A thin film transistor composed of: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages; (b) a gate dielectric; and (c) a la
A thin film transistor composed of: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages; (b) a gate dielectric; and (c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a substance comprising a fluorocarbon structure.
대표청구항▼
The invention claimed is: 1. A thin film transistor comprising: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages wherein
The invention claimed is: 1. A thin film transistor comprising: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages wherein the thiophene compound exhibits a regioregular structure; (b) a gate dielectric; and (c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a substance comprising a fluorocarbon structure. 2. The transistor of claim 1, wherein the gate dielectric comprises silicon oxide. 3. The transistor of claim 1, wherein the layer is a self-assembled monolayer. 4. The transistor of claim 1, wherein the layer has a thickness ranging from about 0.5 nm to about 500 nm. 5. The transistor of claim 1, wherein the substance further comprises a heteroatom containing moiety covalently bonded to both the fluorocarbon structure and the gate dielectric. 6. The transistor of claim 5, wherein the heteroatom containing moiety comprises a silicon atom or a phosphorus atom. 7. The transistor of claim 1, wherein the substance is a fluoroalkylsilane. 8. The transistor of claim 1, wherein the thiophene compound is a polymeric compound. 9. The transistor of claim 1, wherein the thiophene compound is a homopolymer. 10. The transistor of claim 1, wherein the thiophene compound is a small molecule compound. 11. A thin film transistor comprising: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the thiophene compound is a polymer; (b) a gate dielectric; and (c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a fluoroalkylsilane or a fluoroalkylphosphine, or a mixture thereof. 12. A thin film transistor comprising: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages; (b) a gate dielectric; and (c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a substance comprising a fluorocarbon structure wherein the fluorocarbon structure is a perfluorocarbon structure. 13. A thin film transistor comprising: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages; (b) a gate dielectric; and (c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a substance comprising a fluorocarbon structure wherein the fluorocarbon structure is an unsubstituted fluorocarbon structure.
Heeney, Martin; Farrand, Louise; Giles, Mark; Thompson, Marcus; Tierney, Steven; Shkunov, Maxim; Sparrowe, David; McCulloch, Iain, Mono-, oligo- and poly-4-fluorothiophenes and their use as charge transport materials.
Tommie W. Kelley ; Dawn V. Muyres ; Mark J. Pellerite ; Timothy D. Dunbar ; Larry D. Boardman ; Terrance P. Smith, Surface modifying layers for organic thin film transistors.
Kim, Joo Young; Koo, Bon Won; Lee, Eun Kyung; Lee, Sang Yoon; Lee, Bang Lin, Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same.
Kim,Joo Young; Lee,Eun Kyung; Lee,Bang Lin; Koo,Bon Won; Park,Hyun Jung; Lee,Sang Yoon, Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same.
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