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The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glas

The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the CTEs of the semiconductor and glass or glass-ceramic selected such that the first layer is under tensile strain. The present invention also relates to methods for making strained semiconductor-on-insulator layers.

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What is claimed is: 1. A semiconductor-on-insulator structure comprising: first and second layers which are attached to one another either directly or through one or more intermediate layers, wherein the first layer comprises a substantially single crystal semiconductor material; the second layer c

What is claimed is: 1. A semiconductor-on-insulator structure comprising: first and second layers which are attached to one another either directly or through one or more intermediate layers, wherein the first layer comprises a substantially single crystal semiconductor material; the second layer comprises a glass or a glass-ceramic, having: (i) first and second substantially parallel faces separated by a distance D2, the first face being closer to the first layer than the second face; (ii) a reference surface which 1) is within the second layer, 2) is substantially parallel to the first face, and 3) is separated from that face by a distance D 2/2; (iii) positive ions of one or more types, each type of positive ion having a reference concentration Ci/Ref at the reference surface; and (iv) a region (a positive ion depletion region) which begins at the first face and extends toward the reference surface in which the concentration of at least one type of positive ion is depleted relative to the reference concentration Ci/Ref for that ion; and the CTE(25-300째 C.) of the glass or glass-ceramic is less positive than the CTE(25째 C.) of the semiconductor material. 2. The semiconductor-on-insulator structure of claim 1, wherein the CTE(25-300째 C.) of the glass or glass-ceramic is at least 3횞10-7/째 C. less positive than the CTE(25째 C.) of the semiconductor material. 3. The semiconductor-on-insulator structure of claim 1, wherein the CTE(25-300째 C.) of the glass or glass-ceramic is at least 5횞10-7/째 C. less positive than the CTE(25째 C.) of the semiconductor material. 4. The semiconductor-on-insulator structure of claim 1, wherein the first layer is under tensile strain at 25째 C. 5. The semiconductor-on-insulator structure of claim 1, wherein the first layer has a bulk mobility that is at least about 105% of the bulk mobility of the semiconductor material in a substantially unstrained state. 6. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic has a strain point of less than 1050째 C. 7. The semiconductor-on-insulator structure of claim 1, wherein the semiconductor material is a silicon-based semiconductor material. 8. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic has a CTE(25-300째 C.) of no more positive than about 22횞10-7/째 C. 9. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic has a CTE(25-300째 C.) of no more positive than about 20횞10-7/째 C. 10. The semiconductor-on-insulator structure of claim 1, wherein the difference between the CTE(25째 C.) of the semiconductor material and the CTE(25-300째 C.) of the glass or glass-ceramic is no greater than about 30횞10-7/째 C. 11. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic is selected from the group consisting of a aluminosilicate glass; a borosilicate glass; an aluminoborosilicate glass; and a rare earth aluminosilicate glass. 12. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic is an aluminum phosphorus silicate glass. 13. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic includes alkali ions or alkali earth ions. 14. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic is a glass-ceramic having a spinel, β-quartz, or β-spodumene crystal phase. 15. The semiconductor-on-insulator structure of claim 1, wherein the first layer was bonded to the second layer at a temperature Tbond, and wherein the semiconductor-on-insulator structure has a use temperature Tuse, and wherein is greater than zero. 16. The semiconductor-on-insulator structure of claim 1, wherein the first layer was bonded to the second layer at a temperature Tbond, and wherein is greater than zero. 17. The semiconductor-on-insulator structure of claim 1, wherein the bond strength between the first and second layers is at least 8 J/m2. 18. The semiconductor-on-insulator structure of claim 1, wherein: the region which begins at the first face and extends toward the reference surface has a distal edge, and the second layer further has (v) a region (the pile-up region) in the vicinity of the distal edge in which the concentration of at least one type of positive ion is enhanced relative to Ci/Ref for that ion. 19. The semiconductor-on-insulator structure of claim 1, wherein the glass or the glass-ceramic comprises, and the positive ion depletion region is depleted of one or more of the alkali ions and the alkaline earth ions. 20. The semiconductor-on-insulator structure of claim 1, wherein the glass or the glass-ceramic comprises positive ions of one or more types, wherein the sum of lithium, sodium and potassium ions in the glass or glass-ceramic on an oxide basis is less than about 2 weight percent. 21. The semiconductor-on-insulator structure of claim 1, wherein the first layer has a maximum dimension greater than 10 cm. 22. The semiconductor-on-insulator structure of claim 1, wherein at least part of the structure comprises, in order: the semiconductor material; the semiconductor material with an enhanced oxygen content; the glass or glass ceramic material with a reduced positive ion concentration for at least one type of positive ion; the glass or glass ceramic material with an enhanced positive ion concentration for at least one type of positive ion; and the glass or glass ceramic. 23. The semiconductor-on-insulator structure of claim 1, wherein the first layer has a thickness of no greater than about 10 μm. 24. A liquid crystal display comprising a patterned display element including the semiconductor-on-insulator structure of claim 1. 25. A thin film transistor comprising a patterned element comprising the semiconductor-on-insulator structure of claim 1. 26. A semiconductor-on-insulator structure comprising: first and second layers which are attached to one another either directly or through one or more intermediate layers, wherein: the first layer comprises a substantially single crystal semiconductor material; the second layer comprises a glass or a glass-ceramic; the semiconductor-on-insulator structure has a use temperature Tuse, such that the following expression is true: is greater than zero. 27. The semiconductor-on-insulator structure of claim 26, wherein is greater than 1횞10-4. 28. The semiconductor-on-insulator structure of claim 26, wherein is greater than zero. 29. The semiconductor-on-insulator structure of claim 26, wherein is greater than 1횞10-4. 30. A method for producing a semiconductor-on-insulator structure comprising: (A) providing first and second substrates wherein: (1) the first substrate comprises a first external surface for bonding to the second substrate (the first bonding surface), a second external surface for applying force to the first substrate (the first force-applying surface), and an internal zone for separating the first substrate into a first part and a second part (the separation zone), wherein: (a) the first bonding surface, the first force-applying surface, and the separation zone are substantially parallel to one another; (b) the second part is between the separation zone and the first bonding surface; and (c) the first substrate comprises a substantially single-crystal semiconductor material; and (2) the second substrate comprises two external surfaces, one for bonding to the first substrate (the second bonding surface) and another for applying force to the second substrate (the second force-applying surface), wherein: (a) the second bonding surface and the second force-applying surface are substantially parallel to one another and are separated from one another by a distance D2; and (b) the second substrate comprises a glass or a glass-ceramic; (B) bringing the first and second bonding surfaces into contact; (C) for a period of time sufficient for the first and second substrates to bond to one another at the first and second bonding surfaces, simultaneously: (1) applying force to the first and second force-applying surfaces to press the first and second bonding surfaces together; (2) subjecting the first and second substrates to an electric field which is characterized by first and second voltages V1 and V2 at the first and second force-applying surfaces, respectively, said voltages being uniform at those surfaces with V1 being higher than V2 so that the electric field is directed from the first substrate to the second substrate; and (3) heating the first and second substrates, said heating being characterized by first and second temperatures T1 and T2 at the first and second force-applying surfaces, respectively, said temperatures being uniform at those surfaces and being selected so that upon cooling to a common temperature, the first and second substrates undergo differential contraction to thereby weaken the first substrate at the separation zone; and (D) cooling the bonded first and second substrates and separating the first and second parts at the separation zone, wherein T1, T2, the CTE of the semiconductor material and the CTE of the glass or glass-ceramic material are chosen such that the semiconductor material is under tensile strain at 25째 C. 31. The method of claim 30, wherein the CTE(25-300째 C.) of the glass or glass-ceramic is less positive than the CTE(25째 C.) of the semiconductor material. 32. The method of claim 30, wherein: the semiconductor-on-insulator structure has a use temperature Tuse, such that the following expression holds true: is greater than zero. 33. The method of claim 30, wherein the glass or glass-ceramic comprises positive ions which during step (C), move within the second substrate in a direction away from the second bonding surface and towards the second force-applying surface. 34. The method of claim 30, wherein the glass or glass ceramic comprises non-bridging oxygens which during step (C), move within the second substrate in a direction away from the second bonding surface and towards the second force-applying surface. 35. The method of claim 30, wherein during step (C), the first and second substrates, at least in part, bond to one another through the reaction of the semiconductor material of the first substrate with oxygen atoms originating from the second substrate. 36. The method of claim 30, wherein the separation zone is formed by hydrogen ion implantation. 37. The method of claim 30, wherein V1 and V2 satisfy the relationship: 100 V/cm≦(V1-V2)/D≦40 kV/cm, where D is the sum of the thicknesses of the first substrate and the second substrate. 38. The method of claim 30, wherein T1, T2 and the strain point Ts of the glass or glass-ceramic satisfy the relationships: Ts-350째 C.≦T1 ≦Ts+350째 C.; and Ts-350째 C.≦T2≦Ts+350째 C. 39. The method of claim 30, wherein 300째 C.≦T1≦1000째 C.; and 300째 C.≦T2≦1000째 C. 40. A semiconductor-on-insulator structure comprising: first and second layers which are attached to one another either directly or through one or more intermediate layers, wherein the first layer comprises a substantially single crystal semiconductor material; the second layer comprises a glass or a glass-ceramic comprising positive ions of one or more types, wherein a sum of lithium, sodium and potassium ions in the glass or glass-ceramic on an oxide basis is less than about 2 weight percent; and the CTE(25-300째 C.) of the glass or glass-ceramic is less positive than the CTE(25째 C.) of the semiconductor material. 41. A semiconductor-on-insulator structure comprising first and second layers which are attached to one another either directly or through one or more intermediate layers, wherein the first layer comprises a substantially single crystal semiconductor material; the second layer comprises a glass or a glass-ceramic; and at least part of the structure comprises, in order: the semiconductor material; the semiconductor material with an enhanced oxygen content; the glass or glass ceramic material with a reduced positive ion concentration for at least one type of positive ion; the glass or glass ceramic material with an enhanced positive ion concentration for at least one type of positive ion; and the glass or glass ceramic. 42. A semiconductor-on-insulator structure comprising first and second layers which are attached to one another either directly or through one or more intermediate layers, wherein: the first layer comprises a substantially single crystal semiconductor material; the second layer comprises a glass or a glass-ceramic; and the first layer was bonded to the second layer at a temperature Tbond, and wherein the semiconductor-on-insulator structure has a use temperature Tuse, such that the following expression holds true: is greater than zero.