III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/22
H01L-029/02
출원번호
US-0840515
(2004-05-06)
등록번호
US-7282744
(2007-10-16)
발명자
/ 주소
Flynn,Jeffrey S.
Xin,Huoping
Brandes,George R.
출원인 / 주소
Cree, Inc.
대리인 / 주소
Intellectual Property / Technology Law
인용정보
피인용 횟수 :
13인용 특허 :
8
초록▼
A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x≧0.50. In a s
A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x≧0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.
대표청구항▼
What is claimed is: 1. A III-nitride optoelectronic device structure comprising: a dopant-containing doped III-nitride layer; an active region; and a barrier layer disposed between the doped III-nitride layer and the active region, said barrier layer being formed of a material comprising ALGaN havi
What is claimed is: 1. A III-nitride optoelectronic device structure comprising: a dopant-containing doped III-nitride layer; an active region; and a barrier layer disposed between the doped III-nitride layer and the active region, said barrier layer being formed of a material comprising ALGaN having at least 50% Al, based on the total amount of Al and Ga therein; characterized by any of the following: (a) the optoelectronic device structure comprises any of a UV LED and a UV laser diode; and (b) any of the barrier layer and a portion of the doped III-nitride layer contains the dopant in a concentration that varies with depth, with a dopant concentration having a local maximum along an interface between the barrier layer and the doped III-nitride layer. 2. The III-nitride optoelectronic device structure of claim 1, wherein said concentration of Al is in a range of from about 60% to 100%. 3. The III-nitride optoelectronic device structure of claim 1, wherein said concentration of Al is in a range of from about 75% to 100%. 4. The III-nitride optoelectronic device structure of claim 1, wherein said concentration of Al is in a range of from about 80% to 100%. 5. The III-nitride optoelectronic device structure of claim 1, wherein said concentration of Al is in a range of from about 90% to 100%. 6. The III-nitride optoelectronic device structure of claim 1, wherein said concentration of Al is in a range of from about 95% to 100%. 7. The III-nitride optoelectronic device structure of claim 1, wherein said ALGaN layer has a thickness of from about 5 Angstroms to about 200 Angstroms. 8. The III-nitride optoelectronic device structure of claim 1, wherein said ALGaN layer has a thickness of from about 10 Angstroms to about 100 Angstroms. 9. The III-nitride optoelectronic device structure of claim 1, wherein said ALGaN layer has a thickness of from about 10 Angstroms to about 75 Angstroms. 10. The III-nitride optoelectronic device structure of claim 1, wherein said ALGaN layer has a thickness of from about 10 Angstroms to about 60 Angstroms. 11. The III-nitride optoelectronic device Structure of claim 1, wherein said device structure comprises a UV LED. 12. The III-nitride optoelectronic device structure of claim 1, wherein said device structure comprises a MQW UV LED. 13. The III-nitride optoelectronic device structure of claim 1, wherein: said device structure comprises a blue or green LED; and any of the barrier layer and a portion of the doped III-nitride layer contains the dopant in a concentration that varies with depth, with a dopant concentration having a local maximum along an interface between the barrier layer and the doped III-nitride layer. 14. The III-nitride optoelectronic device structure of claim 1, wherein: said device structure comprises a blue laser diode; and any of the barrier layer and a portion of the doped III-nitride layer contains the dopant in a concentration that varies with depth, with a dopant concentration having a local maximum along an interface between the barrier layer and the doped III-nitride layer. 15. The III-nitride optoelectronic device structure of claim 1, wherein said ALGaN layer comprises AIN. 16. The III-nitride optoelectronic device structure of claim 1, wherein said doped III-nitride layer comprises an n-AlGaN layer. 17. The III-nitride optoelectronic device structure of claim 1, wherein said doped III-nitride layer comprises an Mg-doped p-AlGaN layer. 18. The III-nitride optoelectronic structure of claim 1, further comprising a sapphire substrate. 19. The III-nitride optoelectronic structure of claim 1, further comprising a GaN substrate. 20. The III-nitride optoelectronic device structure of claim 1, wherein said dopant comprises at least one dopant species selected from the group consisting of Si, Mg, Be. Fe, Zn, O and Ge. 21. The III-nitride optoelectronic device structure of claim 1, wherein said dopant comprises at least one dopant species selected from the group consisting of Mg and Si. 22. A III-nitride electronic device structure including dopant-containing doped material, an active region, and a barrier material arranged between the doped material and the active region, wherein: the barrier material comprises high-Al content AlxGayN, with x+y=1, and x>0.50; and any of the barrier material and a portion of the doped material contains the dopant in a concentration that varies with depth, with a dopant concentration having a local maximum alone an interface between the barrier material and the doped material. 23. The III-nitride optoelectronic device structure of claim 1, wherein said device structure comprises a UV laser diode. 24. The III-nitride optoelectronic device structure of claim 1, wherein any of the barrier layer and a portion of the doped III-nitride layer contains the dopant in a concentration that varies with depth, with a dopant concentration having a local maximum along an interface between the barrier layer and the doped III-nitride layer. 25. The III-nitride optoelectronic device structure of claim 1, wherein the barrier layer material comprises an epitaxially grown crystal. 26. The III-nitride optoelectronic device structure of claim 1, wherein the active region is non-Indium-containing. 27. The III-nitride optoelectronic device structure of claim 1, wherein the doped III-nitride layer comprises ALGaN, the active region comprises ALGaN, and the barrier layer comprises AIN. 28. The III-nitride electronic device structure of claim 22, wherein the active region contains Al. 29. The III-nitride electronic device structure of claim 22, wherein the doped material comprises ALGaN, the active region comprises ALGaN, and the barrier material comprises AIN. 30. The III-nitride electronic device structure of claim 22, wherein said device structure comprises a heterojunction bipolar transistor.
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