초록 ▼

The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first ga

The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability.

대표청구항 ▼

What is claimed is: 1. A ferroelectric liquid crystal display device having a CMOS circuit comprising an n-channel TFT and a p-channel TFT, said CMOS circuit comprising: each gate electrode of said n-channel TFT and said p-channel TFT having a first conductive layer being in contact with a gate ins

What is claimed is: 1. A ferroelectric liquid crystal display device having a CMOS circuit comprising an n-channel TFT and a p-channel TFT, said CMOS circuit comprising: each gate electrode of said n-channel TFT and said p-channel TFT having a first conductive layer being in contact with a gate insulating film, a second conductive layer being in contact with said first conductive layer and a third conductive layer being in contact with said gate insulating film, side surfaces of the first conductive layer and top and side surfaces of said second conductive layer; a semiconductor layer of said n-channel TFT comprising a first channel formation region, a pair of LDD regions and first source and drain regions; and a semiconductor layer of said p-channel TFT comprising a second channel formation region and second source and drain regions, wherein said second conductive layer comprises a different material from said first conductive layer; wherein a portion which said third conductive layer is in contact with said gate insulating film in said n-channel TFT partially overlaps said pair of LDD regions; wherein a portion which said third conductive layer is in contact with said gate insulating film in said p-channel TFT partially overlaps said second source and drain regions, wherein said semiconductor layer of said p-channel TFT has no LDD regions. 2. A ferroelectric liquid crystal display device according to claim 1, wherein said first conductive layers of said n-channel TFT and said p-channel TFT comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo). 3. A ferroelectric liquid crystal display device according to claim 1, wherein each of said first conductive layers of said n-channel TFT and said p-channel TFT comprises a single layer or a plurality of layers. 4. A ferroelectric liquid crystal display device according to claim 1, wherein said third conductive layers of said n-channel TFT and said p-channel TFT comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo). 5. A ferroelectric liquid crystal display device having a CMOS circuit comprising an n-channel TFT and a p-channel TFT, said CMOS circuit comprising: each gate electrode of said n-channel TFT and said p-channel TFT having a first conductive layer being in contact with a gate insulating film, a second conductive layer being in contact with said first conductive layer and a third conductive layer being in contact with said gate insulating film, side surfaces of said first conductive layer and top and side surfaces of said second conductive layer; a semiconductor layer of said n-channel TFT comprising a first channel formation region, a pair of LDD regions and first source and drain regions; and a semiconductor layer of said p-channel TFT comprising a second channel formation region and second source and drain regions, wherein said second conductive layer comprises a different material from said first conductive layer; wherein a portion which said third conductive layer is in contact with said gate insulating film in said n-channel TFT partially overlaps said pair of LDD regions; wherein the portion which said third conductive layer is in contact with said gate insulating film in said n-channel TFT does not overlap said first source and drain regions; wherein a portion which said third conductive layer is in contact with said gate insulating film in said p-channel TFT partially overlaps said second source and drain regions, wherein said semiconductor layer of said p-channel TFT has no LDD regions. 6. A ferroelectric liquid crystal display device according to claim 5, wherein said first conductive layers of said n-channel TFT and said p-channel TFT comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo). 7. A ferroelectric liquid crystal display device according to claim 5, wherein each of said first conductive layers of said n-channel TFT and said p-channel TFT comprises a single layer or a plurality of layers. 8. A ferroelectric liquid crystal display device according to claim 5, wherein said third conductive layers of said n-channel TFT and said p-channel TFT comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo). 9. A ferroelectric liquid crystal display device having an n-channel TFT and a p-channel TFT over a substrate, said n-channel TFT comprising: a first gate electrode and a second gate electrode formed adjacent to a first semiconductor layer with a first gate insulating film interposed therebetween, said first semiconductor layer comprising a first channel formation region, a pair of LDD regions and first source and drain regions; wherein said second gate electrode partially overlaps said pair of LDD regions while said first gate electrode does not overlap said pair of LDD regions, wherein said second gate electrode comprises a different material from said first gate electrode, and said p-channel TFT comprising: a third gate electrode and a fourth gate electrode formed adjacent to a second semiconductor layer with a second gate insulating film interposed therebetween, said second semiconductor layer comprising a second channel formation region and second source and drain regions being in contact with said second channel formation region, wherein said fourth gate electrode partially overlaps said second source and drain regions while the third gate electrode does not overlap said second source and drain regions, wherein said fourth gate electrode comprises a different material from said third gate electrode, and wherein a wiring is connected to at least one of said second source and drain regions. 10. A ferroelectric liquid crystal display device according to claim 9, wherein said first to fourth gate electrodes comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo). 11. A goggle type ferroelectric liquid crystal display device having a CMOS circuit comprising an n-channel TFT and a p-channel TFT, said CMOS circuit comprising: each gate electrode of said n-channel TFT and said p-channel TFT having a first conductive layer being in contact with a gate insulating film, a second conductive layer being in contact with said first conductive layer, and a third conductive layer being in contact with said gate insulating film, side surfaces of said first conductive layer and top and side surfaces of said second conductive layer; a semiconductor layer of said n-channel TFT comprising a first channel formation region, a pair of LDD regions and first source and drain regions; and a semiconductor layer of said p-channel TFT comprising a second channel formation region and second source and drain regions, wherein said second conductive layer comprises a different material from said first conductive layer; wherein a portion which said third conductive layer is in contact with said gate insulating film in said n-channel TFT partially overlaps said pair of LDD regions; wherein a portion which said third conductive layer is in contact with said gate insulating film in said p-channel TFT is partially overlaps said second source and drain regions, wherein said semiconductor layer of said p-channel TFT has no LDD regions. 12. A goggle type display device according to claim 11, wherein said first conductive layers of said n-channel TFT and said p-channel TFT comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo). 13. A goggle type display device according to claim 11, wherein each of said first conductive layers of said n-channel TFT and said p-channel TFT comprises a single layer or a plurality of layers. 14. A goggle type display device according to claim 11, wherein said third conductive layers of said n-channel TFT and said p-channel TFT comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo). 15. A goggle type ferroelectric liquid crystal display device having a CMOS circuit comprising an n-channel TFT and a p-channel TFT, said CMOS circuit comprising: each gate electrode of said n-channel TFT and said p-channel TFT having a first conductive layer being in contact with a gate insulating film, a second conductive layer being in contact with said first conductive layer, and a third conductive layer being in contact with said gate insulating film, side surfaces of said first conductive layer and top and side surfaces of said second conductive layer; a semiconductor layer of said n-channel TFT comprising a first channel formation region, a pair of LDD regions and first source and drain regions; and a semiconductor layer of said p-channel TFT comprising a second channel formation region and second source and drain regions, wherein said second conductive layer comprises a different material from said first conductive layer; wherein a portion which said third conductive layer is in contact with said gate insulating film in said n-channel TFT partially overlaps said pair of LDD regions; wherein the portion which said third conductive layer is in contact with said gate insulating film in said n-channel TFT does not overlap said first source and drain regions; wherein a portion which said third conductive layer is in contact with said gate insulating film in said p-channel TFT partially overlaps said second source and drain regions, wherein said semiconductor layer of said p-channel TFT has no LDD regions. 16. A goggle type display device according to claim 15, wherein said first conductive layers of said n-channel TFT and said p-channel TFT comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo). 17. A goggle type display device according to claim 15, wherein each of said first conductive layers of said n-channel TFT and said p-channel TFT comprises a single layer or a plurality of layers. 18. A goggle type display device according to claim 15, wherein said third conductive layers of said n-channel TFT and said p-channel TFT comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo). 19. A goggle type ferroelectric liquid crystal display device having an n-channel TFT and a p-channel TFT over a substrate, said n-channel TFT comprising: a first gate electrode and a second gate electrode formed adjacent to a first semiconductor layer with a first gate insulating film interposed therebetween, said first semiconductor layer comprising a first channel formation region, a pair of LDD regions and first source and drain regions; wherein said second gate electrode partially overlaps said pair of LDD regions while said first gate electrode does not overlap said pair of LDD regions, wherein said second gate electrode comprises a different material from said first gate electrode, and said p-channel TFT comprising: a third gate electrode and a fourth gate electrode formed adjacent to a second semiconductor layer with a second gate insulating film interposed therebetween, said second semiconductor layer comprising a second channel formation region and second source and drain regions being in contact with said second channel formation region, wherein said fourth gate electrode partially overlaps said second source and drain regions while said third gate electrode does not overlap said second source and drain regions, wherein said fourth gate electrode comprises a different material from said third gate electrode, and wherein a wiring is connected to at least one of said second source and drain regions. 20. A goggle type display device according to claim 19, wherein said first to fourth gate electrodes comprise a material selected from the group consisting of titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (Mo).