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Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/34
  • C23C-016/00
출원번호 US-0842042 (2004-05-07)
등록번호 US-7285196 (2007-10-23)
발명자 / 주소
  • Ahn,Kie Y.
  • Forbes,Leonard
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Schwegman, Lundberg & Woessner, P.A.
인용정보 피인용 횟수 : 19  인용 특허 : 237

초록

In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requires forming a diffusion barrier to

대표청구항

What is claimed is: 1. A processing chamber for one or more integrated-circuit assemblies, comprising means for sputtering a material and means for vapor-depositing a material, wherein the means for vapor-depositing is adapted to form a graded composition of WSix, where x varies from 2.0 to 2.5.

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  14. Ahn,Kie Y.; Forbes,Leonard, Method for making integrated circuits.
  15. Ahn, Kie Y.; Forbes, Leonard, Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals.
  16. Ahn,Kie Y.; Forbes,Leonard, Methods for making integrated-circuit wiring from copper, silver, gold, and other metals.
  17. Farrar, Paul A., Structures and methods to enhance copper metallization.
  18. Farrar, Paul A., Structures and methods to enhance copper metallization.
  19. Farrar,Paul A., Structures and methods to enhance copper metallization.
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