초록 ▼

Methods for preparing a semiconductor assembly are disclosed. In an implementation, the technique includes providing a support substrate and a bonding surface thereon, providing a donor substrate having a weakened zone that defines a useful layer and a bonding surface on the useful layer, and provid

Methods for preparing a semiconductor assembly are disclosed. In an implementation, the technique includes providing a support substrate and a bonding surface thereon, providing a donor substrate having a weakened zone that defines a useful layer and a bonding surface on the useful layer, and providing an interface layer of a predetermined material on the bonding surface of either the support substrate or the useful layer to provide a bonding surface thereon. The method also includes molecularly bonding the bonding surface of the interface layer to the bonding surface of the other of the support substrate or the useful layer to form a separable bonding interface therebetween, and to thus form the semiconductor assembly, and heat treating the semiconductor assembly to a temperature of at least 1000 to 1100째 C. without substantially increasing molecular bonding between the bonding surface of the interface layer and the bonding surface of the other of the support substrate or the useful layer, so that the separable bonding interface maintains a sufficiently weak bond that can later be overcome by applying stresses to detach the useful layer from the donor substrate.

대표청구항 ▼

What is claimed is: 1. A method for preparing a semiconductor assembly, which comprises: providing a support substrate having a surface thereon; providing a donor substrate having a weakened zone that defines a useful layer and having a surface on the useful layer; providing an interface layer of a

What is claimed is: 1. A method for preparing a semiconductor assembly, which comprises: providing a support substrate having a surface thereon; providing a donor substrate having a weakened zone that defines a useful layer and having a surface on the useful layer; providing an interface layer of a predetermined material on the surface of either the support substrate or the useful layer to provide a bonding surface thereon; molecularly bonding the bonding surface of the interface layer to the surface of the support substrate or the surface of the useful layer to form a separable bonding interface therebetween, and to thus form the semiconductor assembly; and heat treating the semiconductor assembly to a temperature of at least 1000째 C. to 1100째 C. without substantially increasing molecular bonding between the bonding surface of the interface layer and the surface of the support substrate or the surface of the useful layer so that the separable bonding interface maintains a sufficiently weak bond that can later be overcome by applying stresses to detach the useful layer from the donor substrate. 2. The method of claim 1, which further comprises detaching the donor substrate from the useful layer along the weakened zone after the heat treating. 3. The method of claim 2, further comprising depositing a stack of materials on the useful layer after the detaching. 4. The method of claim 2, which further comprises detaching the useful layer by applying a mechanical stress to the semiconductor assembly. 5. The method of claim 1, wherein the support substrate is made of at least one of polycrystalline silicon carbide, monocrystalline silicon carbide, or sapphire. 6. The method of claim 5, wherein the interface layer is made of at least one of silicon oxide or silicon nitride. 7. The method of claim 1, wherein or the useful layer is a germination layer for epitaxially growing a substrate. 8. The method of claim 1, wherein the useful layer is made of monocrystalline silicon carbide. 9. The method of claim 8, which further comprises applying a stress to detach the useful layer of monocrystalline silicon carbide from the support substrate at the separable interface; and epitaxially growing at least one substrate layer on a surface of the useful layer. 10. The method of claim 9, wherein the epitaxially grown substrate layer is made of a metallic nitride. 11. The method of claim 1, wherein an interface layer is provided on both the surfaces of the support substrate and useful layer. 12. The method of claim 11, wherein the material of each interface layer has a sufficiently low potential for chemically reacting with the other interface layer such that heat treating the semiconductor assembly at the high temperature does not increase molecular bonding so that the support substrate and the useful layer can be subsequently separated at the separable bonding interface by applying stresses to the assembly. 13. The method of claim 12, wherein the low potential for a chemical reaction between the interface materials is a function of a weak intrinsic mutual chemical affinity of the interface materials. 14. The method of claim 12, wherein the low potential for a chemical reaction between the interface materials is a function of a low creep characteristic of at least one of the interface materials. 15. The method of claim 12, wherein the interface materials are different. 16. The method of claim 15, wherein the first interface material is at least one of an oxide or nitride, and the second interface material comprises a carbide. 17. The method of claim 16, wherein the nitride is monocrystalline. 18. The method of claim 16, wherein the oxide is silicon oxide. 19. The method of claim 12, wherein both interface materials are nitrides. 20. The method of claim 12, wherein one of the two interface materials is a nitride and the other is an oxide. 21. The method of claim 12, wherein at least one of the interface materials has an intrinsically rough surface. 22. The method of claim 21, which further comprises forming the intrinsically rough interface material by depositing an interface material on a less rough surface. 23. The method of claim 12, wherein the semiconductor assembly comprises a silicon carbide substrate, a useful layer made of silicon carbide, and an interface layer of silicon oxide or silicon nitride. 24. The method of claim 1, wherein at least one of the surfaces is a monocrystalline material having a main crystallographic plane that is positioned at an inclination relative to the plane of its surface, and with the inclination of the main crystallographic plane intrinsically forming a sufficiently weak bond to facilitate and allow the detaching of the useful layer. 25. The method of claim 24, wherein the inclination of the main crystallographic plane is between about 3째 and about 8째.