Process control in electrochemically assisted planarization
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B23H-003/00
B24D-011/02
C23H-003/00
C25D-017/00
출원번호
US-0425339
(2006-06-20)
등록번호
US-7294038
(2007-11-13)
발명자
/ 주소
Manens,Antoine P.
Chen,Liang Yuh
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson & Sheridan
인용정보
피인용 횟수 :
2인용 특허 :
143
초록▼
In one embodiment, a pad assembly for electro-processing a substrate is provided which includes a first conductive layer having a working surface adapted to contact the substrate during a polishing process, an intermediate layer coupled to the first conductive layer, and a second conductive layer co
In one embodiment, a pad assembly for electro-processing a substrate is provided which includes a first conductive layer having a working surface adapted to contact the substrate during a polishing process, an intermediate layer coupled to the first conductive layer, and a second conductive layer coupled to the intermediate layer. The second conductive layer may have a plurality of independently electrically biasable zones and is configured to be coupled with a power delivery arrangement. The intermediate layer may contain a polymer material support disk, a backing layer, or combinations thereof. Generally, the first conductive layer, the second conductive layer, and the intermediate layer are adhered or secured together and removable as a unitary replaceable body. In one example, the intermediate layer may contain a plurality of perforations or cannels that have a diameter within a range from about 0.5 mm to about 10 mm.
대표청구항▼
What is claimed is: 1. A pad assembly for electro-processing a substrate, comprising: a first conductive layer having a working surface to contact the substrate during a polishing process; an intermediate layer coupled to the first conductive layer; and a second conductive layer coupled to the inte
What is claimed is: 1. A pad assembly for electro-processing a substrate, comprising: a first conductive layer having a working surface to contact the substrate during a polishing process; an intermediate layer coupled to the first conductive layer; and a second conductive layer coupled to the intermediate layer, wherein the second conductive layer has a plurality of independently electrically biasable zones and is configured to be coupled with a power delivery arrangement. 2. The pad assembly of claim 1, wherein the intermediate layer comprises a polymer material support disk, a backing layer, or combinations thereof. 3. The pad assembly of claim 2, wherein the first conductive layer, the second conductive layer, and the intermediate layer are adhered or secured together and removable as a unitary replaceable body. 4. The pad assembly of claim 2, wherein the intermediate layer comprises a plurality of perforations, channels, apertures, or holes. 5. The pad assembly of claim 4, wherein the perforations or the channels have a diameter within a range from about 0.5 mm to about 10 mm. 6. The pad assembly of claim 1, wherein the first conductive layer comprises a dielectric body and at least one conductive element. 7. The pad assembly of claim 4, wherein the dielectric body comprises a polymeric material. 8. The pad assembly of claim 7, wherein the polymeric material is selected from the group consisting of polyurethane, polycarbonate, polyphenylene sulfide, polyethylene, derivates thereof, and combinations thereof. 9. The pad assembly of claim 7, wherein the dielectric body comprises a fluoropolymeric material. 10. The pad assembly of claim 1, wherein the working surface further comprises at least one of grooves, embossment, or other texturing formed therein. 11. The pad assembly of claim 1, wherein the first conductive layer is at least one of permeable to electrolyte or contains perforations. 12. The pad assembly of claim 1, wherein the first conductive layer further comprises a plurality of conductive elements adapted to deliver a current to the working surface. 13. The pad assembly of claim 12, wherein the first conductive layer comprises a dielectric body and a plurality of conductive elements configured to be coupled with the power delivery arrangement. 14. The pad assembly of claim 1, further comprising at least one contact element extending through the pad assembly and adapted to deliver a current to the working surface. 15. The pad assembly of claim 1, wherein the second conductive layer further comprises a plurality of concentric conductive elements. 16. The pad assembly of claim 1, wherein the second conductive layer further comprises conductive elements comprising a material selected from the group consisting of copper, graphite, titanium, platinum, gold, alloys thereof, and combinations thereof. 17. A pad assembly for electro-processing a substrate, comprising: a first conductive layer having a working surface to contact the substrate; a second conductive layer having a plurality of independently electrically biasable zones and is configured to be coupled with a power delivery arrangement; and an intermediate layer between and coupled with the first conductive layer and the second conductive layer, wherein the intermediate layer comprises a polymer material support disk, a backing layer, or combinations thereof. 18. The pad assembly of claim 17, wherein the first conductive layer, the second conductive layer, and the intermediate layer are adhered or secured together and removable as a unitary replaceable body. 19. The pad assembly of claim 17, wherein the intermediate layer comprises a plurality of perforations, channels, apertures, or holes, wherein the perforations or the channels have a diameter within a range from about 0.5 mm to about 10 mm. 20. The pad assembly of claim 17, wherein the first conductive layer comprises a dielectric body and at least one conductive, wherein the dielectric body comprises a polymeric material selected from the group consisting of polyurethane, polycarbonate, polyphenylene sulfide, polyethylene, fluoropolymeric material, derivates thereof, and combinations thereof. 21. The pad assembly of claim 17, wherein the first conductive layer is at least one of permeable to electrolyte or contains perforations. 22. The pad assembly of claim 17, wherein the first conductive layer further comprises a plurality of conductive elements adapted to deliver a current to the working surface. 23. The pad assembly of claim 22, wherein the first conductive layer comprises a dielectric body and a plurality of conductive elements configured to be coupled with the power delivery arrangement. 24. The pad assembly of claim 17, further comprising at least one contact element extending through the pad assembly and adapted to deliver a current to the working surface. 25. The pad assembly of claim 17, wherein the second conductive layer further comprises a plurality of concentric conductive elements. 26. The pad assembly of claim 17, wherein the second conductive layer further comprises conductive elements comprising a material selected from the group consisting of copper, graphite, titanium, platinum, gold, alloys thereof, and combinations thereof. 27. A pad assembly for electro-processing a substrate, comprising: a first conductive layer having a working surface to contact the substrate by a plurality of conductive elements; a second conductive layer having a plurality of independently electrically biasable zones and is configured to be coupled with a power delivery arrangement; and an intermediate layer between and coupled with the first conductive layer and the second conductive layer, wherein the intermediate layer further comprises a plurality of perforations, channels, apertures, or holes.
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이 특허에 인용된 특허 (143)
Krech John E. (Eagan MN), Abrasive articles and methods for their manufacture.
Ryoke Katsumi (Kanagawa JPX) Fujiyama Masaaki (Kanagawa JPX) Yamada Keisuke (Kanagawa JPX), Abrasive tape having an interlayer for magnetic head cleaning and polishing.
Birang Manoocher ; Rosenberg Lawrence M. ; Somekh Sasson ; White John M, Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet.
Satou Yuuichi,JPX, Apparatus for accurately measuring local thickness of insulating layer on semiconductor wafer during polishing and polishing system using the same.
Cote William J. (Poughquag NY) Ryan James G. (Newtown CT) Okumura Katsuya (Poughkeepsie NY) Yano Hiroyuki (Wappingers Falls NY), Apparatus for processing semiconductor wafers.
Damgaard Morten J.,DKX ; Bjerregaard Leila,DKX, Attachment means and use of such means for attaching a sheet-formed abrasive or polishing means to a magnetized support.
Tolles Robert D. ; Shendon Norm ; Somekh Sasson ; Perlov Ilya ; Gantvarg Eugene ; Lee Harry Q., Continuous processing system for chemical mechanical polishing.
Homayoun Talieh ; Cyprian Uzoh ; Bulent M. Basol, Device providing electrical contact to the surface of a semiconductor workpiece during metal plating.
Spindt Christopher J. ; Chakarova Gabriela S. ; Nikolova Maria S. ; Searson Peter C. ; Haven Duane A. ; Knall Nils Johan ; Macaulay John M. ; Barton Roger W., Electrochemical removal of material, particularly excess emitter material in electron-emitting device.
Edelstein Daniel C. ; Horkans Wilma J. ; Luce Stephen E. ; Lustig Naftali E. ; Pope Keith R. ; Roper Peter D., Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing.
Ho Kwok-Lun (P.O. Box 33427 St. Paul MN 55133-3427) Harmer Walter L. (P.O. Box 33427 St. Paul MN 55133-3427), High performance abrasive articles containing abrasive grains and nonabrasive composite grains.
Akutsu Eiichi,JPX ; Ohtsu Shigemi,JPX ; Pu Lyong Sun,JPX, Image recording method for recording a high quality image with an aqueous dye solution and accompanying apparatus.
Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT), In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection.
Cheung Robin ; Carl Daniel A. ; Dordi Yezdi ; Hey Peter ; Morad Ratson ; Chen Liang-Yuh ; Smith Paul F. ; Sinha Ashok K., In-situ electroless copper seed layer enhancement in an electroplating system.
Adefris Negus B. ; Erickson Carl P., Metal bond abrasive article comprising porous ceramic abrasive composites and method of using same to abrade a workpiece.
Paul Lindquist ; Bulent Basol ; Cyprian Uzoh ; Homayoun Talieh, Method and apparatus employing pad designs and structures with improved fluid distribution.
Ben Mooring ; Wilbur Krusell ; Glenn Travis ; Erik Engdahl, Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed.
Lustig Naftali Eliahu ; Guthrie William L. ; Sandwick Thomas E., Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing.
Sabde Gundu M. ; Meikle Scott, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
Walker Michael A., Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies.
Mayer Steven T. (Piedmont CA) Contolini Robert J. (Pleasanton CA) Bernhardt Anthony F. (Berkeley CA), Method and apparatus for spatially uniform electropolishing and electrolytic etching.
Emesh, Ismail; Gopalan, Periya; Rayer, II, Phillip M.; Palmer, Bentley J., Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface.
Nagahara Ronald J. ; Lee Dawn M., Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechani.
Jalal Ashjaee ; Boguslaw A. Nagorski ; Bulent M. Basol ; Homayoun Talieh ; Cyprian Uzoh, Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing.
Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing.
Wang, Hui; Gutman, Felix; Nuch, Voha, Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces.
Cook Lee Melbourne ; James David B. ; Jenkins Charles William ; Reinhardt Heinz F. ; Roberts John V. H. ; Pillai Raj Raghav, Methods for using polishing pads.
Shyng-Tsong Chen ; Alex Siu Keung Chung ; Oscar Kai Chi Hsu ; Kenneth P. Rodbell ; Jean Vangsness, Multilayered polishing pad, method for fabricating, and use thereof.
Chen, Liang-Yuh; Hsu, Wei-Yung; Duboust, Alain; Morad, Ratson; Carl, Daniel A., Planarization of substrates using electrochemical mechanical polishing.
Bennett Doyle E. ; Redeker Fred C. ; Osterheld Thomas H. ; Addiego Ginnetto, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
Reinhardt Heinz F. (Chadds Ford PA) Roberts John V. H. (Newark DE) McClain Harry G. (Middletown DE) Budinger William D. (Newark DE) Jensen Elmer W. (New Castle DE), Polymeric polishing pad containing hollow polymeric microelements.
Perlov Ilya ; Gantvarg Eugene ; Lee Harry Q. ; Somekh Sasson ; Tolles Robert D., Radially oscillating carousel processing system for chemical mechanical polishing.
Leach Michael A. (Bristol VT) Paulsen James K. (Jericho VT) Machesney Brian J. (Burlington VT) Venditti Daniel J. (Essex Junction VT) Whitaker Christopher R. (Jericho VT), System for mechanical planarization.
Carlson David W., Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates.
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