Use of thermally conductive vias to extract heat from microelectronic chips and method of manufacturing
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H05K-007/20
F28F-007/00
H01L-023/34
출원번호
US-0842731
(2004-05-11)
등록번호
US-7286359
(2007-10-23)
발명자
/ 주소
Khbeis,Michael
Metze,George
Goldsman,Neil
Akturk,Akin
출원인 / 주소
The U.S. Government as represented by the National Security Agency
대리인 / 주소
Arent Fox LLP
인용정보
피인용 횟수 :
10인용 특허 :
37
초록▼
A cooling device for a microcircuit provides a direct path of thermal extraction from a high heat producing area to a cooler area. A thermal insulation layer is formed on a body having at least one component thereon that generates the high heat producing area. At least one via is formed through an e
A cooling device for a microcircuit provides a direct path of thermal extraction from a high heat producing area to a cooler area. A thermal insulation layer is formed on a body having at least one component thereon that generates the high heat producing area. At least one via is formed through an entire thickness of the insulation layer and is in direct communication with the high heat producing area. Heat from the high heat producing area is channeled through each via to the cooler area, which may be ambient atmosphere or a good thermal conductor, such as a heat sink. A thermal conductive material may be deposited within the via and increase the rate of thermal extraction therethrough.
대표청구항▼
What is claimed is: 1. A cooling device for a microcircuit, comprising: a substrate; a thermal insulation layer formed on the substrate; at least one microelectronic device disposed between the substrate and the thermal insulation layer, wherein the at least one microelectronic device has at least
What is claimed is: 1. A cooling device for a microcircuit, comprising: a substrate; a thermal insulation layer formed on the substrate; at least one microelectronic device disposed between the substrate and the thermal insulation layer, wherein the at least one microelectronic device has at least one high heat producing area; and at least one via formed through an entire thickness of said thermal insulation layer and in direct communication with said at least one high heat producing area, wherein said at least one via provides a direct path of thermal extraction from said at least one high heat producing area to a cooler area, wherein said thermal insulation layer has a thickness 1 μm or greater and said at least one via has a diameter in a range of 0.05 to 0.10 μm. 2. The cooling device according to claim 1, wherein said cooler area is an ambient atmosphere. 3. The cooling device according to claim 1, wherein a thermally conductive material is deposited within said at least one via. 4. The cooling device according to claim 3, wherein said thermally conductive material is any one of diamond, graphite, copper, aluminum, gold, silver, silicon carbide (SiC), a superconducting polymer, and ceramic. 5. The cooling device according to claim 3, wherein said thermally conductive material is deposited within said at least one via by any one of physical vapor deposition, chemical vapor deposition, electroplating, vacuum casting, and spin casting. 6. The cooling device according to claim 1, further comprising a heat sink provided on a first side of said thermal insulation layer remote from said at least one high heat producing area. 7. The cooling device according to claim 6, wherein said cooler area is said heat sink. 8. The cooling device according to claim 6, wherein said heat sink is manufactured from a thermally conductive material. 9. The cooling device according to claim 8, wherein said thermally conductive material is metal. 10. The cooling device according to claim 1, wherein when said thermal insulation layer has a thickness of 20 μm, said at least one via has a diameter in a range of 1.0 to 2.0 μm. 11. The cooling device according to claim 1, wherein said at least one via is formed by one of dry etching, wet etching, micromachining, using liftoff techniques for layer patterning, LIGA, and high pressure reflow/deformation.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (37)
Barrett Joseph C., Apparatus for dissipating heat from a conductive layer in a circuit board.
Chao-Fan Chu Richard (Poughkeepsie NY) Ellsworth ; Jr. Michael J. (Poughkeepsie NY) Goth Gary F. (Pleasant Valley NY) Simons Robert E. (Poughkeepsie NY) Zumbrunnen Michael L. (Poughkeepsie NY), Enhanced multichip module cooling with thermally optimized pistons and closely coupled convective cooling channels.
Crawford Robert K. (Palo Alto) Leibovitz Jacques (San Jose) Miller Daniel J. (San Francisco) Chen Kim H. (Fremont CA), Heat pipe-electrical interconnect integration method for chip modules.
Israel Dubin ; Charles M. Erwin, Method and apparatus for heat dispersion from the bottom side of integrated circuit packages on printed circuit boards.
Chobot Ivan I. (Whitby NY CAX) Covert John A. (Binghamton NY) Haight Randy L. (Waverly NY) Mansfield Keith D. (New Milford PA) Miller Donald W. (Newark Valley NY) Neira Reinaldo A. (Endicott NY) Petr, Methods of forming electronic multi-layer printed circuit boards and/or cards and electronic packages including said boa.
Richard C. Chu ; Michael J. Ellsworth, Jr. ; Robert E. Simons, Thermal spreader and interface assembly for heat generating component of an electronic device.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.