Etching processes using CFfor silicon dioxide and CFfor titanium nitride
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/302
H01L-021/02
출원번호
US-0163836
(2005-11-01)
등록번호
US-7276450
(2007-10-02)
발명자
/ 주소
Mezzapelle,Joseph J.
출원인 / 주소
International Business Machines Corporation
대리인 / 주소
Hoffman, Warnick & D'Alessandro LLC
인용정보
피인용 횟수 :
3인용 특허 :
13
초록▼
Methods of etching a dielectric layer and a cap layer over a conductor to expose the conductor are disclosed. In one embodiment, the methods include the use of a silicon dioxide (SiO2) etching chemistry including octafluorocyclobutane (C4F8) and a titanium nitride (TiN) etching chemistry including t
Methods of etching a dielectric layer and a cap layer over a conductor to expose the conductor are disclosed. In one embodiment, the methods include the use of a silicon dioxide (SiO2) etching chemistry including octafluorocyclobutane (C4F8) and a titanium nitride (TiN) etching chemistry including tetrafluoro methane (CF4). The methods prevent etch rate degradation and exhibit reduced electro-static discharge (ESD) defects.
대표청구항▼
What is claimed is: 1. A method of etching to expose a conductor, the method comprising: etching through a first dielectric layer including silicon dioxide (SiO2) using a chemistry including octafluorocyclobutane (C4F8); and etching through a cap layer including titanium nitride (TiN) using a chemi
What is claimed is: 1. A method of etching to expose a conductor, the method comprising: etching through a first dielectric layer including silicon dioxide (SiO2) using a chemistry including octafluorocyclobutane (C4F8); and etching through a cap layer including titanium nitride (TiN) using a chemistry including tetrafluoro methane (CF4) to expose the conductor, wherein the first dielectric layer etching includes using the following conditions: approximately 90-110 mTorr (mT) of pressure, an RF energy of approximately 950-1050 watts (W) at approximately 27 MHz at one electrode and at approximately 2 MHz at another electrode, and a gas flow of approximately 375-425 standard cubic centimeters (sccm) of argon (Ar), approximately 13-17 sccm of octafluorocyclobutane (C4F8) and approximately 5-7 sccm of oxygen (O2). 2. The method of claim 1, wherein the cap layer etching includes using the following conditions: approximately 255-285 mT of pressure, an RF energy of approximately 1350-1450 W at approximately 27 MHz at one electrode and approximately 650-750 W at approximately 2 MHz at another electrode, and a gas flow of approximately 135-165 sccm of tetrafluoro methane (CF4) and approximately 90-110 sccm of nitrogen (N2). 3. The method of claim 1, wherein each etching is conducted in a reactive ion etching tool. 4. The method of claim 1, wherein each etching includes using the following conditions: a wafer-holding chuck pressure of approximately 18-22 Torr of helium (He), and a chuck temperature of approximately 18-22째 C. 5. The method of claim 1, further comprising etching through a second dielectric layer including silicon nitride (Si3N4) prior to etching the first dielectric layer, the second dielectric positioned over the first dielectric layer. 6. The method of claim 1, further comprising performing an ash after the cap layer etching. 7. The method of claim 1, further comprising performing a descum prior to the etching of the first dielectric layer. 8. The method of claim 7, wherein the performing a descum includes using a gas flow including nitrogen (N2) and hydrogen (H2). 9. A method of etching to expose a conductor, the method comprising: etching through a first dielectric layer including silicon nitride (Si3N4); etching through a second dielectric layer including silicon dioxide (SiO2) using a chemistry including a gas flow of approximately 13-17 standard cubic centimeters (sccm) of octafluorocyclobutane (C4F8); and etching through a cap layer including titanium nitride (TiN) using a chemistry including a gas flow of approximately 135-165 sccm of tetrafluoro methane (CF4) to expose the conductor, wherein the second dielectric layer etching includes using the following conditions: approximately 90-110 mTorr (mT) of pressure, an RF energy of approximately 950-1050 watts (W) at approximately 27 MHz at one electrode and at approximately 2 MHz at another electrode, and the gas flow further includes approximately 375-425 sccm of argon (Ar) and approximately 5-7 sccm of oxygen (O2). 10. The method of claim 9, wherein the cap layer etching includes using the following conditions: approximately 255-285 mT of pressure, an RF energy of approximately 1350-1450 W at approximately 27 MHz at one electrode and approximately 650-750 W at approximately 2 MHz at another electrode, and the gas flow further includes approximately 90-110 sccm of nitrogen (N2). 11. The method of claim 9, wherein each etching is conducted in a reactive ion etching tool. 12. The method of claim 9, wherein each etching includes using the following conditions: a wafer-holding chuck pressure of approximately 18-22 Torr of helium (He), and a chuck temperature of approximately 18-22째 C. 13. The method of claim 9, further comprising performing an ash after the cap layer etching. 14. The method of claim 9, further comprising performing a descum prior to the etching of the first dielectric layer, the performing of a descum including using a gas flow of nitrogen (N2) and hydrogen (H2). 15. The method of claim 14, wherein the performing of a descum includes using the following additional conditions: a wafer-holding chuck pressure of approximately 18-22 Torr of helium (He), and a chuck temperature of approximately 18-22째 C. 16. A method of exposing a conductor below a stack including a patterned photoresist over a silicon nitride (Si3N4) layer over a silicon dioxide (SiO2) layer over a titanium nitride (TiN) cap layer, the method comprising: etching through the silicon nitride (Si3N4) layer; etching through the silicon dioxide (SiO2) layer using the following conditions: approximately 90-110 mTorr (mT) of pressure, an RF energy of approximately 950-1050 watts (W) at approximately 27 MHz at one electrode and at approximately 2 MHz at another electrode, and a gas flow of approximately 375-425 sccm of argon (Ar), approximately 13-17 sccm of octafluorocyclobutane (C4F8) and approximately 5-7 sccm of oxygen (O2); and etching through the titanium nitride (TiN) layer using the following conditions: approximately 255-285 mT of pressure, an RF energy of approximately 1350-1450 W at approximately 27 MHz at one electrode and approximately 650-750 W at approximately 2 MHz at another electrode, and a gas flow of approximately 135-165 sccm of tetrafluoro methane (CF4) and approximately 90-110 sccm of nitrogen (N2). 17. The method of claim 16, wherein the etchings are preceded by a performing a descum and followed by performing an ash. 18. The method of claim 16, wherein each etching includes using the following conditions: a wafer-holding chuck pressure of approximately 18-22 Torr of helium (He), and a chuck temperature of approximately 18-22째 C.
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이 특허에 인용된 특허 (13)
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