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Device and method of fabricating device. The device includes a dual damascene line having a metal line and a via, and a redundant liner arranged to divide the metal line. The method includes forming a trench in a metal stripe of a dual damascene line, depositing a barrier layer in the trench, and fi

Device and method of fabricating device. The device includes a dual damascene line having a metal line and a via, and a redundant liner arranged to divide the metal line. The method includes forming a trench in a metal stripe of a dual damascene line, depositing a barrier layer in the trench, and filling a remainder of the trench with metal.

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What is claimed is: 1. A method of fabricating a device, comprising: forming a trench in a metal stripe of a dual damascene line; depositing a barrier layer in the trench; filling a remainder of the trench with metal; and forming a second trench, wherein at least a portion of the second trench exte

What is claimed is: 1. A method of fabricating a device, comprising: forming a trench in a metal stripe of a dual damascene line; depositing a barrier layer in the trench; filling a remainder of the trench with metal; and forming a second trench, wherein at least a portion of the second trench extends through the barrier layer. 2. The method in accordance with claim 1, wherein the forming of the trench comprises one of reactive ion etching and wet etching. 3. The method in accordance with claim 1, further comprising: polishing an upper surface of the metal filling the remainder of the trench to form a metal stripe in a smooth structure upper surface. 4. The method in accordance with claim 3, further comprising: depositing a cap layer over the smooth structure upper surface; depositing an interlevel layer over the cap layer, wherein the second trench is formed in the interlevel layer. 5. The method in accordance with claim 4, further comprising: depositing a second barrier layer in the second trench; filling a remainder of the second trench with metal; and polishing an upper surface of the metal filling the remainder of the second trench to form a second metal stripe in a second smooth structure upper surface. 6. The method in accordance with claim 5, further comprising: depositing a second cap layer over the second smooth structure upper surface; depositing a second interlevel layer over the second cap layer; forming a third trench in the second interlevel layer, wherein at least a portion of the third trench extends through the second barrier layer; depositing a second barrier layer in the third trench; filling a remainder of the third trench with metal; and polishing an upper surface of the metal filling the remainder of the third trench to form a metal stripe in a third smooth structure upper surface. 7. An interconnection structure formed according to the method of claim 1. 8. A method for fabricating an interconnect structure, comprising: forming a trench in a substrate; depositing metal in the trench; forming a second trench in the metal; depositing a redundant liner in the second trench; depositing metal in the second trench; and forming a third trench in which at least a portion of the third trench extends through the redundant liner. 9. The method in accordance with claim 8, further comprising: depositing an interlevel layer over the substrate; and forming the third trench in the interlevel layer. 10. The method in accordance with claim 9, further comprising depositing metal into the third trench. 11. The method in accordance with claim 10, wherein, prior to depositing the metal into the third trench, the method comprises depositing an interlevel layer barrier liner into the third trench. 12. A redundant structure formed in accordance with the method of claim 8.