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Provided is an infrared radiation detector comprising an active layer having a front side and a back side. An anti-reflective coating is disposed on the front side and is configured to minimize reflection of incident light within a wavelength band of interest upon the front side. A highly-reflective

Provided is an infrared radiation detector comprising an active layer having a front side and a back side. An anti-reflective coating is disposed on the front side and is configured to minimize reflection of incident light within a wavelength band of interest upon the front side. A highly-reflective coating is disposed on the backside and is configured to increase reflection within the wavelength band of interest upon the back side. Each one of the anti-reflective coating and highly-reflective coatings are comprised of a quarterwave stack of a plurality of layers each having an optical thickness equal to one-fourth of the wavelength band of interest. The wavelength band of interest is preferably in the range of from about 3.0 to about 5.0 microns.

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What is claimed is: 1. An infrared radiation detector, comprising: an active layer having a front side and a back side and being formed of a Mercury-Cadmium-Telluride material system; an anti-reflective coating disposed on the front side and formed of a Mercury-Cadmium-Telluride material system and

What is claimed is: 1. An infrared radiation detector, comprising: an active layer having a front side and a back side and being formed of a Mercury-Cadmium-Telluride material system; an anti-reflective coating disposed on the front side and formed of a Mercury-Cadmium-Telluride material system and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and formed of a Mercury-Cadmium-Telluride material system and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest. 2. An infrared radiation detector, comprising: an active layer having a front side and a back side; an anti-reflective coating disposed on the front side and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the wavelength band of interest is in the range of from about 3.0 to about 5.0 microns. 3. An infrared radiation detector, comprising: an active layer having a front side and a back side; an anti-reflective coating disposed on the front side and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the active layer has a thickness in the range of from about 0.5 microns to about 2.0 microns. 4. An infrared radiation detector, comprising: an active layer having a front side and a back side; an anti-reflective coating disposed on the front side and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the active layer is formed of a compound having the following formula: Hg0.3Cd0.7Te. 5. An infrared radiation detector, comprising: an active layer having a front side and a back side; an anti-reflective coating disposed on the front side and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the thickness of the anti-reflective coating is about 0.625 microns. 6. An infrared radiation detector, comprising: an active layer having a front side and a back side; an anti-reflective coating disposed on the front side and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the layers of the anti-reflective coating alternate between material formed of CdTe and material formed of a compound having the following formula: Hg0.35Cd0.65Te. 7. An infrared radiation detector, comprising: an active layer having a front side and a back side; an anti-reflective coating disposed on the front side and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the thickness of the highly-reflective coating is about 0.625 microns. 8. An infrared radiation detector, comprising: an active layer having a front side and a back side; an anti-reflective coating disposed on the front side and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein: the plurality of layers of the highly-reflective coating being alternately formed of CdTe material and a material formed of a compound having the following formula: Hg0.35Cd0.65Te; the full-width at half maximum transmission for the quarterwave stack of the highly-reflective coating being centered at a wavelength of about 3750 nanometers. 9. An infrared radiation detector, comprising: an active layer having a front side and a back side; an anti-reflective coating disposed on the front side and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the quarterwave stack comprises 20 layers. 10. An infrared radiation detector, comprising: an active layer having a front side and a back side; an anti-reflective coating disposed on the front side and being configured to minimize reflection of incident light within a wavelength band of interest upon the front side, the anti-reflective coating being comprised of a quarterwave stack of three layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection within the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the quarterwave stack comprises 30 layers. 11. An infrared radiation detector, comprising: an active layer having a front side and a back side and being formed of a Mercury-Cadmium-Telluride material system; a highly-reflective coating disposed on the front side and formed of a Mercury-Cadmium-Telluride material system and being configured to increase reflection of incident light falling outside of a wavelength band of interest and minimize reflection of incident light falling within the wavelength band of interest, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and formed of a Mercury-Cadmium-Telluride material system and being configured to increase reflection of the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest. 12. The detector of claim 11 wherein the infrared detector is installed in a cavity of a Fabry-Perot etalon. 13. The infrared detector of claim 12 wherein the active layer is optimized to provide about 90 percent absorptance for a wavelength band of interest in the range of from about 3650 nanometers to about 3850 nanometers. 14. An infrared radiation detector, comprising: an active layer having a front side and a back side; a highly-reflective coating disposed on the front side and being configured to increase reflection of incident light falling outside of a wavelength band of interest and minimize reflection of incident light falling within the wavelength band of interest, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection of the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein: the active layer has a thickness in the range of from about 0.5 microns to about 2.0 microns; the thickness being configured complementary to the wavelength band of interest such that absorptance into the active layer is maximized. 15. An infrared radiation detector, comprising: an active layer having a front side and a back side; a highly-reflective coating disposed on the front side and being configured to increase reflection of incident light falling outside of a wavelength band of interest and minimize reflection of incident light falling within the wavelength band of interest, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection of the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the thickness of the highly-reflective coating on the front side is about 0.625 microns. 16. An infrared radiation detector, comprising: an active layer having a front side and a back side; a highly-reflective coating disposed on the front side and being configured to increase reflection of incident light falling outside of a wavelength band of interest and minimize reflection of incident light falling within the wavelength band of interest, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection of the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the thickness of the highly-reflective coating on the back side is about 0.625 microns. 17. An infrared radiation detector, comprising: an active layer having a front side and a back side; a highly-reflective coating disposed on the front side and being configured to increase reflection of incident light falling outside of a wavelength band of interest and minimize reflection of incident light falling within the wavelength band of interest, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection of the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein the active layer is formed of a compound having the following formula: Hg0.3Cd0.7Te. 18. An infrared radiation detector, comprising: an active layer having a front side and a back side; a highly-reflective coating disposed on the front side and being configured to increase reflection of incident light falling outside of a wavelength band of interest and minimize reflection of incident light falling within the wavelength band of interest, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; and a highly-reflective coating disposed on the back side and being configured to increase reflection of the wavelength band of interest upon the back side, the highly-reflective coating being comprised of a quarterwave stack of a plurality of layers each having an optical thickness equivalent to one-fourth of the wavelength band of interest; wherein: the plurality of layers of the highly-reflective coatings are alternately formed of CdTe material and a material formed of a compound having the following formula: Hg0.35Cd0.65Te; the full-width at half maximum transmission for the quarterwave stack of the highly-reflective coatings being centered at a wavelength of about 3750 nanometers.