Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum envir
Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum environment while providing a gas, such as noble gases, hydrogen gas, other reducing gases, nitrogen gas, other non-reactive gases, and combinations thereof. In another embodiment, annealing in a plasma chamber comprises plasma annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, and combinations thereof.
대표청구항▼
The invention claimed is: 1. A method for processing a planarized substrate comprising exposed dielectric portions and exposed copper portions, comprising: annealing the exposed dielectric portions and exposed copper portions of the substrate at a reduced pressure while providing a gas selected fro
The invention claimed is: 1. A method for processing a planarized substrate comprising exposed dielectric portions and exposed copper portions, comprising: annealing the exposed dielectric portions and exposed copper portions of the substrate at a reduced pressure while providing a gas selected from the group consisting of noble gases, hydrogen gas, other reducing gases, nitrogen gas, other non-reactive gases, and combinations thereof, wherein the gas is a combination of gases comprising at least about 1% to about 10% reducing gas by volume; and depositing a capping layer selectively over the exposed copper portions of the substrate by electroless deposition. 2. The method of claim 1, wherein the capping layer comprises a material selected from the group consisting of: binary compounds of cobalt and phosphorus, cobalt and boron, and nickel and boron; ternary compounds of cobalt, tungsten, and phosphorus, cobalt, tungsten, and boron, and nickel, tungsten and boron; quaternary compounds of cobalt, tungsten, phosphorus, and boron; and combinations thereof. 3. The method of claim 1, wherein the reducing gas is hydrogen gas. 4. The method of claim 1, wherein annealing comprises heating the substrate to a substrate temperature between about 200째 C. and about 600째 C. 5. The method of claim 1, wherein annealing comprises heating the substrate to a substrate temperature between about 300째 C. and about 400째 C. 6. The method of claim 1, wherein annealing comprises heating the substrate to a substrate temperature between about 325째 C. and about 375째 C. 7. The method of claim 1, wherein annealing comprises plasma annealing the substrate in a plasma. 8. The method of claim 1, wherein annealing comprises plasma annealing the substrate in a hydrogen plasma. 9. The method of claim 4, wherein the step of heating the substrate further comprises: removing organic contaminants from the exposed dielectric and copper portions on the substrate. 10. The method of claim 4, wherein the step of heating the substrate further comprises: removing corrosion inhibitors from the exposed dielectric and copper portions on the substrate. 11. The method of claim 4, wherein the substrate is heated with a resistive heater. 12. The method of claim 4, wherein the substrate is heated with a lamp. 13. The method of claim 4, wherein the substrate is heated with a lamp providing a certain wavelength or wavelengths of radiation to break the bonds of contaminants on the first material deposited on the substrate. 14. The method of claim 2, wherein the pressure of the annealing step is controlled below about 10 Torr. 15. The method of claim 2, wherein the pressure of the annealing step is controlled between about 3 Torr and about 10 Torr. 16. The method of claim 7, wherein the temperature of the plasma annealing step is controlled at about 400 degrees Celsius. 17. The method of claim 1, wherein the noble gas includes argon and helium. 18. The method of claim 17, wherein the gas provided for annealing is a gas mixture including argon gas and hydrogen gas. 19. The method of claim 1, wherein the gas provided for annealing is a gas mixture including the noble gas and the hydrogen gas having a volume ratio between about 99:1 and about 90:10.
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