초록 ▼

Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of t

Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.

대표청구항 ▼

What is claimed is: 1. A method, comprising: forming a optically transparent semiconductor substrate of a first conductivity type; front surface processing said semiconductor substrate to add at least one gate of a second conductivity type; rear surface processing a rear surface of the semiconducto

What is claimed is: 1. A method, comprising: forming a optically transparent semiconductor substrate of a first conductivity type; front surface processing said semiconductor substrate to add at least one gate of a second conductivity type; rear surface processing a rear surface of the semiconductor substrate to convert a region of the rear substrate into a bias electrode portion that is conductive and is homostructural with said semiconductor substrate, wherein after said convert said bias electrode portion, no further high temperature processes at temperatures over 400째 C. are carried out. 2. A method as in claim 1 A method, comprising: forming a optically transparent semiconductor substrate of a first conductivity type; front surface processing said semiconductor substrate to add at least one gate of a second conductivity type; rear surface processing a rear surface of the semiconductor substrate to convert a region of the rear substrate into a bias electrode portion that is conductive and is homostructural with said semiconductor substrate, wherein said after said converting said bias electrode portion, any subsequent processes are carried out at substantially room temperature. 3. A method as in claim 1, wherein said rear surface processing comprises gettering the semiconductor substrate to form said bias electrode portion within said substrate, and removing the gettering layer without a high temperature process at temperatures over 400째 C. 4. A method as in claim 3, wherein said gettering comprises applying a doped polysilicon layer to a rear surface of the substrate, causing dopant atoms from the polysilicon layer to diffuse into back regions of the substrate adjacent to said rear surface, to form a diffused portion within an area adjacent said rear surface. 5. A method as in claim 4, wherein said diffused portion near said rear surface has a carrier concentration of 1020 cm-3. 6. A method, comprising: forming a optically transparent semiconductor substrate of a first conductivity type; front surface processing said semiconductor substrate to add at least one gate of a second conductivity type; rear surface processing a rear surface of the semiconductor substrate to convert a region of the rear substrate into a bias electrode portion that is conductive and is homostructural with said semiconductor substrate, wherein said rear surface processing comprises gettering the semiconductor substrate to form said structural bias electrode portion within said substrate, and removing the gettering layer at substantially room temperature. 7. A method, comprising: forming a optically transparent semiconductor substrate of a first conductivity type; front surface processing said semiconductor substrate to add at least one gate of a second conductivity type; rear surface processing a rear surface of the semiconductor substrate to convert a region of the rear substrate into a bias electrode portion that is conductive and is homostructural with said semiconductor substrate, wherein said rear surface processing comprises gettering the semiconductor substrate to form said structural bias electrode portion within said substrate, and removing the gettering layer, wherein said gettering comprises applying a doped polysilicon layer to a rear surface of the substrate, causing dopant atoms from the polysilicon layer to diffuse into back regions of the substrate adjacent to said rear surface, to form a diffuse portion within an area adjacent said rear surface, wherein said gettering layer is removed at substantially room temperature. 8. A method as in claim 7, wherein said non-high temperature process is one of wet chemical etching, plasma ion assisted etching, or reactive ion assisted etching or a combination thereof. 9. A method, comprising: forming a optically transparent semiconductor substrate of a first conductivity type; front surface processing said semiconductor substrate to add at least one gate of a second conductivity type; rear surface processing a rear surface of the semiconductor substrate to convert a region of the rear substrate into a bias electrode portion that is conductive and is homostructural with said semiconductor substrate, wherein said rear surface processing comprises gettering the semiconductor substrate to form said structural bias electrode portion within said substrate, and removing the gettering layer without a high temperature process greater than 400째 C., wherein said removing further comprises removing at least a portion of said diffused portion. 10. A method as in claim 9, wherein said removing comprises removing a portion leaving a final thickness between 0.25 and 1.0 μm. 11. A method as in claim 9, further comprising, after said removing, adding an anti-reflective coating. 12. A method as in claim 11, wherein said anti-reflective coating is a dielectric coating. 13. A method as in claim 12, wherein said anti-reflective coating is a dielectric coating formed of multiple different dielectric layers.