Method for manufacturing single-sided sputtered magnetic recording disks
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B05D-005/12
B24B-007/19
B24B-007/00
G11B-005/71
G11B-003/70
G11B-003/00
출원번호
US-0195912
(2005-08-02)
등록번호
US-7267841
(2007-09-11)
발명자
/ 주소
Kim,Kwang Kon
Clasara,Ramon
출원인 / 주소
Maxtor Corporation
대리인 / 주소
Sheridan Ross P.C.
인용정보
피인용 횟수 :
1인용 특허 :
77
초록▼
An information-storage media is provided that includes: (a) a substrate disk 312 having first and second opposing surfaces; (b) a first interface layer 304 on the first surface, the first interface layer having a first thickness; (c) a second interface layer 308 on the second surface, the second
An information-storage media is provided that includes: (a) a substrate disk 312 having first and second opposing surfaces; (b) a first interface layer 304 on the first surface, the first interface layer having a first thickness; (c) a second interface layer 308 on the second surface, the second interface layer having a second thickness, wherein the first and second interface layers have a different chemical composition than the substrate disk; and (d) an information-storage layer 412 adjacent to one or both of the interface layers. The first and second thicknesses are different to provide an unequal stress distribution across the cross-section of the media.
대표청구항▼
What is claimed is: 1. A method for manufacturing a single-sided information-storage media, comprising: providing first and second intermediate structures, each of the first and second intermediate structures comprising a substrate disk and upper and lower interface layers on opposing upper and low
What is claimed is: 1. A method for manufacturing a single-sided information-storage media, comprising: providing first and second intermediate structures, each of the first and second intermediate structures comprising a substrate disk and upper and lower interface layers on opposing upper and lower sides, respectively, of each substrate disk; placing the lower interface layer of the first intermediate structure adjacent to the lower interface layer of the second intermediate structure, such that the first and second intermediate structures are in a stacked relationship; and simultaneously removing at least a portion of each of the upper interface layers of the first and second intermediate structures while in the stacked relationship to provide, for each of the first and second intermediate structures, upper and lower interface layers having different thicknesses. 2. The method of claim 1, wherein a flatness value of the first and second intermediate structures prior to the simultaneously removing step is less than a flatness value of the first and second intermediate structures after the simultaneously removing step. 3. The method of claim 1, wherein a flatness distribution of the first and second intermediate structures prior to the simultaneously removing step is different from a flatness distribution of the first and second intermediate structures after the simultaneously removing step. 4. The method of claim 1, further comprising: depositing an information-storage layer adjacent to only one of the first and second interface layers to form a second intermediate structure. 5. The method of claim 4, wherein a flatness value of the second intermediate structure is less than a flatness value of the intermediate structure. 6. The method of claim 4, further comprising: depositing an underlayer between the one of the first and second interface layer and the information-storage layer. 7. The method of claim 6, further comprising: depositing an overcoat layer on the information-storage layer. 8. The method of claim 1, wherein, after the simultaneously removing step, a compressive stress in the first interface layer is different from a compressive stress in the second interface layer. 9. The method of claim 1, wherein, after the simultaneously removing step, a tensile stress in the first interface layer is different from a tensile stress in the second interface layer. 10. The method of claim 4, wherein the information-storage layer is a ferromagnetic material. 11. An information-storage media manufactured by a method comprising: providing first and second disks, each of the first and second disks comprising upper and lower interface layers on opposing upper and lower sides, respectively, of each substrate disk; placing the lower interface layer of the first disk adjacent to the lower interface layer of the second substrate disk, such that the first and second disks are in a stacked relationship; and simultaneously removing at least a portion of each of the upper interface layers of the first and second disks while in the stacked relationship to provide, for each of the first and second disks, upper and lower interface layers having different thicknesses. 12. The media of claim 11, wherein a flatness of the first and second disks prior to the simultaneously removing step is less than a flatness of the first and second disks after the simultaneously removing step. 13. The media of claim 11, wherein a flatness distribution of the first and second disks prior to the simultaneously removing step is different from a flatness distribution of the first and second disks after the simultaneously removing step. 14. The media of claim 11, wherein each of the first and second disks comprise an information-storage layer adjacent to only one of the first and second interface layers. 15. The media of claim 14, wherein each of the first and second disks comprise an underlayer between the one of the first and second interface layer and the information-storage layer. 16. The media of claim 15, wherein each of the first and second disks comprise an overcoat layer on the information-storage layer. 17. The media of claim 11, wherein, after the simultaneously removing step, a compressive stress in the first interface layer is different from a compressive stress in the second interface layer. 18. The media of claim 11, wherein, after the simultaneously removing step, a tensile stress in the first interface layer is different from a tensile stress in the second interface layer. 19. The media of claim 14, wherein the information-storage layer is a ferromagnetic material. 20. An information-storage media manufactured by a method comprising: providing first and second disks, each of the first and second disks comprising upper and lower interface layers on opposing upper and lower sides, respectively, of each substrate disk; placing the lower interface layer of the first disk adjacent to the lower interface layer of the second substrate disk, such that the first and second disks are in a stacked relationship; and simultaneously removing at least a portion of each of the upper interface layers of the first and second disks while in the stacked relationship, wherein a flatness of the first and second disks prior to the simultaneously removing step is less than a flatness of the first and second disks after the simultaneously removing step. 21. The media of claim 20, wherein, in each of the first and second disks, the upper and lower interface layers have different thicknesses. 22. The media of claim 20, wherein a flatness distribution of the first and second disks prior to the simultaneously removing step is different from a flatness distribution of the first and second disks after the simultaneously removing step. 23. The media of claim 20, wherein each of the first and second disks comprise an information-storage layer adjacent to only one of the first and second interface layers. 24. The media of claim 23, wherein each of the first and second disks comprise an underlayer between the one of the first and second interface layer and the information-storage layer. 25. The media of claim 24, wherein each of the first and second disks comprise an overcoat layer on the information-storage layer. 26. The media of claim 20, wherein, after the simultaneously removing step, a compressive stress in the first interface layer is different from a compressive stress in the second interface layer. 27. The media of claim 20, wherein, after the simultaneously removing step, a tensile stress in the first interface layer is different from a tensile stress in the second interface layer. 28. The media of claim 23, wherein the information-storage layer is a ferromagnetic material.
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