초록 ▼

A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based de

A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

대표청구항 ▼

What is claimed is: 1. A gas sensor assembly comprising a micro-hotplate structure including a free-standing gas sensing element responsive to presence of fluoro species by response indicative of presence or increase in concentration of said fluoro species, the sensing element including at least a

What is claimed is: 1. A gas sensor assembly comprising a micro-hotplate structure including a free-standing gas sensing element responsive to presence of fluoro species by response indicative of presence or increase in concentration of said fluoro species, the sensing element including at least a portion that is spatially separated from and structurally unsupported by the micro-hotplate structure. 2. The gas sensing assembly of claim 1, wherein the at least a portion of the gas sensing element comprises a metal selected from the group consisting of Ti, V, Cr, Mn, Nb, Mo, Ru, Pd, Ag, Ir, Ni, Al, Cu, Pt, and alloys and combinations thereof. 3. The gas sensing assembly of claim 1, wherein the at least a portion of the gas sensing element comprises an inorganic sensor film. 4. The gas sensing assembly of claim 1, wherein the at least a portion of the gas sensing element comprises an organic sensor film. 5. The gas sensing assembly of claim 3, wherein the at least a portion of the gas sensing element comprises a metal selected from the group consisting of copper and nickel. 6. A gas sensor assembly comprising a free-standing gas sensing element coupled to connector pins of a microelectronic device package, wherein the free-standing gas sensing element is arranged for contact with a gaseous environment susceptible to the presence or change of concentration of one or more target gas species therein, and the free-standing gas sensing element is formed of a material that in exposure to the target gas species exhibits a response transmissible through said connector pins of the microelectronic device package. 7. The gas sensor assembly of claim 6, wherein the microelectronic device package comprises a chip carrier. 8. The gas sensor assembly of claim 6, wherein the free-standing gas sensing element comprises a wire or foil element. 9. The gas sensor assembly of claim 6, wherein the free-standing gas sensing element comprises a wire supported on an insulative scaffolding member in an extended conformation including a multiplicity of windings. 10. The gas sensor assembly of claim 9, wherein the insulative scaffolding member is formed of Vespel짰 polyimide. 11. The gas sensor assembly of claim 6, as coupled in target gas-sensing relationship to a semiconductor process chamber. 12. The gas sensor assembly of claim 6, wherein the one or more target gas species comprises one or more fluoro species. 13. A method of monitoring a fluid locus for the presence of a target gas species therein, the method comprising: exposing fluid at said fluid locus to the gas sensor assembly of claim 1; monitoring the gas sensor assembly; and responsively generating an output signal when the gas sensor assembly exhibits a response indicative of the presence or change of concentration of the target gas species in said fluid locus. 14. A method comprising using data generated from signals produced by the gas sensor assembly of claim 1 in the manufacture of a semiconductor device. 15. A method of improving the efficiency of a semiconductor manufacturing tool, the method comprising: using the gas sensor assembly of claim 1 to sense at least one target gas species in a gas employed by, produced by, or constituting an ambient environment of the semiconductor manufacturing tool; and adjusting runtime characteristics of the tool based on data generated from signals produced by the gas sensor assembly. 16. A method of monitoring a fluid locus for the presence of a target gas species therein, the method comprising: exposing fluid at said fluid locus to the gas sensor assembly of claim 6; monitoring the gas sensor assembly; and responsively generating an output signal when the gas sensor assembly exhibits a response indicative of the presence or change of concentration of the target gas species in said fluid locus. 17. The method of claim 16, wherein the fluid locus comprises an ambient gas environment of a manufacturing process. 18. The method of claim 16, wherein the fluid locus comprises a fluid stream in a semiconductor processing plant. 19. The method of claim 16, wherein the target gas species comprises a fluoro species selected from the group consisting of NF3, SiF4, C2F6, HF, F2, COF2, ClF3, IF3, and activated species thereof. 20. A method comprising using data generated from signals produced by the gas sensor assembly of claim 6 in the manufacture of a semiconductor device. 21. The method of claim 20, wherein the manufacture of a semiconductor device includes an ion implant process. 22. A method of improving the efficiency of a semiconductor manufacturing tool, the method comprising: using the gas sensor assembly of claim 6 to sense at least one target gas species in a gas employed by, produced by, or constituting an ambient environment of the semiconductor manufacturing tool; and adjusting runtime characteristics of the tool based an data generated from signals produced by the gas sensor assembly. 23. The method of claim 22, wherein the target gas species comprises a fluoro species selected from the group consisting of NF3, SiF4, C2F6, HF, F2, COF2, ClF3, IF3, and activated species thereof.