초록 ▼

A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b a

A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201a at a device to be measured 201, whereas bumps 105b are formed at the surface of the film 105 located toward the device to be measured 201, at positions that face opposite the plurality of electrodes 201a at the device to be measured 201 and electrodes 105c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103c at the circuit board 103. The bumps 105b formed at one surface of the film 105 and the electrodes 105c formed at another surface of the film 105 are electrically connected with each other via through holes 105d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing semiconductor devices, the method comprising: providing a semiconductor wafer with a wafer surface having a plurality of circuit elements formed thereon; forming on the wafer surface a plurality of electrodes connected with the circuit elements; coa

What is claimed is: 1. A method for manufacturing semiconductor devices, the method comprising: providing a semiconductor wafer with a wafer surface having a plurality of circuit elements formed thereon; forming on the wafer surface a plurality of electrodes connected with the circuit elements; coating substantially the whole wafer surface with a resin so as to leave exposed the electrodes, said resin forming an outer layer; inserting the resin-coated wafer into a burn-in apparatus; testing the circuit elements for electrical functions in the burn-in apparatus through the electrodes; and forming a plurality of packaged semiconductor devices by dividing the wafer after said step of coating said wafer with said outer layer. 2. A method according to claim 1, wherein said dividing includes dividing the resin-coated wafer into the plurality of semiconductor devices after said testing. 3. A method according to claim 2, further comprising: mounting the resin-coated wafer on a circuit board by interposing an elastic sheet between the resin-coated wafer and the circuit board, including electrically connecting wiring circuits on the circuit board to the plurality of electrodes with conductive elastic portions of elastic sheet. 4. A method according to claim 3, further comprising: providing over the resin-coated wafer a holding plate having a through hole; and pressing the resin-coated wafer on the circuit board with the holding plate. 5. A method according to claim 2, further comprising: mounting the resin-coated wafer on a circuit board by interposing between the resin-coated wafer and the circuit board a film having bump electrodes, such that the bump electrodes electrically connect wiring circuits on the circuit board with the plurality of electrodes. 6. A method for manufacturing semiconductor devices, the method comprising: providing a semiconductor wafer having a first surface and a second surface, the first surface being opposite to the second surface, wherein the first surface has a plurality of circuit elements formed thereon; forming a plurality of electrodes on the first surface, the electrodes being connected with the circuit elements; coating substantially the whole first surface of the wafer with a resin so as to leave exposed the electrodes through the resin, said resin forming an outer layer; inserting the wafer into a burn-in apparatus with the first surface coated with the resin; testing the circuit elements for electrical functions in the burn-in apparatus through the electrodes; and forming a plurality of packaged semiconductor devices by dividing the wafer after said step of coating said wafer with said outer layer. 7. A method according to claim 6, wherein said dividing includes dividing the resin-coated wafer into the plurality of semiconductor devices after said testing. 8. A method according to claim 7, further comprising: mounting the resin-coated wafer on a circuit board by interposing an elastic sheet between the resin-coated wafer and the circuit board, including electrically connecting wiring circuits on the circuit board to the plurality of electrodes with conductive elastic portions of elastic sheet. 9. A method according to claim 8, further comprising: providing over the resin-coated wafer a holding plate having a through hole; and pressing the resin-coated wafer on the circuit board with the holding plate. 10. A method according to claim 7, further comprising: mounting the resin-coated wafer on a circuit board by interposing between the resin-coated wafer and the circuit board a film having bump electrodes, such that the bump electrodes electrically connect wiring circuits on the circuit board with the plurality of electrodes. 11. A method of manufacturing semiconductor devices comprising: Providing a semiconductor wafer having a plurality of electrodes on a surface thereof, the surface of the semiconductor substrate being covered by a resin forming an outer layer so that only the electrodes are exposed from the resin; Subjecting the resin covered wafer to a burn-in process; Testing the resin covered wafer during the burn-in process; and Forming a plurality of packaged semiconductor devices by dividing the tested wafer after covering said wafer with said resin forming said outer layer. 12. A method of manufacturing semiconductor devices according to claim 10, wherein the resin covered wafer is mounted on a circuit board during the burn-in process. 13. A method of manufacturing semiconductor devices according to claim 11, wherein the resin covered wafer is mounted on the circuit board via an elastic sheet. 14. A method of manufacturing semiconductor devices according to claim 11, wherein the resin covered wafer is mounted on the circuit board via a film. 15. A method of manufacturing semiconductor devices according to claim 11, wherein the resin covered wafer and the circuit board are fixed by a positioning plate. 16. A method of manufacturing semiconductor devices according to claim 14, wherein the resin covered wafer is fixed by a holding plate. 17. A method of manufacturing semiconductor devices according to claim 10, wherein each of the packaged semiconductor devices has the electrodes.