High pressure processing chamber for semiconductor substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
C23C-016/00
C23C-014/00
출원번호
US-0897296
(2004-07-21)
등록번호
US-7255772
(2007-08-14)
발명자
/ 주소
Biberger,Maximilian A.
Layman,Frederick Paul
Sutton,Thomas Robert
출원인 / 주소
Tokyo Electron Limited
대리인 / 주소
Haverstock & Owens LLP
인용정보
피인용 횟수 :
9인용 특허 :
257
초록▼
A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the plate
A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.
대표청구항▼
We claim: 1. A high pressure chamber for processing a semiconductor substrate, the high pressure chamber comprising: a. a platen comprising a first sealing surface and a region for holding the semiconductor substrate the platen further comprising: i. an upper platen having a first aperture; and ii.
We claim: 1. A high pressure chamber for processing a semiconductor substrate, the high pressure chamber comprising: a. a platen comprising a first sealing surface and a region for holding the semiconductor substrate the platen further comprising: i. an upper platen having a first aperture; and ii. a lower platen coupled to the upper platen, the lower platen having a second aperture substantially concentric with the first aperture; b. a chamber housing comprising: i. a plurality of posts, each pair of posts defining one of a plurality of windows, each window providing access to the platen; and ii. a second sealing surface; and c. a single mechanical drive mechanism having a single pressure source for forming and maintaining a wafer cavity containing the region for holding the semiconductor substrate, the single mechanical drive mechanism coupling the platen to the chamber housing and configured (i) to separate the first sealing surface from the second sealing surface for loading of the semiconductor substrate and (ii) to cause the first sealing surface and the second sealing surface to contact, thus forming and maintaining the wafer cavity during high pressure processing; d. a spacer, wherein the first sealing surface and the second sealing surface both seal to the spacer; e. a pedestal having a neck coupled to an upper portion, the neck slidably mounted within the second aperture, the upper portion sized to fit within the first aperture to form a part of the region for holding the semiconductor substrate; and f. a first piston coupled to the neck and configured to slide the neck within the second aperture, thereby extending the upper portion from the upper platen and moving the upper portion into the upper platen. 2. The system of claim 1, wherein the single mechanical drive mechanism comprises a second piston having a hollow neck containing the first piston. 3. The system of claim 1, wherein the upper platen has an upper surface containing a vacuum groove. 4. The system of claim 2, wherein the vacuum groove is coupled to a vacuum port. 5. The system of claim 3, wherein the upper surface further comprises an o-ring groove, the o-ring groove and vacuum groove together forming a vacuum chuck. 6. The system of claim 1, further comprising: a. a supercritical condition generator coupled to the inlet and the outlet; and b. a chemical agent and rinse agent supply arrangement coupled to the inlet. 7. The system of claim 6, wherein the supercritical condition generator comprises: a. a first pump; b. a supply vessel coupled to the first pump; and c. a heater coupling the supply vessel to the inlet. 8. The system of claim 7, further comprising a circulation loop coupled to the inlet and the outlet, the circulation loop comprising a second pump and a filter. 9. The system of claim 8, further comprising a return gas arrangement coupling the outlet to the supercritical condition generator. 10. The system of claim 9, wherein the return gas arrangement comprises a separating vessel. 11. The system of claim 10, wherein the return gas arrangement further comprises a liquefying/purifying arrangement. 12. The system of claim 11, wherein the supply vessel contains carbon dioxide. 13. A system for processing a semiconductor substrate, the system comprising: a. a platen comprising a first sealing surface and a region for holding the semiconductor substrate the platen further comprising: i. an upper platen having a first aperture; and ii. a lower platen coupled to the upper platen, the lower platen having a second aperture substantially concentric with the first aperture; b. a chamber housing comprising: i. a second sealing surface; ii. an inlet coupled to the region for holding the semiconductor substrate; iii. and an outlet coupled to region for holding the semiconductor substrate; and c. a single mechanical drive mechanism having a single pressure source for forming and maintaining a wafer cavity containing the region for holding the semiconductor substrate, the single mechanical drive mechanism coupling the platen to the chamber housing and configured (i) to separate the first sealing surface from the second sealing surface for loading of the semiconductor substrate and (ii) to cause the first sealing surface and the second sealing surface to contact, thus forming and maintaining the wafer cavity during high pressure processing; d. a spacer, wherein the first sealing surface and the second sealing surface both seal to the spacer; e. a pedestal having a neck coupled to an upper portion, the neck slidably mounted within the second aperture, the upper portion sized to fit within the first aperture to form a part of the region for holding the semiconductor substrate; and f. a first piston coupled to the neck and configured to slide the neck within the second aperture, thereby extending the upper portion from the upper platen and moving the upper portion into the upper platen. 14. The system of claim 13, wherein the single mechanical drive mechanism comprises a second piston having a hollow neck containing the first piston. 15. The system of claim 13, wherein the upper platen has an upper surface containing a vacuum groove. 16. The system of claim 15, wherein the vacuum groove is coupled to a vacuum port. 17. The system of claim 16, wherein the upper surface further comprises an o-ring groove, the o-ring groove and vacuum groove together forming a vacuum chuck. 18. The system of claim 13, further comprising: a. a supercritical condition generator coupled to the inlet and the outlet; and b. a chemical agent and rinse agent supply arrangement coupled to the inlet. 19. The system of claim 18, wherein the supercritical condition generator comprises: a. a first pump; b. a supply vessel coupled to the first pump; and c. a heater coupling the supply vessel to the inlet. 20. The system of claim 19, further comprising a circulation loop coupled to the inlet and the outlet, the circulation loop comprising a second pump and a filter. 21. The system of claim 20, further comprising a return gas arrangement coupling the outlet to the supercritical condition generator. 22. The system of claim 21, wherein the return gas arrangement comprises a separating vessel. 23. The system of claim 22, wherein the return gas arrangement further comprises a liquifying/purifying arrangement. 24. The system of claim 23, wherein the supply vessel contains carbon dioxide.
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