Method and apparatus of generating PDMAT precursor
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C30B-021/02
C30B-021/00
출원번호
US-0119681
(2005-05-02)
등록번호
US-7270709
(2007-09-18)
발명자
/ 주소
Chen,Ling
Ku,Vincent W.
Chung,Hua
Marcadal,Christophe
Ganguli,Seshadri
Lin,Jenny
Wu,Dien Yeh
Ouye,Alan
Chang,Mei
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson & Sheridan LLP
인용정보
피인용 횟수 :
30인용 특허 :
106
초록▼
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
대표청구항▼
What is claimed is: 1. An apparatus for generating a chemical precursor used in a vapor deposition processing system, comprising: a canister having a sidewall, a top, and a bottom forming an interior volume; an inlet port and an outlet port in fluid communication with the interior volume; a plurali
What is claimed is: 1. An apparatus for generating a chemical precursor used in a vapor deposition processing system, comprising: a canister having a sidewall, a top, and a bottom forming an interior volume; an inlet port and an outlet port in fluid communication with the interior volume; a plurality of baffles within the interior volume; and a heater coupled to the canister, wherein the plurality of baffles form an extended mean flow path between the inlet port and the outlet port. 2. The apparatus of claim 1, wherein the plurality of baffles are coupled to the top of the canister. 3. The apparatus of claim 1, wherein the plurality of baffles are coupled to the bottom of the canister. 4. The apparatus of claim 1, wherein the heater is disposed proximate the sidewall of the canister. 5. The apparatus of claim 1, wherein the heater is disposed proximate the sidewall, the top, and the bottom of the canister. 6. The apparatus of claim 1, wherein the canister comprises a heat transfer medium within the interior volume. 7. The apparatus of claim 6, wherein the heat transfer medium is at least one of the plurality of baffles. 8. The apparatus of claim 6, wherein the heat transfer medium is a plurality of solid particles at least partially filling the interior volume. 9. The apparatus of claim 8, wherein the plurality of solid particles are selected from aluminum nitride, boron nitride, or combinations thereof. 10. The apparatus of claim 6, wherein the heat transfer medium is a liquid. 11. The apparatus of claim 1, further comprising a precursor material at least partially filling the canister. 12. The apparatus of claim 11, wherein the precursor material is pentakis(dimethylamido) tantalum. 13. The apparatus of claim 1, further comprising an oil trap coupled to the outlet port. 14. An apparatus for generating a chemical precursor used in a vapor deposition processing system, comprising: a canister having an interior volume; a precursor material and a plurality of solid particles at least partially filling the interior volume; and a heater coupled to the canister, wherein the plurality of solid particles are in communication with the heater and the precursor material. 15. The apparatus of claim 14, wherein the precursor material is pentakis(dimethylamido) tantalum. 16. The apparatus of claim 14, wherein the canister further comprises: a top, a bottom, and sidewalls; an inlet port and an outlet port in fluid communication with the interior volume; and a plurality of baffles within the interior region. 17. The apparatus of claim 16, wherein the baffles are coupled to the top of the canister. 18. The apparatus of claim 16, wherein the baffles are coupled to the bottom of the canister. 19. The apparatus of claim 16, wherein the inlet port further comprises an inlet tube adapted to direct the flow of a carrier gas away from the precursor material and the plurality of solid particles. 20. An apparatus for generating a chemical precursor used in a vapor deposition processing system, comprising: a canister having a sidewall, a top, and a bottom forming an interior volume; an inlet port and an outlet port in fluid communication with the interior volume; and a plurality of baffles extending from the bottom of the canister within the interior volume, wherein the baffles form an extended mean flow path between the inlet port and the outlet port.
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