초록 ▼

Embodiments of methods and apparatus for high temperature operation of electronics according to the invention are disclosed. One embodiment of the invention generally includes an integrated circuit package having a substrate. A plurality of integrated circuits are coupled to a surface of the substra

Embodiments of methods and apparatus for high temperature operation of electronics according to the invention are disclosed. One embodiment of the invention generally includes an integrated circuit package having a substrate. A plurality of integrated circuits are coupled to a surface of the substrate. A lid is positioned above the substrate facing the surface. One or more pieces of compliant and thermally conductive material are compressed between at least one of the integrated circuits and the lid. The lid defines in part an enclosed volume containing the compliant and thermally conductive material.

대표청구항 ▼

What is claimed is: 1. A method of operating an electronic device, comprising: providing in the device, a first set of one or more integrated circuits capable of operating at temperatures below a first temperature; providing in the device, a second set of one or more integrated circuits capable of

What is claimed is: 1. A method of operating an electronic device, comprising: providing in the device, a first set of one or more integrated circuits capable of operating at temperatures below a first temperature; providing in the device, a second set of one or more integrated circuits capable of operating at temperatures below a second temperature, where the second temperature is lower than the first temperature; coupling the second set of circuits to the first set of circuits; thermally coupling one or more active coolers to the second set of integrated circuits; and locating the device in an ambient temperature between the first temperature and the second temperature. 2. The method of claim 1 where the first set of circuits are formed of a silicon on sapphire material. 3. The method of claim 1 where the first set of circuits are formed of a silicon on insulator material. 4. The method of claim 1 where thermally coupling one or more active coolers to the second set of integrated circuits includes: for each integrated circuit in the second set, attaching a cold side of a peltier-type cooler to a die of the integrated circuit. 5. The method of claim 1 where thermally coupling one or more active coolers to the second set of integrated circuits includes: mounting the second set of integrated circuits inside a hermetically sealed package; compressing one or more pieces of compliant and thermally conductive material between at least one of the integrated circuits and a lid of the package; and actively cooling the lid of the package. 6. The method of claim 5, where the compliant and thermally conductive material is an expanded polytetraflouroethylene matrix containing boron nitride particles. 7. The method of claim 1 where the second set of integrated circuits include memory. 8. The method of claim 1 where the first set of integrated circuits include a processor. 9. The method of claim 1 where locating the device in an ambient temperature between the first temperature and the second temperature includes lowering the device into a well. 10. The method of claim 1 where the first set of integrated circuits include sensor electronics and the second set of integrated circuits include memory configured to store measurements processed by the sensor electronics. 11. The method of claim 1 where the second set of integrated circuits are formed of a bulk CMOS material. 12. An electronic device comprising: a first set of one or more integrated circuits formed of high temperature materials; a second set of one or more integrated circuits formed of low temperature materials coupled to receive information from the first set; and one or more active coolers thermally coupled to the second set of integrated circuits. 13. The device of claim 12 where the first set of circuits are formed of a silicon on sapphire material. 14. The device of claim 12 where the first set of circuits are formed of a silicon on insulator material. 15. The device of claim 12 where the active coolers include a peltier-type cooler. 16. The device of claim 12 further comprising: a hermetically sealed package surrounding the second set of circuits; one or more pieces of compliant and thermally conductive material compressed between at least one of the circuits in the second set and a lid of the package; and wherein the active coolers are thermally coupled to the lid. 17. The device of claim 16 where the compliant and thermally conductive material is an expanded polytetraflouroethylene matrix containing boron nitride particles. 18. The device of claim 12 where the second set of integrated circuits include memory. 19. The device of claim 12 where the first set of integrated circuits include a processor. 20. The device of claim 12 where the device is a downhole well tool. 21. The device of claim 12 where the first set of integrated circuits include sensor electronics and the second set of integrated circuits include memory configured to store measurements processed by the sensor electronics. 22. The system of claim 12 where the second set of integrated circuits are formed of a bulk CMOS material.