초록 ▼

A method for forming dislocation-free strained silicon thin film includes the step of providing two curved silicon substrates. One substrate is curved by the presence of silicon dioxide on a back surface. The other substrate is curved by the presence of a silicon nitride layer. One of the substrat

A method for forming dislocation-free strained silicon thin film includes the step of providing two curved silicon substrates. One substrate is curved by the presence of silicon dioxide on a back surface. The other substrate is curved by the presence of a silicon nitride layer. One of the substrates is subject to hydrogen implantation and the two substrates are bonded to one another in an annealing process. The two substrates are separated, thereby leaving a layer of strained silicon on a front side of one of the substrates. A back side layer of silicon dioxide or silicon nitride is then removed to restore the substrate to a substantially planar state. The method may be employed to form dislocation-free strained silicon thin films. The films may be under tensile or compressive strain.

대표청구항 ▼

What is claimed is: 1. A method of forming thin films comprising: providing a first substrate having a first side and a second side; forming a silicon dioxide containing layer on the second side of the first substrate, the silicon dioxide containing layer causing the first substrate to transform in

What is claimed is: 1. A method of forming thin films comprising: providing a first substrate having a first side and a second side; forming a silicon dioxide containing layer on the second side of the first substrate, the silicon dioxide containing layer causing the first substrate to transform into a curved shape; providing a second substrate having a first side and a second side; forming a silicon nitride containing layer on the second side of the second substrate, the silicon nitride containing layer causing the second substrate to transform into a curved shape; subjecting the first side of the second substrate to hydrogen ion implantation; bonding the first side of the first substrate to the first side of the second substrate in an annealing process; and separating the second substrate from the first substrate, wherein a layer of strained silicon remains on the first side of the first substrate. 2. The method of claim 1, further comprising the step of removing the silicon dioxide containing layer on the second side of the first substrate, wherein removal of the silicon dioxide containing layer returns the first substrate to a substantially planar state. 3. The method of claim 1, wherein the silicon dioxide containing layer on the second side of the first substrate is patterned. 4. The method of claim 1, wherein the second substrate has a smaller thickness than the first substrate. 5. The method of claim 1, wherein the degree of curvature of the second substrate is greater than the degree of curvature of the first substrate. 6. The method of claim 1, wherein prior to bonding, the first side of the first substrate and the first side of the second substrate include a silicon dioxide containing layer. 7. The method of claim 1, further comprising the step of subjecting the first substrate to a second anneal process. 8. The method of claim 7, further comprising the step of subjecting the exposed layer of strained silicon to a chemical mechanical polishing process. 9. The method of claim 1, further comprising the steps of removing the silicon nitride containing layer on the second side of the second substrate. 10. The method of claim 9, further comprising the step of subjecting the second side of the second substrate to a chemical mechanical polishing process. 11. The method of claim 1, wherein the first side of the second substrate includes a SiGe etch stop layer and a epitaxially grown silicon layer on top of the SiGe etch layer.