초록 ▼

There is provided a metal/ceramic bonding substrate capable of preventing the reverse thereof from greatly warping so as to be concave even if it is heated for soldering. In the metal/ceramic bonding substrate, a metal circuit plate 12 is bonded to one side of a ceramic substrate 10, and a heat sink

There is provided a metal/ceramic bonding substrate capable of preventing the reverse thereof from greatly warping so as to be concave even if it is heated for soldering. In the metal/ceramic bonding substrate, a metal circuit plate 12 is bonded to one side of a ceramic substrate 10, and a heat sink plate (metal base plate) 14 is bonded to the other side thereof. On the heat sink plate 14, a work-hardened layer 16 is formed by shot peening. On the metal circuit plate 12 of the metal/ceramic bonding substrate, semiconductor chips (Si chips) 18 are soldered (solder layer 20). Then, a power module is produced by a predetermined process. On the reverse (the side of the work-hardened layer 16) of the power module, a radiating fin 26 is mounted via a thermal grease 24 by means of screws 22 or the like.

대표청구항 ▼

What is claimed is: 1. A metal/ceramic bonding substrate comprising: a ceramic substrate; a metal circuit plate bonded to one side of said ceramic substrate; and a heat sink plate of a metal, one surface of the heat sink plate being bonded to the other side of said ceramic substrate, and another su

What is claimed is: 1. A metal/ceramic bonding substrate comprising: a ceramic substrate; a metal circuit plate bonded to one side of said ceramic substrate; and a heat sink plate of a metal, one surface of the heat sink plate being bonded to the other side of said ceramic substrate, and another surface of the heat sink plate comprising a work-hardened surface of said metal of said heat sink plate for mounting thereon a radiating or cooling means. 2. A metal/ceramic bonding substrate as set forth in claim 1, wherein said work-hardened layer is formed by shot peening. 3. A metal/ceramic bonding substrate as set forth in claim 1, wherein a warpage of the another surface of said heat sink plate is-200 micrometers or more, assuming that said warpage is a difference in height between a center and edge of the another surface of said heat sink plate and is positive (+) when the other side of said heat sink plate warps so as to be convex and negative (-) when the another surface of said heat sink plate warps so as to be concave. 4. A metal/ceramic bonding substrate as set forth in claim 1, wherein a warpage of the another surface of said heat sink plate is in the range of from-100 to +500 micrometers, assuming that said warpage is a difference in height between a center and edge of the another surface of said heat sink plate and is positive (+) when the another surface of said heat sink plate warps so as to be convex and negative (-) when the another surface of said heat sink plate warps so as to be concave. 5. A metal/ceramic bonding substrate as set forth in claim 1, wherein a warpage of the another surface of said heat sink plate is in the range of from 0 to +200 micrometers, assuming that said warpage is a difference in height between a center and edge of the another surface of said heat sink plate and is positive (+) when the another surface of said heat sink plate warps so as to be convex and negative (-) when the another surface of said heat sink plate warps so as to be concave. 6. A metal/ceramic bonding substrate as set forth in claim 1, wherein said metal circuit plate and said heat sink plate contact said ceramic substrate to be bonded directly to said ceramic substrate. 7. A metal/ceramic bonding substrate as set forth in claim 6, wherein said metal is aluminum or an aluminum alloy. 8. A power module comprising: a metal/ceramic bonding substrate as set forth in claim 1; and a semiconductor chip soldered on said metal circuit plate of said metal/ceramic bonding substrate. 9. A metal/ceramic bonding substrate as set forth in claim 1, wherein said metal is aluminum or an aluminum alloy. 10. A metal/ceramic bonding substrate as set forth in claim 1, wherein said metal is copper.