The present invention relates to a cobalt electroless plating bath composition. In one embodiment, the present invention relates to cobalt electroless plating in the fabrication of interconnect structures in semiconductor devices.
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What is claimed is: 1. An electroless plating structure on a copper pad, having a composition comprising: pMwsMxByPz wherein pM is a primary metal consisting of at least one element selected from the group consisting of Cu, Ag, and Au; wherein sM is a secondary metal consisting of at least one ele
What is claimed is: 1. An electroless plating structure on a copper pad, having a composition comprising: pMwsMxByPz wherein pM is a primary metal consisting of at least one element selected from the group consisting of Cu, Ag, and Au; wherein sM is a secondary metal consisting of at least one element selected from the group consisting of Cr, Mo, W, Mn, Tc, and Re; wherein B and P represent boron and phosphorus, respectively; and wherein w has a range from about 0.5 to about 0.99, x has a range from 0.0 to about 0.2, y has a range from about 0.01 to about 0.1, and z has a range from 0.0 to about 0.02. 2. An electroless plating structure on a copper pad, having a composition comprising: pMwsMxByPz wherein pM is a primary metal consisting of at least one element selected from the group consisting of Cu, Ag, Au, Pd, Pt. Ni, Rh, and Ir; wherein sM is a secondary metal consisting of at least one element selected from the group consisting of Cr, Mo, W, Mn, Tc, and Re; wherein B and P represent boron and phosphorus, respectively; and wherein w has a range from about 0.05 to about 0.99, x has a range from a value approaching but not equal to 0.0 to about 0.02, y has a range from about 0.01 to about 0.1, and z has a range from 0.0 to about 0.02. 3. The electroless plating structure according to claim 2, wherein pM is a primary metal consisting of at least one element selected from the group consisting of Ni, Pd, and Pt. 4. An electroless plating structure on a copper pad, having a composition comprising: pMwsMxByPz wherein pM is a primary metal consisting of at least one element selected from the group consisting of Rh and Ir; wherein sM is a secondary metal consisting of at least one element selected from the group consisting of Cr, Mo, W, Mn, Tc, and Re; wherein B and P represent boron and phosphorus, respectively; and wherein w has a range from about 0.5 to about 0.99, x has a range from 0.0 to about 0.2, y has a range from about 0.01 to about 0.1, and z has a range from 0.0 to about 0.02. 5. An electroless plating structure on a copper pad, having a composition comprising: pMwsMxByPz wherein pM is a primary metal consisting of at least one element selected from the group consisting of Cu, Ag, Au, Pd, Pt, Ni, Rh, and Ir; wherein sM is a secondary metal consisting of at least one element selected from the group consisting of Cr, Mo, W, Mn, Tc, and Re; wherein B and P represent boron and phosphorus, respectively; and wherein w has a range from about 0.5 to about 0.99, x has a range from 0.0 to about 0.2, y has a range from about 0.01 to about 0.1, and z has a range from a value approaching but not equal to 0.0 to about 0.02. 6. The electroless plating structure according to claim 5, wherein x has a range from a value approaching but not equal to 0.0 to about 0.02. 7. The electroless plating structure according to claim 5, wherein pM is a primary metal consisting of at least one element selected from the group consisting of Rh and Ir. 8. An electroless plating structure on a copper pad, having a composition comprising: CowsMxByPz wherein sM is a secondary metal consisting of at least one element selected from the group consisting of Cr, Mo, W, Mn, Tc, and Re; wherein Co, B, and P represent cobalt, boron, and phosphorus, respectively; and wherein w has a range from about 0.5 to about 0.99, x has a range from 0.0 to about 0.2, y has a range from about 0.01 to about 0.1, and z has a range from a value approaching but not equal to 0.0 to about 0.02. 9. The electroless plating structure of claim 8 wherein x has a range from a value approaching but not equal to 0.0 to about 0.02.
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