$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Process control in electrochemically assisted planarization 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B23H-003/00
  • B24D-011/02
  • C23H-003/00
  • C25D-017/00
출원번호 US-0425339 (2006-06-20)
등록번호 US-7294038 (2007-11-13)
발명자 / 주소
  • Manens,Antoine P.
  • Chen,Liang Yuh
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson & Sheridan
인용정보 피인용 횟수 : 2  인용 특허 : 143

초록

In one embodiment, a pad assembly for electro-processing a substrate is provided which includes a first conductive layer having a working surface adapted to contact the substrate during a polishing process, an intermediate layer coupled to the first conductive layer, and a second conductive layer co

대표청구항

What is claimed is: 1. A pad assembly for electro-processing a substrate, comprising: a first conductive layer having a working surface to contact the substrate during a polishing process; an intermediate layer coupled to the first conductive layer; and a second conductive layer coupled to the inte

이 특허에 인용된 특허 (143)

  1. Krech John E. (Eagan MN), Abrasive articles and methods for their manufacture.
  2. Mohamed Omar DE; Heinz-Werner Schankweiler DE; Robert M. Burgess GB, Abrasive articles and their preparations.
  3. Fujimori Keiichi,JPX ; Matsuo Junji,JPX, Abrasive dresser for polishing disc of chemical-mechanical polisher.
  4. Ferronato Sandro Giovanni Giuseppe (Noorderkerkstraat 19 NL-8081 Et Elburg NLX), Abrasive member for dry grinding and polishing.
  5. Ryoke Katsumi (Kanagawa JPX) Fujiyama Masaaki (Kanagawa JPX) Yamada Keisuke (Kanagawa JPX), Abrasive tape having an interlayer for magnetic head cleaning and polishing.
  6. Manens,Antoine P.; Duboust,Alain; Neo,Siew S.; Chen,Liang Yuh, Algorithm for real-time process control of electro-polishing.
  7. Yamamoto Kyoichi,JPX ; Utaka Kojun,JPX ; Takada Hisashi,JPX ; Iwasaki Akira,JPX, Alkali-soluble adhesive agent.
  8. Ward Trent T., Apparatus and method for reducing removal forces for CMP pads.
  9. Datta Madhav ; Edelstein Daniel Charles ; Uzoh Cyprian Emeka, Apparatus and method for the electrochemical etching of a wafer.
  10. Kishii Sadahiro (Kawasaki JPX) Arimoto Yoshihiro (Kawasaki JPX), Apparatus and method for uniformly polishing a wafer.
  11. Birang Manoocher ; Rosenberg Lawrence M. ; Somekh Sasson ; White John M, Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet.
  12. Satou Yuuichi,JPX, Apparatus for accurately measuring local thickness of insulating layer on semiconductor wafer during polishing and polishing system using the same.
  13. Peter J. Beckage, Apparatus for determining metal CMP endpoint using integrated polishing pad electrodes.
  14. Uzoh Cyprian Emeka ; Harper James McKell Edwin, Apparatus for electrochemical mechanical planarization.
  15. Costakis ; Andrew L., Apparatus for electroplating sheet metals.
  16. Talieh Homayoun ; Basol Bulent, Apparatus for forming an electrical contact with a semiconductor substrate.
  17. Crevasse Annette Margaret ; Maury Alvaro ; Patel Sanjay ; Sowell John Thomas, Apparatus for performing chemical-mechanical polishing.
  18. Cote William J. (Poughquag NY) Ryan James G. (Newtown CT) Okumura Katsuya (Poughkeepsie NY) Yano Hiroyuki (Wappingers Falls NY), Apparatus for processing semiconductor wafers.
  19. Damgaard Morten J.,DKX ; Bjerregaard Leila,DKX, Attachment means and use of such means for attaching a sheet-formed abrasive or polishing means to a magnetized support.
  20. Tabata Makoto (Furukawa JPX) Takezawa Hiroshi (Furukawa JPX), Automatic lapping apparatus for piezoelectric materials.
  21. Zuniga Steven ; Chen Hung ; Birang Manoocher, Carrier head for chemical mechanical polishing a substrate.
  22. Hata William Y., Catalytic acceleration and electrical bias control of CMP processing.
  23. Jensen Alan J. ; Thornton Brian S., Chemical mechanical planarization or polishing pad with sections having varied groove patterns.
  24. Kubo Akira,JPX, Chemical mechanical polishing method suitable for highly accurate planarization.
  25. Chen Lai-Juh,TWX, Chemical-mechanical polish (CMP) pad conditioner.
  26. Chen Lai-Juh,TWX, Chemical-mechanical polish (CMP) pad conditioner.
  27. Nakajima Hideharu,JPX, Chemical-mechanical polishing apparatus.
  28. Robinson Karl M. ; Walker Michael A., Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads.
  29. Lee Kevin J., Chemical-mechanical polishing slurry.
  30. Tsai Chia S. (Hsin-chu TWX) Tseng Pin-Nan (Hsin-chu TWX), Chemical/mechanical planarization (CMP) apparatus and polish method.
  31. Tani Kazunori,SGX ; Kawachi Kohichi,JPX, Combination electrolytic polishing and abrasive super-finishing method.
  32. Cruz Jose Luis ; Messier Steven James ; Sturtevant Douglas Keith ; Tiersch Matthew Thomas, Composite polish pad for CMP.
  33. Chen,Liang Yuh; Wang,Yuchun; Wang,Yan; Duboust,Alain; Carl,Daniel A.; Wadensweiler,Ralph; Birang,Manoocher; Butterfield,Paul D.; Mavliev,Rashid; Tsai,Stan D., Conductive polishing article for electrochemical mechanical polishing.
  34. Tolles Robert D. ; Shendon Norm ; Somekh Sasson ; Perlov Ilya ; Gantvarg Eugene ; Lee Harry Q., Continuous processing system for chemical mechanical polishing.
  35. Carpio Ronald A., Copper chemical mechanical polishing slurry utilizing a chromate oxidant.
  36. Homayoun Talieh ; Cyprian Uzoh ; Bulent M. Basol, Device providing electrical contact to the surface of a semiconductor workpiece during metal plating.
  37. William G. Easter ; John A. Maze, III ; Frank Miceli, Electrochemical mechanical planarization apparatus and method.
  38. Datta Madhav (Yorktown Heights NY) O\Toole Terrence R. (Webster NY), Electrochemical metal removal technique for planarization of surfaces.
  39. Inoue ; Kiyoshi, Electrochemical polishing method.
  40. Spindt Christopher J. ; Chakarova Gabriela S. ; Nikolova Maria S. ; Searson Peter C. ; Haven Duane A. ; Knall Nils Johan ; Macaulay John M. ; Barton Roger W., Electrochemical removal of material, particularly excess emitter material in electron-emitting device.
  41. Chen Lai-Juh (Hsin-Chu TWX), Electrochemical simulator for chemical-mechanical polishing (CMP).
  42. Datta Madhav (Yorktown Heights NY) Romankiw Lubomyr T. (Briarcliff Manor NY), Electrochemical tool for uniform metal removal during electropolishing.
  43. Weihs Timothy P. ; Mann Adrian B. ; Searson Peter C., Electrochemical-control of abrasive polishing and machining rates.
  44. Wardle Frank Peter,GB2, Electrode for electrochemical machining, method of electrochemical machining with said electrode, a bearing and a metho.
  45. Uzoh Cyprian E., Electroetch and chemical mechanical polishing equipment.
  46. Datta Madhav (Yorktown Heights NY) Shenoy Ravindra V. (Peekskill NY), Electroetching method and apparatus.
  47. Duboust, Alain; Sun, Lizhong; Liu, Feng Q.; Wang, Yuchun; Wang, Yan; Neo, Siew; Chen, Liang-Yuh, Electrolyte composition and treatment for electrolytic chemical mechanical polishing.
  48. Sun, Lizhong; Liu, Feng Q.; Neo, Siew; Tsai, Stan; Chen, Liang-Yuh, Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP.
  49. Wang, Hui; Yih, Peihaur, Electropolishing metal layers on wafers having trenches or vias with dummy structures.
  50. Edelstein Daniel C. ; Horkans Wilma J. ; Luce Stephen E. ; Lustig Naftali E. ; Pope Keith R. ; Roper Peter D., Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing.
  51. Birang Manoocher, Endpoint detector for a chemical mechanical polishing system.
  52. Ichinose Hirofumi,JPX ; Sawayama Ippei,JPX ; Hasebe Akio,JPX ; Murakami Tsutomu,JPX ; Hisamatsu Masaya,JPX ; Shinkura Satoshi,JPX ; Ueno Yukie,JPX, Etching apparatus.
  53. Boehm, Robert G.; Boyd, John M., Field controlled polishing apparatus.
  54. Robert G. Boehm DE; John M. Boyd, Field controlled polishing apparatus and method.
  55. Shuzo Sato JP; Takuo Ihira JP, Flattening polishing device and flattening polishing method.
  56. Shendon Norman ; Sherwood Michael ; Lee Harry, Fluid-pressure regulated wafer polishing head.
  57. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  58. Liu,Feng Q.; Chen,Liang Yuh; Tsai,Stan D.; Hu,Yongqi, Full sequence metal and barrier layer electrochemical mechanical processing.
  59. David F. Bocian ; Werner G. Kuhr ; Jonathan S. Lindsey, High density non-volatile memory device.
  60. Ho Kwok-Lun (P.O. Box 33427 St. Paul MN 55133-3427) Harmer Walter L. (P.O. Box 33427 St. Paul MN 55133-3427), High performance abrasive articles containing abrasive grains and nonabrasive composite grains.
  61. Wakahara Shirou,JPX, Image forming apparatus.
  62. Akutsu Eiichi,JPX ; Ohtsu Shigemi,JPX ; Pu Lyong Sun,JPX, Image recording method for recording a high quality image with an aqueous dye solution and accompanying apparatus.
  63. Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT), In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection.
  64. Ted B Ziemkowski ; Heather N Bean ; Mark J Bianchi, In-device charging system and method for multi-chemistry battery systems.
  65. Cheung Robin ; Carl Daniel A. ; Dordi Yezdi ; Hey Peter ; Morad Ratson ; Chen Liang-Yuh ; Smith Paul F. ; Sinha Ashok K., In-situ electroless copper seed layer enhancement in an electroplating system.
  66. Thomas Rohr DE; Thomas Bohm DE; Heinz Honigschmid DE; Georg Braun DE, Integrated memory having a differential sense amplifier.
  67. Pant Anil K. ; Jairath Rahul ; Mishra Kamal ; Chadda Saket ; Krusell Wilbur C., Integrated pad and belt for chemical mechanical polishing.
  68. John Boyd ; Katgenahalli Y. Ramanujam ; Sridharan Srivatsan ; Xuyen Pham, Interlocking chemical mechanical polishing system.
  69. Adefris Negus B. ; Erickson Carl P., Metal bond abrasive article comprising porous ceramic abrasive composites and method of using same to abrade a workpiece.
  70. Paul Lindquist ; Bulent Basol ; Cyprian Uzoh ; Homayoun Talieh, Method and apparatus employing pad designs and structures with improved fluid distribution.
  71. Ben Mooring ; Wilbur Krusell ; Glenn Travis ; Erik Engdahl, Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed.
  72. Paton Eric N., Method and apparatus for chemical polishing using field responsive materials.
  73. Travis Glenn ; Pena Christopher, Method and apparatus for chemically-mechanically polishing semiconductor wafers.
  74. Gitis Norm ; Vinogradov Michael, Method and apparatus for controlled polishing.
  75. Cyprian Emeka Uzoh ; Homayoun Talieh, Method and apparatus for depositing and controlling the texture of a thin film.
  76. Dow Daniel B., Method and apparatus for electrically endpointing a chemical-mechanical planarization process.
  77. Dow Daniel B., Method and apparatus for electrically endpointing a chemical-mechanical planarization process.
  78. Talieh Homayoun, Method and apparatus for electro-chemical mechanical deposition.
  79. Homayoun Talieh, Method and apparatus for electrochemical mechanical deposition.
  80. Lizhong Sun ; Stan D. Tsai ; Fred C. Redeker, Method and apparatus for electrochemical-mechanical planarization.
  81. Sun, Lizhong; Tsai, Stan D.; Redeker, Fred C., Method and apparatus for electrochemical-mechanical planarization.
  82. Hoshino Shigeo (1244-7 ; Mukogaoka Miyamai-Ku ; Kawasaki-shi ; Kanagawa-ken 213 JPX), Method and apparatus for electroplating objects.
  83. Duboust, Alain; Chang, Shou-Sung; Chen, Liang-Yuh; Wang, Yan; Neo, Siew; Sun, Lizhong; Liu, Feng Q., Method and apparatus for face-up substrate polishing.
  84. Lustig Naftali Eliahu ; Guthrie William L. ; Sandwick Thomas E., Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing.
  85. Adams, John A.; Bibby, Jr., Thomas F. A., Method and apparatus for in-situ endpoint detection using electrical sensors.
  86. Sabde Gundu M. ; Meikle Scott, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
  87. Talieh Homayoun ; Uzoh Cyprian Emeka, Method and apparatus for plating and polishing a semiconductor substrate.
  88. Walker Michael A., Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies.
  89. Mayer Steven T. (Piedmont CA) Contolini Robert J. (Pleasanton CA) Bernhardt Anthony F. (Berkeley CA), Method and apparatus for spatially uniform electropolishing and electrolytic etching.
  90. Emesh, Ismail; Gopalan, Periya; Rayer, II, Phillip M.; Palmer, Bentley J., Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface.
  91. Nagahara Ronald J. ; Lee Dawn M., Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechani.
  92. Tjaden Kevin ; Urbina G. Hugo, Method and system to increase delivery of slurry to the surface of large substrates during polishing operations.
  93. Hsu, Wei-Yung; Chen, Liang-Yuh; Morad, Ratson; Carl, Daniel A., Method for dishing reduction and feature passivation in polishing processes.
  94. Hui Wang, Method for electropolishing metal on semiconductor devices.
  95. Homayoun Talieh ; Bulent Basol, Method for forming an electrical contact with a semiconductor substrate.
  96. Hempel Eugene O. (Garland TX), Method for performing chemical mechanical polish (CMP) of a wafer.
  97. Zubatova Lidia S. (Ljublinskaya ; 111 ; kv. 120 Moscow SUX) Grodzinsky Eduard Y. (ulitsa Maril Ulyanovoi ; 11 ; kv. 117 Moscow SUX) Shelyagin Ivan V. (Volgo-gradsky prospekt ; 147/5 ; Korpus 1 ; kv. , Method of abrasive electroerosion grinding.
  98. Jalal Ashjaee ; Boguslaw A. Nagorski ; Bulent M. Basol ; Homayoun Talieh ; Cyprian Uzoh, Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing.
  99. Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing.
  100. Uzoh Cyprian Emeka ; Harper James McKell Edwin, Method of electrochemical mechanical planarization.
  101. Wardle Frank Peter,GBX ; Girardin Herve,FRX, Method of electrochemically machining a bearing ring.
  102. Liu Yauh-Ching ; Perng Dung-Ching, Method of single step damascene process for deposition and global planarization.
  103. Liu Yauh-Ching ; Perng Dung-Ching, Method of single step damascene process for deposition and global planarization.
  104. Hui Wang, Methods and apparatus for electropolishing metal interconnections on semiconductor devices.
  105. Hui Wang, Methods and apparatus for end-point detection.
  106. Wang Hui, Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces.
  107. Wang, Hui; Gutman, Felix; Nuch, Voha, Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces.
  108. Cesna Joseph V., Methods and apparatus for improved polishing of workpieces.
  109. Cook Lee Melbourne ; James David B. ; Jenkins Charles William ; Reinhardt Heinz F. ; Roberts John V. H. ; Pillai Raj Raghav, Methods for using polishing pads.
  110. Kirchner Eric J. ; Kalpathy-Cramer Jayashree, Modifying contact areas of a polishing pad to promote uniform removal rates.
  111. Roberts John V. H. ; Cook Lee Melbourne ; James David B. ; Reinhardt Heinz F., Mosaic polishing pads and methods relating thereto.
  112. Ackley Donald E. ; LeClair Timothy L. ; Swanson Paul D., Multicomponent devices for molecular biological analysis and diagnostics.
  113. Shyng-Tsong Chen ; Alex Siu Keung Chung ; Oscar Kai Chi Hsu ; Kenneth P. Rodbell ; Jean Vangsness, Multilayered polishing pad, method for fabricating, and use thereof.
  114. Cyprian Uzoh ; Bulent Basol ; Homayoun Talieh, Pad designs and structures for a versatile materials processing apparatus.
  115. Chen, Liang-Yuh; Hsu, Wei-Yung; Duboust, Alain; Morad, Ratson; Carl, Daniel A., Planarization of substrates using electrochemical mechanical polishing.
  116. Brian Thornton, Planarization system for chemical-mechanical polishing.
  117. Hui Wang, Plating apparatus and method.
  118. Kim Young-Soo,KRX, Polishing apparatus for a semiconductor wafer.
  119. Masuko Takayuki (Tokyo JPX) Suzuki Norio (Yokohama JPX) Moriya Kaoru (Yokohama JPX), Polishing machine for ferrule of optical fiber connector.
  120. Robinson Karl M., Polishing pad and a method for making a polishing pad with covalently bonded particles.
  121. Cook, Lee Melbourne; James, David B.; Roberts, John V. H., Polishing pad for electrochemical mechanical polishing.
  122. Takiyama Masahiro (Shiojiri JPX) Miyazaki Kunihiro (Shiojiri JPX) Shiozawa Kenichiro (Ashiya JPX), Polishing pad for semiconductor wafers.
  123. Bennett Doyle E. ; Redeker Fred C. ; Osterheld Thomas H. ; Addiego Ginnetto, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
  124. Osterheld Tom ; Ko Sen-hou, Polishing pad having a grooved pattern for use in a chemical mechanical polishing system.
  125. Nakajima Hideharu,JPX, Polishing pad, polishing apparatus and polishing method.
  126. Reinhardt Heinz F. (Chadds Ford PA) Roberts John V. H. (Newark DE) McClain Harry G. (Middletown DE) Budinger William D. (Newark DE) Jensen Elmer W. (New Castle DE), Polymeric polishing pad containing hollow polymeric microelements.
  127. Berman Michael J., Pre-conditioning polishing pads for chemical-mechanical polishing.
  128. Manens, Antoine P.; Chen, Liang-Yuh, Process control in electrochemically assisted planarization.
  129. Manens,Antoine P.; Chen,Liang Yuh, Process control in electrochemically assisted planarization.
  130. Perlov Ilya ; Gantvarg Eugene ; Lee Harry Q. ; Somekh Sasson ; Tolles Robert D., Radially oscillating carousel processing system for chemical mechanical polishing.
  131. Doan, Trung Tri; Meikle, Scott G., Semiconductor processing methods of removing conductive material.
  132. Uzoh Cyprian E. ; Edelstein Daniel C., Serial intelligent electro-chemical-mechanical wafer processor.
  133. Oliver Michael R., Slurry injection and recovery method and apparatus for chemical-mechanical polishing process.
  134. Hsieh Shih-Huang,TWX ; Chen Li-Dum,TWX, Slurry supply system for chemical mechanical polishing.
  135. Scholander Elisabeth,SEX ; Werynski Andrzej,PLX ; Jozwiak Andrzej,PLX ; Larm Olle,SEX, Surface modified biocompatible membranes.
  136. Leach Michael A. (Bristol VT) Paulsen James K. (Jericho VT) Machesney Brian J. (Burlington VT) Venditti Daniel J. (Essex Junction VT) Whitaker Christopher R. (Jericho VT), System for mechanical planarization.
  137. Meikle Scott ; Schultz Laurence D., Under-pad for chemical-mechanical planarization of semiconductor wafers.
  138. Cangshan Xu ; Brian S. Lombardo, Unsupported chemical mechanical polishing belt.
  139. Tobin Jim, Wafer transfer station for a chemical mechanical polisher.
  140. Doran, Kevin, Wallpaper removing steamers.
  141. Carlson David W., Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates.
  142. Hardy L. Charles ; Trice Jennifer L., Working liquids and methods for modifying structured wafers suited for semiconductor fabrication.
  143. Uzoh, Cyprian Emeka; Talieh, Homayoun; Basol, Bulent; Young, Douglas W., Workpeice proximity plating apparatus.

이 특허를 인용한 특허 (2)

  1. Ikenaga, Kazuyuki; Tetsuka, Tsutomu; Furuse, Muneo, Cleaning apparatus.
  2. Wang, Yan; Manens, Antoine P.; Neo, Siew S.; Duboust, Alain; Chen, Liang-Yuh, Endpoint for electroprocessing.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로