After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is h
After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.
대표청구항▼
What is claimed is: 1. A method for fabricating a semiconductor device, the method comprising: a film forming step of supplying, while moving a nozzle having fine outlets and a substrate relative to each other in an in-plane direction, a material with fluidity from the outlets to a surface of the s
What is claimed is: 1. A method for fabricating a semiconductor device, the method comprising: a film forming step of supplying, while moving a nozzle having fine outlets and a substrate relative to each other in an in-plane direction, a material with fluidity from the outlets to a surface of the substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized. 2. A method for fabricating a semiconductor device, the method comprising: a film forming step of supplying, while rotating a roller, a material with fluidity adhered to a surface of the roller to a surface of a substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized. 3. The method of claim 1 or 2, wherein the pressing surface of the pressing member has a hydrophobic property. 4. The method of claim 1 or 2, wherein the material with fluidity is an insulating material. 5. The method of claim 1 or 2, wherein the material with fluidity is in the state of a liquid or a gel. 6. The method of claim 1 or 2, further comprising, after the film forming step, the step of: selectively removing a peripheral portion of the film with fluidity. 7. The method of claim 6, wherein the step of removing the peripheral portion of the film with fluidity is performed by supplying a solution for dissolving the material with fluidity to the peripheral portion of the film with fluidity, while rotating the substrate. 8. The method of claim 6, wherein the step of removing the peripheral portion of the film with fluidity is performed by irradiating the peripheral portion of the film with fluidity with light to modify the peripheral portion and removing the modified peripheral portion. 9. The method of claim 1 or 2, wherein the planarizing step includes the step of measuring a plurality of distances between the surface of the substrate and the pressing surface and pressing the film with fluidity by the pressing surface such that the plurality of distances become equal. 10. The method of claim 1 or 2, wherein the planarizing step includes the step of measuring a plurality of distances between a surface of a stage on which the substrate is placed and the pressing surface and pressing the film with fluidity by the pressing surface such that the plurality of distances become equal. 11. The method of claim 1 or 2, wherein the solidifying step is performed by heating the film with fluidity, while pressing the film with fluidity by the pressing surface in the planarizing step. 12. The method of claim 1 or 2, further comprising, after the solidifying step, the step of: thinning the entire film with fluidity. 13. The method of claim 12, wherein the step of thinning the entire film with fluidity is performed by plasma etching. 14. The method of claim 12, wherein the step of thinning the film with fluidity is performed by chemical mechanical polishing. 15. A method for fabricating a semiconductor device, the method comprising: a film forming step of supplying a material with fluidity to a surface of a substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized, the planarizing step including the step of measuring a plurality of distances between a surface of a stage on which the substrate is placed and the pressing surface and pressing the film with fluidity by the pressing surface such that the plurality of distances become equal, the step of measuring the plurality of distances being performed by measuring an electrostatic capacitance per unit area at a position at which the measurement is performed. 16. A method for fabricating a semiconductor device, the method comprising: a film forming step of supplying a material with fluidity to a surface of a substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized, the solidifying step being performed by irradiating the film with fluidity with light, while pressing the film with fluidity by the pressing surface in the planarizing step. 17. The method of claim 16, wherein the step of irradiating the film with fluidity with light is performed while cooling the film with fluidity or after temporarily solidifying the film with fluidity by cooling. 18. A method for fabricating a semiconductor device, the method comprising: a film forming step of supplying a material with fluidity to a surface of a substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized, the solidifying step being performed by irradiating the film with fluidity with light and heating the film with fluidity, while pressing the film with fluidity by the pressing surface in the planarizing step. 19. A method for fabricating a semiconductor device, the method comprising the steps of: supplying, while moving a nozzle having fine outlets and a substrate relative to each other in an in-plane direction, an insulating material with fluidity from the outlets to a surface of the substrate to form an insulating film with fluidity; pressing the insulating film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the insulating film with fluidity; solidifying the insulating film with fluidity having the surface planarized; performing selective etching with respect to the solidified insulating film to form a depressed portion in the solidified insulating film; and burying a metal material in the depressed portion to form a buried interconnect or plug. 20. A method for fabricating a semiconductor device, the method comprising: the step of supplying, while rotating a roller, an insulating material with fluidity adhered to a surface of the roller to a surface of a substrate to form an insulating film with fluidity; a planarizing step of pressing the insulating film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the insulating film with fluidity; a solidifying step of solidifying the insulating film with fluidity having the surface planarized; the step of performing selective etching with respect to the solidified insulating film to form a depressed portion in the solidified insulating film; and the step of burying a metal material in the depressed portion to form a buried interconnect or plug. 21. The method of claim 19 or 20, wherein the insulating film is an organic film, an inorganic film, an organic/inorganic hybrid film, a photoforming film, a photosensitive resin film, or a porous film. 22. The method of claim 19 or 20, wherein a relative dielectric constant of the insulating film is approximately 4 or less. 23. A method for fabricating a semiconductor device, the method comprising: an insulating film forming step of supplying an insulating material with fluidity to a surface of a substrate to form an insulating film with fluidity; a planarizing step of pressing the insulating film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the insulating film with fluidity; a solidifying step of solidifying the insulating film with fluidity having the surface planarized; a step of performing selective etching with respect to the solidified insulating film to form a depressed portion in the solidified insulating film; and a step of burying a metal material in the depressed portion to form a buried interconnect or plug, wherein: the planarizing step includes a sub-step of measuring a plurality of distance between a surface of a stage on which the substrate is placed and the pressing surface, and pressing the insulating film with fluidity by the pressing surface such that the plurality of distance become equal, and the sub-step of measuring the plurality of distance is performed by measuring an electrostatic capacitance per unit area at a position at which the measurement is performed. 24. A method for fabricating a solid film, the method comprising: a film forming step of supplying, while moving a nozzle having fine outlets and a substrate relative to each other in an in-plane direction, a material with fluidity from the outlets to a surface of the substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized. 25. A method for fabricating a solid film, the method comprising: a film forming step of supplying, while rotating a roller, a material with fluidity adhered to a surface of the roller to a surface of a substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized. 26. A method for fabricating a semiconductor device, the method comprising: supplying an insulating material with fluidity to a surface of a substrate to form an insulating film with fluidity; pressing the insulating film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the insulating film with fluidity; solidifying the insulating film with fluidity having the surface planarized; performing selective etching with respect to the solidified insulating film to form a depressed portion in the solidified insulating film; and burying a metal material in the depressed portion to form a buried interconnect or plug. 27. A method for fabricating a semiconductor device, the method comprising: a film forming step of supplying a material with fluidity to a surface of a substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized, wherein the material with fluidity is an insulating material including a Si--O bond. 28. The method of claim 27, wherein the insulating material is including siloxane. 29. The method of claim 27, wherein the pressing surface of the pressing member has a hydrophobic property. 30. The method of claim 27, wherein the material with fluidity is in the state of a liquid or a gel. 31. The method of claim 27, further comprising, after the film forming step, the step of selectively removing a peripheral portion of the film with fluidity. 32. The method of claim 31, wherein the step of removing the peripheral portion of the film with fluidity is performed by supplying a solution for dissolving the material with fluidity to the peripheral portion of the film with fluidity, while rotating the substrate. 33. The method of claim 31, wherein the step of removing the peripheral portion of the film with fluidity is performed by irradiating the peripheral portion of the film with fluidity with light to modify the peripheral portion and removing the modified peripheral portion. 34. The method of claim 27, wherein the planarizing step includes the step of measuring a plurality of distances between the surface of the substrate and the pressing surface and pressing the film with fluidity by the pressing surface such that the plurality of distances become equal. 35. The method of claim 27, wherein the planarizing step includes the step of measuring a plurality of distances between a surface of a stage on which the substrate is placed and the pressing surface and pressing the film with fluidity by the pressing surface such that the plurality of distances become equal. 36. The method of claim 27, wherein the solidifying step is performed by heating the film with fluidity, while pressing the film with fluidity by the pressing surface in the planarizing step. 37. The method of claim 27, further comprising, after the solidifying step, the step of thinning the film with fluidity. 38. The method of claim 37, wherein the step of thinning the film with fluidity is performed by plasma etching. 39. The method of claim 37, wherein the step of thinning the film with fluidity is performed by chemical mechanical polishing. 40. A method for fabricating a semiconductor device, the method comprising: a film forming step of supplying a material with fluidity to a surface of a substrate to form a film with fluidity; a planarizing step of pressing the film with fluidity against the substrate by a planar pressing surface of a pressing member to planarize a surface of the film with fluidity; and a solidifying step of solidifying the film with fluidity having the surface planarized, wherein the material with fluidity is including a conductive material, and the solidified film is a metal film. 41. The method of claim 40, wherein the pressing surface of the pressing member has a hydrophobic property. 42. The method of claim 40, wherein the material with fluidity is in the state of a liquid or a gel. 43. The method of claim 40, further comprising, after the film forming step, the step of selectively removing a peripheral portion of the film with fluidity. 44. The method of claim 43, wherein the step of removing the peripheral portion of the film with fluidity is performed by supplying a solution for dissolving the material with fluidity to the peripheral portion of the film with fluidity, while rotating the substrate. 45. The method of claim 40, wherein the planarizing step includes the step of measuring a plurality of distances between the surface of the substrate and the pressing surface and pressing the film with fluidity by the pressing surface such that the plurality of distances become equal. 46. The method of claim 40, wherein the planarizing step includes the step of measuring a plurality of distances between a surface of a stage on which the substrate is placed and the pressing surface and pressing the film with fluidity by the pressing surface such that the plurality of distances become equal. 47. The method of claim 40, wherein the solidifying step is performed by heating the film with fluidity, while pressing the film with fluidity by the pressing surface in the planarizing step. 48. The method of claim 40, further comprising, after the soldifying step, the step of thinning the film with fluidity. 49. The method of claim 48, wherein the step of thinning the film with fluidity is performed by plasma etching. 50. The method of claim 48, wherein the step of thinning the film with fluidity is performed by chemical mechanical polishing.
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