposed on a back side of the ninth layer, wherein the tenth layer comprises a dielectric layer; an eleventh layer disposed on a back side of the tenth layer, wherein the eleventh layer comprises a solid metal plane; a twelfth layer disposed on a back side of the eleventh layer, wherein the sixteenth layer comprises a dielectric layer; and a thirteenth layer disposed on a back side of the twelfth layer, wherein the thirteenth layer comprises an Al-EBG plane, the Al-EBG plane comprising: a plurality of first elements disposed on a first plane, each first element comprising a first metal layer, wherein each first element has a rectangular shape; and a second element connecting each first element to an adjacent first element at a position adjacent to the comer of the first element, the second element being disposed on the first plane, the second element comprising the first metal layer, wherein the first elements and second elements substantially filter electromagnetic waves to a stopband floor of about-60 dB to about-140 dB in a bandgap of about 100 MHz to about 50 GHz having a width selected from about 1 GHz, 2 GHz, 3 GHz, 5 GHz, 10 GHz, 20 GHz, and 30 GHz, and having a center frequency positioned at a frequency from about 1 GHz to 37 GHz; a fourteenth layer disposed on a back side of the thirteenth layer, wherein the fourteenth layer comprises a dielectric layer; a fifteenth layer disposed on a back side of the fourteenth layer, wherein the fifteenth layer comprises a solid metal plane; a sixteenth layer disposed on a back side of the fifteenth layer, wherein the sixteenth layer comprises a dielectric layer; and a seventeenth layer disposed on a back side of the sixteenth layer, wherein the seventeenth layer comprises a signal layer. 5. The structure of claim 1, wherein the stopband floor is about-80 dB to about-120 dB. 6. The structure of claim 1, wherein the stopband floor is about-50 dB to about-120 dB. 7. The structure of claim 1, wherein the bandgap is about 500 MHz to about 3 GHz. 8. The structure of claim 1, wherein the bandgap is 3 GHz to about 8 GHz. 9. The structure of claim 1, wherein the first metal layer is selected from: copper, aluminum, platinum, and combinations thereof. 10. The structure of claim 1, wherein each of the dielectric layers is selected from: FR4, ceramic, and combinations thereof. 11. The structure of claim 1, wherein each of the solid metal planes is selected from: copper, aluminum, platinum, and combinations thereof. 12. The structure of claim 1, wherein the first elements have a dimension of length of about 0.1 cm to about 20 cm, a width of about 0.1 cm to about 20 cm, and a thickness of about 1 mil to about 10 mils. 13. The structure of claim 1, wherein the second element is a shape selected from: a square shape, a rectangular shape, a polygonal shape, a hexagonal shape, a triangular shape, a circular shape, and combinations thereof. 14. The structure of claim 1, wherein the second element is a shape having a dimension of length about 1 mil to about 1 cm, width about 1 mil to about 1 cm, and thickness about 1 mil to about 10 mils. 15. The structure of claim 1, wherein the structure is included in a system selected from: a cellular system, a power distribution system in any mixed-signal package and board, a power distribution system in any high-speed digital package and board, and combinations thereof. 16. A method of fabricating structure having an alternating impedance electromagnetic bandgap (AI-EBG) plane, comprising: providing a first layer, wherein the first layer comprises a signal layer; disposing a second layer on a back side of the first layer, wherein the second layer comprises a dielectric layer; disposing a third layer on a back side of the second layer, wherein the third layer comprises a solid metal plane; disposing a fourth layer on a back side of the third layer, wherein the fourth layer comprises a dielectric layer; and disposing a fifth layer on a back side of the fourth layer, wherein the fifth layer comprises an alternating impedance electromagnetic bandgap (Al-EBG) plane. 17. The method of claim 16, wherein forming the fifth layer comprises: forming a plurality of first elements, each first element comprising a first metal layer, wherein each first element has a rectangular shape; and forming a second element connecting each first element to an adjacent first element at a position adjacent to the corner of the first element, the second element being disposed on the first plane, the second element comprising the first metal layer, wherein the first elements and second elements substantially filter electromagnetic waves to a stopband floor of about-60 dB to about-120 dB in a bandgap of about 100 MHz to about 50 GHz having a width selected from about 1 GHz, 2 GHz, 3 GHz, 5 GHz, 10 GHz, 20 GHz, and 30 GHz, and having a center frequency positioned at a frequency from about 1 GHz to 37 GHz.