초록 ▼

A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a pr

A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting the bond pads to the Ni/Au pad metallization.

대표청구항 ▼

What is claimed is: 1. A method for forming a semiconductor structure comprising: providing a structure having at least one wire bond pad in contact with a metal line of an interconnect structure, said at least one wire bond pad having an exposed surface portion that is not protected by a passivati

What is claimed is: 1. A method for forming a semiconductor structure comprising: providing a structure having at least one wire bond pad in contact with a metal line of an interconnect structure, said at least one wire bond pad having an exposed surface portion that is not protected by a passivation stack; forming a metallic cap on at least the exposed upper surface portion of the wire bond pad, said metallic cap comprises a TiN seed layer with an Al layer atop and is resistant to alkaline attack; performing a clean/pretreatment step on said Al layer; and forming Ni/Au metallization on said metallic cap, wherein said Ni/Au metallization comprises a Ni layer overlaid by an Au layer, wherein said Ni layer is formed by electroless deposition of Ni, and said Au layer is formed by immersion deposition of Au wherein said Ni/Au metallization and said metallic cap do not extend onto an upper surface of said passivation stack followed by electroless deposition of Au. 2. The method of claim 1 wherein th& metallic cap is formed on the exposed surface portion of the wire bond pad through an opening formed in an said passivation stack. 3. The method of claim 1 wherein the metallic cap is formed atop an entire surface of a metal layer and then the metallic cap and metal layer are selectively etched to form the metallic cap on at least the exposed upper surface portion of the wire bond pad. 4. The method of claim 1 wherein said structure further includes a barrier and a lower passivation layer of said passivation stack located atop the interconnect structure. 5. The method of claim 1 wherein the wire bond pad is comprised of Al or an aluminum alloy. 6. The method of claim 1 wherein the TiN seed layer of the metallic cap has a thickness of about 500 Å or less, and wherein the Al layer of the metallic cap has a thickness less than about 10000 Å. 7. The method of claim 1 further comprising bonding a wire to said Ni/Au metallization. 8. The method of claim 1 wherein said clean/pretreatment step removes surfaces of said Al layer and protects said surfaces against future oxidation. 9. The method of claim 1 wherein said clean/pretreatment step comprises: performing an acid etch and micro-etching a surface of said Al layer for improved adhesion; treating said surface of said Al layer with a first solution of zincate containing ZnO and NaOH as major components; immersing said surface of said Al layer in dilute HNO3; and treating said surface of said Al layer with a second solution of zincate containing ZnO and NaOH as major components. 10. The method of claim 9 further comprising rinsing said surface of said Al layer with water after performing said acid etch and prior to said treating said surface with said first solution. 11. The method of claim 10 further comprising forming a thin continuous and uniform film of Zn on said surface of said Al layer, wherein a thickness of said film of Zn is on the order of about 100 nm. 12. A method for forming a semiconductor structure comprising: providing a structure having at least one wire bond pad in contact with a metal line of an interconnect structure, said at least one wire bond pad having an exposed surface portion that is not protected by a passivation stack; forming a metallic cap on at least the exposed upper surface portion of the wire bond pad, said metallic cap comprises a TiN seed layer with a Ti layer atop and is resistant to alkaline attack; performing a clean/pretreatment step on said Ti layer; and forming Ni/Au metallization on said metallic cap, wherein said Ni/Au metallization comprises a Ni layer overlaid by an Au layer, said Ni layer is formed by electroless deposition of Ni, and said Au layer is formed by immersion deposition of Au followed by electroless deposition of Au wherein said Ni/Au metallization and said metallic cap do not extend onto an upper surface of said passivation stack. 13. The method of claim 12 wherein the metallic cap is formed on the exposed surface portion of the wire bond pad through an opening formed in an overlaying passivation stack. 14. The method of claim 12 wherein the metallic cap is formed atop an entire surface of a metal layer and then the metallic cap and metal layer are selectively etched to form the metallic cap on at least the exposed upper surface portion of the wire bond pad. 15. The method of claim 12 wherein said structure further includes a barrier and a lower passivation layer formed atop the interconnect structure. 16. The method of claim 12 wherein the wire bond pad is comprised of Al or an aluminum alloy. 17. The method of claim 12 wherein the TiN seed layer of the metallic cap has a thickness of about 500 Å or less, and wherein the Ti layer of the metallic cap has a thickness less than about 10000 Å. 18. The method of claim 12 further comprising bonding a wire to said Ni/Au metallization. 19. The method of claim 12 wherein a surface of said Ti layer is activated by said clean/pretreatment. 20. The method of claim 12 further comprising: treating a surface of said Ti layer with an alkali type cleaner with a pH in the range from 7-12; treating said surface of said Ti layer with a KCN type cleaner; performing an HCl acid etching on said surface of said Ti layer; and treating said surface of said Ti layer with a fluorine based Pd activator.