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As devices are often different in the characteristics from one another, semiconductor chips based on the devices have discrepancies in the performance. A semiconductor device having a semiconductor switching element and a drive controlling means (1) for generating from input signals (A) and (B) driv

As devices are often different in the characteristics from one another, semiconductor chips based on the devices have discrepancies in the performance. A semiconductor device having a semiconductor switching element and a drive controlling means (1) for generating from input signals (A) and (B) drive signals (a) and (b) to control the action of the semiconductor switching element is provided comprising a characteristic compensating means (2) for generating from a characteristic compensation input signal a compensation signal to eliminate variations in the transmission delay time of the drive controlling means (1).

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What is claimed is: 1. A semiconductor device comprising: a semiconductor switching element; a current detecting means for detecting the current flowing across the semiconductor switching element; an over-current protecting means for canceling an action of said semiconductor switching element when

What is claimed is: 1. A semiconductor device comprising: a semiconductor switching element; a current detecting means for detecting the current flowing across the semiconductor switching element; an over-current protecting means for canceling an action of said semiconductor switching element when a detection signal from the current detecting means exceeds a predetermined trip level; a drive controlling means for delivering a drive signal to the semiconductor switching element unless the detection signal exceeds the predetermined trip level is exceeded; and a characteristic compensating means for selecting said predetermined trip level by selecting a reference voltage from a plurality of reference voltages to determine said pre-determined trip-level, the selecting based on which of the plurality of reference voltages exceeds a value of the detection signal measured by the current detecting means. 2. The semiconductor device according to claim 1, wherein the semiconductor switching element comprises plural emitters. 3. The semiconductor device according to claim 1, wherein the drive controlling means comprises: logic means for transferring an input signal as a logic signal unless the predetermined trip level is exceeded, and means responsive to the logic signal for delivering the drive signal to the semiconductor switching element. 4. A semiconductor device comprising: a semiconductor switching element; a current detecting means for detecting the current flowing across the semiconductor switching element; an over-current protecting means for canceling an action of said semiconductor switching element when a detection signal from the current detecting means exceeds a predetermined trip level; a drive controlling means for delivering a drive signal to the semiconductor switching element unless the predetermined trip level is exceeded; and a characteristic compensating means for selecting said predetermined trip level by selecting a reference voltage from a plurality of reference voltages to determine said pre-determined trip-level, the selecting based on which of the plurality of reference voltages exceeds a value of the detection signal measured by the current detecting means, wherein said characteristic compensating means comprises at least one of a nonvolatile memory or one-time ROM provided in an integrated circuit form. 5. The semiconductor device according to claim 4, wherein the semiconductor switching element comprises plural emitters. 6. The semiconductor device according to claim 4, wherein the drive controlling means comprises: logic means for transferring an input signal as a logic signal unless the predetermined trip level is exceeded, and means responsive to the logic signal for delivering the drive signal to the semiconductor switching element. 7. A semiconductor device comprising: a semiconductor switching element; a current detector configured to detect a current flowing across the semiconductor switching element; an over-current protection circuit configured to cancel an action of said semiconductor switching element when a detection signal from the current detector exceeds a predetermined trip level; a drive controller configured to deliver a drive signal to the semiconductor switching element unless the predetermined trip level is exceeded; and a characteristic compensator circuit configured to select said predetermined trip level to a value greater than a sense voltage associated with the current flowing across the semiconductor switching element being protected by the over-current protection circuit, said characteristic compensator circuit configured to select said trip level by selecting a reference voltage from a plurality of reference voltages to determine said pre-determined trip-level, the selecting based on which of the plurality of reference voltages exceeds a value of the sense voltage associated with the current flowing across the semiconductor switching element. 8. The semiconductor device according to claim 7, wherein the semiconductor switching element comprises plural emitters. 9. The semiconductor device according to claim 7, wherein the drive controller comprises: a logic circuit configured to transfer an input signal as a logic signal unless the predetermined trip level is exceeded, and a driver circuit responsive to the logic signal and configured to deliver the drive signal to the semiconductor switching element. 10. A semiconductor device comprising: a semiconductor switching element; a current detector configured to detect a current flowing across the semiconductor switching element; an over-current protection circuit configured to cancel an action of said semiconductor switching element when a detection signal from the current detector exceeds a predetermined trip level; a drive controller configured to deliver a drive signal to the semiconductor switching element unless the predetermined trip level is exceeded; and a characteristic compensator circuit configured to select said predetermined trip level to a value greater than a sense voltage associated with the current flowing across the semiconductor switching element being protected by the over-current protection circuit, said characteristic compensator circuit configured to adjust said pre-determined trip level by selecting a reference voltage from a plurality of reference voltages to determine said predetermined trip-level, the selecting based on which of the plurality of reference voltages exceeds a value of the sense voltage associated with the current flowing across the semiconductor switching element, wherein said characteristic compensator circuit comprises at least one of a nonvolatile memory or one-time ROM provided in an integrated circuit form. 11. The semiconductor device according to claim 10, wherein the semiconductor switching element comprises plural emitters. 12. The semiconductor device according to claim 10, wherein the drive controller comprises: a logic circuit configured to transfer an input signal as a logic signal unless the predetermined trip level is exceeded, and a driver circuit responsive to the logic signal and configured to deliver the drive signal to the semiconductor switching element.